# US 9,041,063 B2 · High electron mobility transistors and methods of manufacturing the same

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- Number: US 9,041,063 B2
- Document ID: US9041063B2
- Status: Granted
- Kind: B2
- Application number: 13/064,287
- Filed: 2011-03-16
- Published: 2011-11-10
- Granted: 2015-05-26
- Earliest claimed: 2010-05-04
- Assignees: Samsung Electroncs Co., Ltd.
- Applicants: In-jun Hwang
- Inventors: In-jun Hwang
- Web page: https://patentgrep.com/patent/US9041063B2

## CPC

- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 62/221: {of FETs}
- H10D 64/411: {for FETs}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a source electrode, a gate electrode, a drain electrode, a channel formation layer including at least a 2-dimensional electron gas (2DEG) channel, a channel supplying layer for forming the 2DEG channel in the channel formation layer, a portion of the channel supplying layer including a first oxygen treated region. The channel supplying layer may include a second oxygen treated region that extends from the first oxygen treated region towards the drain electrode, and the depth and concentration of oxygen of the second oxygen treated region may be less than those of the first oxygen treated region.

## Claims

### Claim 1

A high electron mobility transistor (HEMT), comprising:
a channel layer;
a channel supplying layer configured to induce a 2-dimensional electron gas (2DEG) channel in the channel layer;
a source electrode, a gate electrode and a drain electrode on the channel layer and the channel supplying layer; and
an oxygenated region including a part of at least the channel supplying layer, the oxygenated region including an oxidized product of at least a material of the channel supplying layer, the oxygenated region adjacent to the gate electrode,
the oxygenated region including a first oxygenated region and a second oxygenated region,
the first oxygenated region being between the gate electrode and the channel layer, and
the second oxygenated region being between the drain electrode and the gate electrode,
wherein the second oxygenated region is not in contact with the drain electrode.

### Claim 2 (depends on 1)

The HEMT of claim 1, wherein at least one of the first oxygenated region and the second oxygenated region include a part of the channel supplying layer.

### Claim 3

A high electron mobility transistor (HEMT), comprising:
a channel layer;
a channel supplying layer configured to induce a 2-dimensional electron gas (2DEG) channel in the channel layer;
a source electrode, a gate electrode and a drain electrode on the channel layer and the channel supplying layer;
at least one of a channel increasing layer and an insulating layer on the channel supplying layer, the channel increasing layer increasing a concentration of the 2DEG;
an oxygenated region adjacent to the gate electrode,
the oxygenated region including an oxidized product of a material of the channel supplying layer,
the oxygenated region including one of,
an oxidized product of a material of the channel increasing layer, and
an oxidized product of a material of the insulating layer; and
a semiconductor layer of less polarizability than a polarizability of the channel supplying layer, the semiconductor layer between the channel supplying layer and the at least one of the channel increasing layer and the insulating layer,
wherein at least part of the oxygenated region includes a part of both the at least one of the channel increasing layer and the insulating layer and the semiconductor layer.

### Claim 4 (depends on 3)

The HEMT of claim 3, wherein the at least one of the channel increasing layer and the insulating layer includes the oxygenated region, and
the channel increasing layer includes one of a Group IV semiconductor, a compound of the Group IV semiconductor, an n-type semiconductor and a dielectric material.

### Claim 5 (depends on 3)

The HEMT of claim 3, wherein the insulating layer includes one of Al2O3, SiO2 and SiN.

### Claim 6 (depends on 1)

The HEMT of claim 1, wherein
at least one of a length and an oxygen concentration of the second oxygenated region is less than a corresponding one of a length and an oxygen concentration of the first oxygenated region.

### Claim 7 (depends on 3)

The HEMT of claim 3, wherein
the HEMT includes the insulating layer, and
at least part of the oxygenated region is covered by the insulating layer.

### Claim 8 (depends on 1)

The HEMT of claim 1, further comprising:
a first semiconductor layer of less polarizability than a polarizability of the channel supplying layer, the first semiconductor layer between the gate electrode and the channel supplying layer,
wherein at least one of the first oxygenated region and the second oxygenated region includes a part of the first semiconductor layer.

### Claim 9 (depends on 8)

The HEMT of claim 8, further comprising:
a second semiconductor layer of greater polarizability than a polarizability of the channel layer, the channel layer between the second semiconductor layer and the gate.

### Claim 10 (depends on 1)

The HEMT of claim 1, further comprising:
a semiconductor layer of greater polarizability than a polarizability of the channel layer, the channel layer between the semiconductor layer and the gate.

### Claim 11

A high electron mobility transistor (HEMT), comprising:
a channel layer;
a channel supplying layer configured to induce a 2-dimensional electron gas (2DEG) channel in the channel layer;
a source electrode, a gate electrode and a drain electrode on the channel layer and the channel supplying layer;
at least one of a channel increasing layer and an insulating layer on the channel supplying layer, the channel increasing layer increasing a concentration of the 2DEG;
an oxygenated region adjacent to the gate electrode,
the oxygenated region including an oxidized product of a material of the channel supplying layer,
the oxygenated region including one of,
an oxidized product of a material of the channel increasing layer, and
an oxidized product of a material of the insulating layer; and
a semiconductor layer of greater polarizability than a polarizability of the channel layer, the channel layer between the semiconductor layer and the gate electrode.

### Claim 12

A method of manufacturing a high electron mobility transistor (HEMT), the method comprising:
forming a channel layer on a substrate;
forming a channel supplying layer on the channel layer to induce a 2-dimensional electron gas (2DEG) channel in the channel layer;
forming a source electrode and a drain electrode on the channel supplying layer, the source and drain electrodes spaced apart from each other;
forming an oxygenated region on the channel supplying layer between the source electrode and the drain electrode, the forming an oxygenated region including oxidizing a part of the channel supplying layer; and
forming a gate electrode on at least one of the oxygenated region and a region of the channel supplying layer between the oxygenated region and the source electrode,
wherein the forming of the oxygenated region includes forming a first oxygenated region and a second oxygenated region,
the first oxygenated region is between the gate electrode and the channel layer,
the second oxygenated region is between the drain electrode and the gate electrode, and
the second oxygenated region is not in contact with the drain electrode.

### Claim 13 (depends on 12)

The method of claim 12, wherein at least one of lengths and oxygen concentrations of the first and second oxygenated regions are different from each other.

### Claim 14 (depends on 12)

The method of claim 12, wherein the forming of the oxygenated region includes forming the first and second oxygenated regions to partially overlap each other.

### Claim 15 (depends on 12)

The method of claim 12, further comprising:
forming at least one of a channel increasing layer and an insulating layer on the channel supplying layer prior to the forming of the gate electrode.

### Claim 16 (depends on 15)

The method of claim 15, wherein the forming of the at least one of the channel increasing layer and the insulating layer includes forming the channel increasing layer, and
the channel increasing layer includes one of a Group IV semiconductor, a compound of a Group IV semiconductor, an n-type semiconductor and a dielectric material.

### Claim 17 (depends on 15)

The method of claim 15, wherein the forming of the at least one of the channel increasing layer and the insulating layer includes forming the insulating layer, and
the insulating layer includes one of Al2O3, SiO2 and SiN.

### Claim 18 (depends on 12)

The method of claim 12, wherein at least one of the length and oxygen concentration of the second oxygenated region is less than a corresponding one of the length and oxygen concentration of the first oxygenated region, and
the forming of the gate electrode includes forming the gate electrode on the first oxygenated region.

### Claim 19 (depends on 12)

The method of claim 12, further comprising:
forming a first semiconductor layer of less polarizability than a polarizability of the channel supplying layer on the channel supplying layer prior to the forming of the gate electrode,
wherein the forming of the oxygenated region includes forming the oxygenated region through the first semiconductor layer.

### Claim 20 (depends on 19)

The method of claim 19, further comprising:
forming a second semiconductor layer having greater polarizability than polarizability of the channel layer,
wherein the forming of the channel layer includes forming the channel layer on the second semiconductor layer.

### Claim 21 (depends on 15)

The method of claim 15, further comprising:
forming a first semiconductor layer of less polarizability than a polarizability of the channel supplying layer on the channel supplying layer prior to the forming of the at least one of the channel increasing layer and the insulating layer.

### Claim 22 (depends on 21)

The method of claim 21, further comprising:
forming a second semiconductor layer of greater polarizability than a polarizability of the channel layer,
wherein the forming of the channel layer includes forming the channel layer on the second semiconductor layer.

### Claim 23 (depends on 12)

The method of claim 12, wherein the forming of the oxygenated region includes forming the oxygenated region by using one of O2 plasma, O2 annealing, O3, ultraviolet (UV) oxidation, O radical and O implant.

### Claim 24 (depends on 3)

The HEMT of claim 3, wherein a width of oxygenated region is less than a width of the at least one of the channel increasing layer and the insulating layer.