# US 9,041,034 B2 · Light emitting diode component comprising polysilazane bonding layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,041,034 B2 - Document ID: US9041034B2 - Status: Granted - Kind: B2 - Application number: 13/876,373 - Filed: 2011-10-25 - Published: 2013-08-29 - Granted: 2015-05-26 - Earliest claimed: 2010-11-18 - Assignees: 3M Innovative Properties Company - Applicants: Guoping Mao; Stephen J. Znameroski; Yu Yang; Terry L. Smith - Inventors: Guoping Mao; Stephen J. Znameroski; Yu Yang; Terry L. Smith - Web page: https://patentgrep.com/patent/US9041034B2 ## CPC - H10H 20/8512: {Wavelength conversion materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/018: {Bonding of wafers} - H10H 20/034: {of coatings} - H10H 20/0361: {of wavelength conversion means} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract In one embodiment, a semiconductor component, such as a wavelength converter wafer, is described wherein the wavelength converter is bonded to an adjacent inorganic component with a cured bonding layer comprising polysilazane polymer. The wavelength converter may be a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles. In another embodiment, the semiconductor component is a pump LED component bonded to an adjacent component with a cured bonding layer comprising polysilazane polymer. The adjacent component may the described wavelength converter(s) or another component comprised of inorganic material(s) such as a lens or a prism. Also described are methods of making semiconductor components such as wavelength converters and LED's. ## Claims ### Claim 1 A semiconductor component comprising a wavelength converter bonded to an adjacent inorganic component with a cured bonding layer comprising a polysilazane polymer. ### Claim 2 (depends on 1) The semiconductor component of claim 1 wherein the wavelength converter is a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles. ### Claim 3 (depends on 1) The semiconductor component of claim 1 wherein the wavelength converter is a multilayer semiconductor wavelength converter comprising II-VI semiconductor material. ### Claim 4 (depends on 1) The semiconductor component of claim 1 wherein the multilayer semiconductor wavelength converter absorbs a portion of blue light to produce longer wavelengths. ### Claim 5 (depends on 1) The semiconductor component of claim 1 wherein the bonding layer further comprises up to 10 wt-% of free-radically polymerizable monomer. ### Claim 6 (depends on 5) The semiconductor component of claim 5 wherein the free-radically polymerizable monomer is a (meth)acrylate monomer. ### Claim 7 (depends on 6) The semiconductor component of claim 6 wherein the (meth)acrylate monomer is a multi-(meth)acrylate monomer comprising at least three (meth)acrylate groups. ### Claim 8 (depends on 1) The semiconductor component of claim 1 wherein the adjacent component is a cover sheet. ### Claim 9 A light emitting diode (LED), comprising: a pump LED component bonded to an adjacent component with a cured bonding layer comprising polysilazane polymer. ### Claim 10 (depends on 9) The light emitting diode (LED) of claim 9 wherein the LED component and adjacent component are comprised of a material which is stable at temperature greater than 150° C. ### Claim 11 (depends on 9) The light emitting diode (LED) of claim 9 wherein the LED component and adjacent component are comprised of one or more inorganic materials. ### Claim 12 (depends on 9) The light emitting diode (LED) of claim 9 wherein the pump LED comprises III-V semiconductor material. ### Claim 13 (depends on 9) The light emitting diode (LED) of claim 9 wherein the adjacent component is a wavelength converter, lens, or prism. ### Claim 14 (depends on 13) The light emitting diode (LED) of claim 13 wherein the wavelength converter is a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles. ### Claim 15 (depends on 9) The light emitting diode (LED) of claim 9 wherein the light emitting diode (LED) further comprise a cover sheet. ### Claim 16 (depends on 13) The light-emitting diode (LED) of claim 13 where the wavelength converter is bonded to the cover sheet with a cured bonding layer comprising a polysilazane polymer. ### Claim 17 An electronic illuminated display comprising: a light-transmissive inorganic component bonded to an adjacent inorganic component with a cured bonding layer comprising a polysilazane polymer. ### Claim 18 (depends on 9, 17) The electronic illuminated display of claim 17 wherein the light-transmissive inorganic component is the light emitting diode (LED) of claim 9. ### Claim 19 A method of making a semiconductor component comprising: bonding a wavelength converter wafer, pump LED component, or combination thereof to an adjacent component with a bonding layer comprising polysilazane polymer. ### Claim 20 (depends on 19) The method of claim 19 wherein a wavelength converter is bonded to an inorganic light-transmissive cover sheet. ### Claim 21 (depends on 1) The semiconductor component of claim 1 wherein the polysilazane comprises a linear, branched, or cyclic backbone comprising at least one Si—N linkage and at least one ethylenically unsaturated group or a SiH group. ### Claim 22 (depends on 9) The light emitting diode (LED) of claim 9 wherein the polysilazane comprises a linear, branched, or cyclic backbone comprising at least one Si—N linkage and at least one ethylenically unsaturated group or a SiH group. ### Claim 23 (depends on 17) The electronic illuminated display of claim 17 wherein the polysilazane comprises a linear, branched, or cyclic backbone comprising at least one Si—N linkage and at least one ethylenically unsaturated group or a SiH group. ### Claim 24 (depends on 19) The method of making a semiconductor component of claim 19 wherein the polysilazane comprises a linear, branched, or cyclic backbone comprising at least one Si—N linkage and at least one ethylenically unsaturated group or a SiH group.