Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• an interposer including a conductive via, a redistribution layer making an electric connection with the conductive via, and a dielectric layer passivating the conductive via and the redistribution layer;
• a semiconductor die connected to a conductive via facing an upper portion of the interposer;
• an encapsulant encapsulating a surface of the semiconductor die, the surface of the semiconductor die facing the upper portion of the interposer, wherein one or more other surfaces of the semiconductor die are not encapsulated;
• a bump connected to a conductive via facing a lower portion of the interposer;
• and
• a seed layer being provided with the conductive via and the redistribution layer.

A method of manufacturing a semiconductor device, the method comprising:

• forming an interposer on a dummy substrate, the interposer comprising a dielectric layer, a redistribution layer, and one or more conductive vias;
• connecting a semiconductor die with at least one conductive via of the one or more conductive vias, the at least one conductive via facing an upper portion of the interposer;
• encapsulating a surface of the semiconductor die, the surface facing the upper portion of the interposer, wherein one or more other surfaces of the semiconductor die are not encapsulated;
• and
• removing the dummy substrate from the interposer.