# US 9,041,038 B2 · Light-emitting diode and method of fabricating the same

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- Number: US 9,041,038 B2
- Document ID: US9041038B2
- Status: Granted
- Kind: B2
- Application number: 14/098,687
- Filed: 2013-12-06
- Published: 2014-06-12
- Granted: 2015-05-26
- Earliest claimed: 2012-12-12
- Assignees: Seoul Viosys Co., Ltd.
- Applicants: Seoul Viosys Co., Ltd.
- Inventors: Jin Woong Lee; Kyoung Wan Kim; Yeo Jin Yoon; Ye Seul Kim; Tae Kyoon Kim
- Web page: https://patentgrep.com/patent/US9041038B2

## CPC

- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/01: Manufacture or treatment
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer}
- H10H 20/833: Transparent materials
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/856: Reflecting means
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/032: {of electrodes}
- H10H 20/034: {of coatings}
- H10H 20/036: {of packages}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/0364: {of interconnections}
- H10H 20/831: characterised by their shape
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.

## Claims

### Claim 1

A Light-Emitting Diode (LED), comprising:
a semiconductor stack structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack structure being disposed on a substrate;
a conductive substrate disposed on the semiconductor stack structure; and
an electrode disposed on and in ohmic contact with the conductive substrate,
wherein the electrode comprises:
grooves penetrating the electrode and a portion of the conductive substrate;
an electrode pad; and
extension pads extended from the electrode pad.

### Claim 2 (depends on 1)

The LED of claim 1, wherein the grooves are formed in the electrode pad and the extension pads.

### Claim 3 (depends on 1)

The LED of claim 1, wherein the grooves are formed in the extension pads.

### Claim 4 (depends on 1)

The LED of claim 1, wherein the grooves comprise a plurality of parallel groove shapes formed in the electrode pad.

### Claim 5 (depends on 1)

The LED of claim 1, wherein the grooves are formed in the electrode pad in a ring form.

### Claim 6 (depends on 1)

The LED of claim 1, wherein the grooves are formed in the electrode pad in a dot form disposed at regular intervals.

### Claim 7 (depends on 1)

The LED of claim 1, wherein the grooves are formed in the extension pad in a discontinuous dotted line form.

### Claim 8 (depends on 1)

The LED of claim 1, wherein the grooves are formed in the extension pads in a plurality of circles.

### Claim 9 (depends on 1)

The LED of claim 1, further comprising a plating layer disposed on the electrode pad and disposed in the grooves.

### Claim 10 (depends on 1)

The LED of claim 1, wherein the conductive substrate comprises a nitride doped with impurities.

### Claim 11 (depends on 1)

The LED of claim 1, wherein each groove of the grooves comprises a cross-section having a V-cut shape.

### Claim 12 (depends on 1)

The LED of claim 1, further comprising a reflection layer disposed between the electrode pad and the conductive substrate.

### Claim 13 (depends on 12)

The LED of claim 12, wherein the reflection layer comprises a plurality of layers having different refractive indices.

### Claim 14 (depends on 12)

The LED of claim 12, wherein the reflection layer is disposed in a ring pattern, a surface of the reflection layer comprises a rough portion, and the electrode pad is connected to the conductive substrate via the reflection layer.

### Claim 15 (depends on 1)

The LED of claim 1, further comprising:
a reflection layer disposed between the electrode pad and the second semiconductor layer, the reflection layer comprising a plurality of layers having different refractive indices; and
a transparent electrode layer disposed on the second semiconductor layer.

### Claim 16 (depends on 15)

The LED of claim 15, wherein the transparent electrode layer is disposed on the reflection layer and disposed between the electrode pad and the second semiconductor layer.

### Claim 17 (depends on 15)

The LED of claim 15, wherein the transparent electrode layer is disposed between the electrode pad and the second semiconductor layer, other than at a portion of the second semiconductor layer on which the reflection layer is disposed.

### Claim 18 (depends on 1)

The LED of claim 1, wherein the electrode pad comprises an N-type electrode pad or a P-type electrode pad.

### Claim 19

A method of fabricating a Light-Emitting Diode (LED), the method comprising:
forming a semiconductor stack structure by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a conductive substrate;
forming an electrode on the semiconductor stack structure;
performing laser scribing on the electrode to form grooves penetrating the electrode to a portion of the conductive substrate; and
forming a plating layer on the electrode and in the grooves,
wherein the electrode comprises:
an electrode pad; and
extension pads extending from the electrode pad.

### Claim 20 (depends on 19)

The method of claim 19, wherein the laser scribing transfers heat for ohmic contact between the electrode and the conductive substrate.

### Claim 21 (depends on 19)

The method of claim 19, wherein the conductive substrate is attached to the electrode pad before forming the grooves.

### Claim 22 (depends on 19)

The method of claim 19, further comprising forming a reflection layer on the conductive substrate, before forming the plating layer on the electrode.

### Claim 23 (depends on 19)

The method of claim 19, wherein the grooves are formed in the electrode pad and the extension pads.

### Claim 24 (depends on 19)

The method of claim 19, wherein the grooves are formed in the extension pads.

### Claim 25 (depends on 19)

The method of claim 19, wherein the grooves comprise a plurality of parallel groove shapes formed in the electrode pad.

### Claim 26 (depends on 19)

The method of claim 19, wherein the grooves are formed in the electrode pad in a ring form.

### Claim 27 (depends on 19)

The method of claim 19, wherein the grooves are formed in the electrode pad in a dot form disposed at regular intervals.

### Claim 28 (depends on 19)

The method of claim 19, wherein the grooves are formed in the extension pad in a discontinuous dotted line form.

### Claim 29 (depends on 19)

The method of claim 19, wherein the grooves are formed in the extension pad in a plurality of circles.

### Claim 30 (depends on 19)

The method of claim 19, wherein the electrode pad comprises an N-type electrode pad or a P-type electrode pad.