# US 9,041,045 B2 · Transparent LED wafer module and method for manufacturing same

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- Number: US 9,041,045 B2
- Document ID: US9041045B2
- Status: Granted
- Kind: B2
- Application number: 13/583,625
- Filed: 2011-02-25
- Published: 2012-12-27
- Granted: 2015-05-26
- Earliest claimed: 2010-03-09
- Applicants: Sung-Bok Shin
- Inventors: Sung-Bok Shin
- Web page: https://patentgrep.com/patent/US9041045B2

## CPC

- H10H 20/835: {Reflective materials}
- H10H 20/013: {having light-emitting regions comprising only Group III-V materials}
- H10H 20/032: {of electrodes}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, where both surfaces of the conductor LED device are entirely grown on the transparent material, and then a transparent glass substrate is restacked, thereby securing a high amount of light.

## Claims

### Claim 1

A transparent LED wafer module comprising:
a lower transparent substrate having translucency;
a lower transparent electrode coated on the lower transparent substrate, to which power is applied;
an n-electrode formed after a metal is deposited and etched, in which a lower portion of the n-electrode is received in the lower transparent electrode by a predetermined depth;
an epitaxial layer comprising a plurality of layers, which is formed by etching after being deposited on the n-electrode, and emits light by application of power;
a p-electrode formed by etching after a metal is deposited on a p-ohmic contact layer as an uppermost layer from among the plurality of layers constituting the epitaxial layer;
a transparent nonconductor filled between the lower transparent electrode and an upper transparent electrode connected to the n-electrode and the p-electrode, respectively, which blocks positive and negative polarities occurring by power application; wherein the upper transparent electrode is layered on the transparent nonconductor and the p-electrode; and
an upper transparent substrate having translucency, which is layered on the upper transparent electrode,
wherein the epitaxial layer comprises:
an AlGaInN <aluminum-gallium-indium-nitride> buffer formed by etching after being deposited on the lower transparent electrode, which is grown on one side of the n-electrode at the same height as that of an upper portion of the n-electrode;
an n-AlGaInN layer layered on the n-electrode and the AlGaInN buffer;
an AlGaInN active layer layered on the n-AlGaInN layer, which comprises a plurality of quantum wells, and emits light by power application;
a p-AlGaInN clad layer layered on the AlGaInN active layer; and
a p-ohmic contact layer layered on the p-AlGaInN clad layer.

### Claim 2 (depends on 1)

The transparent LED wafer module as claimed in claim 1, wherein when power is applied through the upper transparent electrode and the transparent electrode, heat generated from the AlGaInN active layer is radiated through the upper transparent substrate and the lower transparent substrate.

### Claim 3

A method for manufacturing a transparent LED wafer module, the method comprising the steps of:
(a) coating a lower transparent electrode on a lower transparent substrate having translucency;
(b) forming an n-electrode by depositing and etching a metal on the lower transparent electrode coated in step (a);
(c) forming an epitaxial layer by being deposited and etched on then-electrode, the epitaxial layer comprising a plurality of layers, and emitting light by power application;
(d) forming a p-electrode by depositing and etching a metal on a p-ohmic contact layer formed as an uppermost layer of the epitaxial layer;
(e) filling a transparent nonconductor between the lower transparent electrode and an upper transparent electrode connected to the n-electrode and the p-electrode, respectively, formed in steps (b) and (d) in order to block positive and negative polarities occurring by power application; and
(f) layering the upper transparent electrode on the p-electrode and the transparent nonconductor, and layering an upper transparent substrate on the upper transparent electrode,
wherein the step (c) comprises the steps of:
(c-1) growing an AlGaInN buffer by depositing and etching the AlGaInN buffer at one side of the n-electrode at the same height as that of an exposed upper portion of the n-electrode formed in the step (b);
(c-2) layering an n-AlGaInN layer on the n-electrode and the AlGaInN buffer through a deposition and etching process, and layering an AlGaInN active layer on the n-AlGaInN layer, the AlGaInN active layer comprising a plurality of quantum wells, and emitting light by power application through the lower transparent electrode and the upper transparent electrode formed respectively in the steps (a) and (f); and
(c-3) layering a p-AlGaInN clad layer on the AlGaInN active layer, and layering a p-ohmic contact layer.

### Claim 4 (depends on 3)

The method as claimed in claim 3, wherein when power is applied through the upper transparent electrode and the transparent electrode, heat generated from the AlGaInN active layer is radiated through the upper transparent substrate and the lower transparent substrate.