# US 9,041,032 B2 · Light emitting diode having strain-enhanced well layer

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- Number: US 9,041,032 B2
- Document ID: US9041032B2
- Status: Granted
- Kind: B2
- Application number: 13/484,120
- Filed: 2012-05-30
- Published: 2013-05-30
- Granted: 2015-05-26
- Earliest claimed: 2011-06-02
- Assignees: Seoul Viosys Co., Ltd.
- Applicants: Joo Won Choi; Yoo Dae Han; Jeong Hun Heo
- Inventors: Joo Won Choi; Yoo Dae Han; Jeong Hun Heo
- Web page: https://patentgrep.com/patent/US9041032B2

## CPC

- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- B82Y 99/00: Subject matter not provided for in other groups of this subclass
- Y10S 977/773: Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer.

## Claims

### Claim 1

A light emitting diode, comprising:
an n-contact layer;
a p-contact layer;
an active layer comprising a barrier layer and a well layer, the active layer being arranged between the n-contact layer and the p-contact layer; and
a strain-enhancing layer comprising the barrier layer and InAlGaN-based quantum dots disposed in the barrier layer, the strain-enhancing layer configured to increase a strain applied to the well layer.

### Claim 2 (depends on 1)

The light emitting diode of claim 1, wherein the barrier layer and the well layer each comprise a GaN based compound semiconductor.

### Claim 3 (depends on 2)

The light emitting diode of claim 2, wherein the strain-enhancing layer is arranged between the barrier layer and the well layer or between the n-contact layer and the barrier layer, and
wherein the strain-enhancing layer comprises a GaN based compound semiconductor configured to provide a higher compressive strain to the well layer than a compressive strain to the well layer from the barrier layer alone.

### Claim 4 (depends on 3)

The light emitting diode of claim 3, wherein the barrier layer comprises a GaN layer, the well layer comprises an InGaN layer, and the strain-enhancing layer comprises InAlGaN.

### Claim 5 (depends on 3)

The light emitting diode of claim 3, wherein the strain-enhancing layer comprises a super lattice structure.

### Claim 6 (depends on 2)

The light emitting diode of claim 2, further comprising:
an electron injection layer arranged between the strain-enhancing layer and the active layer,
wherein the strain-enhancing layer is arranged between the n-contact layer and the active layer.

### Claim 7 (depends on 6)

The light emitting diode of claim 6, wherein the strain-enhancing layer comprises AlGaN, and the electron injection layer comprises n-GaN.

### Claim 8 (depends on 1)

The light emitting diode of claim 1, wherein the quantum dots comprise a lattice constant less than that of the barrier layer.

### Claim 9 (depends on 1)

The light emitting diode of claim 1, further comprising a substrate disposed below the n-type contact layer,
wherein the strain-enhancing layer is arranged between the active layer and the substrate, and the strain-enhancing layer comprises a GaN based semiconductor layer comprising a pattern.

### Claim 10 (depends on 9)

The light emitting diode of claim 9, wherein the pattern is integrally formed in the n-contact layer.

### Claim 11

A light emitting diode, comprising:
a first-type contact layer;
a second-type contact layer;
an active layer comprising a barrier layer and a well layer, the active layer being arranged between the first-type contact layer and the second-type contact layer; and
a strain-enhancing layer disposed between the barrier layer and the well layer, and configured to increase a compressive strain applied to the well layer, the strain-enhancing layer comprising a lattice constant lower than a lattice constant of the barrier layer.

### Claim 12 (depends on 11)

The light emitting diode of claim 11, wherein the strain-enhancing layer comprises InAlGaN, the barrier layer comprises GaN, and the well layer comprises InGaN.

### Claim 13 (depends on 11)

The light emitting diode of claim 11, wherein the strain-enhancing layer comprises a super lattice structure.

### Claim 14 (depends on 13)

The light emitting diode of claim 13, wherein the strain-enhancing layer comprises InAlGaN/InAlGaN and the barrier layer comprises GaN.

### Claim 15 (depends on 11)

The light emitting diode of claim 11, wherein the strain-enhancing layer comprises quantum dots.

### Claim 16 (depends on 11)

The light emitting diode of claim 11, wherein the barrier layer comprises quantum dots.

### Claim 17 (depends on 11)

The light emitting diode of claim 11, wherein the strain-enhancing layer comprises a patterned n-GaN layer.

### Claim 18 (depends on 17)

The light emitting diode of claim 17, wherein the patterned n-GaN layer comprises dislocation regions and crystalline regions.

### Claim 19

A light emitting diode, comprising:
a first-type contact layer;
a second-type contact layer;
an active layer comprising a barrier layer and a well layer, the active layer being disposed between the first-type contact layer and the second-type contact layer; and
a strain-enhancing layer disposed in the barrier layer and comprising quantum dots, the strain-enhancing layer configured to increase a compressive strain applied to the well layer and comprising a lattice constant lower than a lattice constant of the barrier layer.