# US 9,041,033 B2 · Semiconductor light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,041,033 B2 - Document ID: US9041033B2 - Status: Granted - Kind: B2 - Application number: 13/781,617 - Filed: 2013-02-28 - Published: 2014-01-02 - Granted: 2015-05-26 - Earliest claimed: 2012-06-28 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Yosuke Akimoto; Yoshiaki Sugizaki; Akihiro Kojima; Miyoko Shimada; Hideyuki Tomizawa; Hideto Furuyama - Web page: https://patentgrep.com/patent/US9041033B2 ## CPC - H10H 20/835: {Reflective materials} - H10H 20/83: Electrodes - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/856: Reflecting means - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface. ## Claims ### Claim 1 A semiconductor light emitting device, comprising: a first semiconductor layer having a first surface and a second surface opposite to the first surface, the second surface having a p-side region and a plurality of n-side regions; a light emitting layer provided on the p-side region; a second semiconductor layer provided on the light emitting layer; a p-side electrode provided on the second semiconductor layer; a plurality of n-side electrodes provided respectively on the plurality of n-side regions; a first insulating film provided on the p-side electrode and on the plurality of n-side electrodes; a p-side interconnect unit provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film; a plurality of second vias provided respectively on the plurality of n-side electrodes and piercing the first insulating film; and an n-side interconnect unit provided on the first insulating film to commonly connect to the plurality of n-side electrodes through the plurality of second vias, wherein a bottom surface of the n-side interconnect unit is coplanar with a top surface of the first insulating film and with a to surface of each of the plurality of second vias, the plurality of n-side regions are separated from each other without being linked at the second surface, and the p-side region is provided around each of the n-side regions at the second surface. ### Claim 2 (depends on 1) The device according to claim 1, wherein the plurality of n-side electrodes are interspersed in a dot configuration on the second surface. ### Claim 3 (depends on 1) The device according to claim 1, wherein the p-side interconnect unit includes: a p-side interconnect layer provided on the first insulating film; and a p-type metal pillar provided on the p-side interconnect layer, the p-type metal pillar being thicker than the p-side interconnect layer, and the n-side interconnect unit includes: an n-side interconnect layer provided on the first insulating film; and an n-side metal pillar provided on the n-side interconnect layer, the n-side metal pillar being thicker than the n-side interconnect layer. ### Claim 4 (depends on 1) The device according to claim 1, further comprising a second insulating film provided between the p-side interconnect unit and the n-side interconnect unit. ### Claim 5 (depends on 4) The device according to claim 4, wherein the second insulating film continuously covers a periphery of the p-side interconnect unit and a periphery of the n-side interconnect unit. ### Claim 6 (depends on 3) The device according to claim 3, wherein the p-side interconnect layer comprises a first single-layer structure provided on the first insulating film, and the n-side interconnect layer comprises a second single-layer structure provided on the first insulating film. ### Claim 7 A semiconductor light emitting device, comprising: a first semiconductor layer having a first surface and a second surface opposite to the first surface, the second surface having a p-side region and a plurality of n-side regions; a light emitting layer provided on the p-side region; a second semiconductor layer provided on the light emitting layer; a p-side electrode provided on the second semiconductor layer, the p-side electrode being reflective to light emitted by the light emitting layer; a plurality of n-side electrodes provided respectively on the plurality of n-side regions; an insulating film provided on the second semiconductor layer and being sandwiched between respective ones of the plurality of n-side electrodes; and an n-side reflecting electrode having a plurality of n-side vias connected respectively to the plurality of n-side electrodes, and a linking portion provided on the insulating film and linking the plurality of n-side vias, wherein a bottom surface of the linking portion is coplanar with a to surface of the insulating film and with a to surface of each of the plurality of n-side vias, a reflectance of the n-side reflecting electrode for the light emitted by the light emitting layer is higher than a reflectance of the n-side electrodes for the light emitted by the light emitting layer, and the n-side reflecting electrode is made of a same material as the p-side electrode. ### Claim 8 (depends on 7) The device according to claim 7, wherein the p-side electrode and the n-side reflecting electrode include silver. ### Claim 9 (depends on 7) The device according to claim 7, further comprising a transparent electrode provided on the second semiconductor layer. ### Claim 10 (depends on 9) The device according to claim 9, wherein the transparent electrode is provided between the p-side electrode and the second semiconductor layer, and is provided between the n-side reflecting electrode and the second semiconductor layer with the insulating film interposed, and the transparent electrode provided between the p-side electrode and the second semiconductor layer is linked to the transparent electrode provided between the n-side reflecting electrode and the second semiconductor layer as a single body. ### Claim 11 (depends on 10) The device according to claim 10, wherein a distance between the light emitting layer and the n-side reflecting electrode is ½ of a light emission wavelength of the light emitting layer. ### Claim 12 (depends on 7) The device according to claim 7, wherein the plurality of n-side electrodes are interspersed in a dot configuration on the second surface. ### Claim 13 A semiconductor light emitting device, comprising: a first semiconductor layer having a first surface and a second surface opposite to the first surface, the second surface having a p-side region and a plurality of n-side regions; a light emitting layer provided on the p-side region; a second semiconductor layer provided on the light emitting layer; a p-side electrode provided on the second semiconductor layer, the p-side electrode being reflective to light emitted by the light emitting layer; a plurality of n-side electrodes provided respectively on the plurality of n-side regions; a first insulating film provided on the p-side electrode and on the plurality of n-side electrodes; a p-side interconnect unit provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film; a plurality of second vias provided respectively on the plurality of n-side electrodes and piercing the first insulating film; and an n-side interconnect unit provided on the first insulating film to commonly connect to the plurality of n-side electrodes through the plurality of second vias, wherein a bottom surface of the n-side interconnect unit is coplanar with a top surface of the first insulating film and with a to surface of each of the plurality of second vias, and the plurality of n-side regions are separated from each other without being linked at the second surface. ### Claim 14 (depends on 13) The device according to claim 13, wherein the p-side interconnect unit includes: a p-side interconnect layer provided on the first insulating film; and a p-type metal pillar provided on the p-side interconnect layer, the p-type metal pillar being thicker than the p-side interconnect layer, and the n-side interconnect unit includes: an n-side interconnect layer provided on the first insulating film; and an n-side metal pillar provided on the n-side interconnect layer, the n-side metal pillar being thicker than the n-side interconnect layer. ### Claim 15 (depends on 13) The device according to claim 13, further comprising a second insulating film provided between the p-side interconnect unit and the n-side interconnect unit. ### Claim 16 (depends on 15) The device according to claim 15, wherein the second insulating film continuously covers a periphery of the p-side interconnect unit and a periphery of the n-side interconnect unit. ### Claim 17 (depends on 13) The device according to claim 13, wherein the plurality of n-side electrodes are interspersed in a dot configuration on the second surface. ### Claim 18 (depends on 13) The device according to claim 13, wherein the p-side electrode includes silver. ### Claim 19 (depends on 13) The device according to claim 13, wherein the p-side region is provided around each of the plurality of n-side electrodes. ### Claim 20 (depends on 13) The device according to claim 13, wherein a distance between the light emitting layer and the p-side electrode is ½ of a light emission wavelength of the light emitting layer.