# US 9,041,030 B2 · Light emitting diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,041,030 B2 - Document ID: US9041030B2 - Status: Granted - Kind: B2 - Application number: 13/340,643 - Filed: 2011-12-29 - Published: 2013-04-11 - Granted: 2015-05-26 - Earliest claimed: 2011-10-07 - Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd. - Applicants: Zhen-Dong Zhu; Qun-Qing Li; Shou-Shan Fan - Inventors: Zhen-Dong Zhu; Qun-Qing Li; Shou-Shan Fan - Web page: https://patentgrep.com/patent/US9041030B2 ## CPC - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/831: characterised by their shape - H10H 20/835: {Reflective materials} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light emitting surface. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light emitting surface. The number of the three-dimensional nano-structure are aligned side by side, and a cross-section of thee three-dimensional nano-structure is M-shaped. ## Claims ### Claim 1 A light emitting diode, comprising: a substrate; a first semiconductor layer stacked on the substrate; an active layer stacked on the first semiconductor layer; a second semiconductor layer stacked having a light emitting surface and on the active layer, the light emitting surface being away from the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; and a plurality of three-dimensional nano-structures located on the light emitting surface, wherein each of the plurality of three-dimensional nano-structures comprises a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove. ### Claim 2 (depends on 1) The light emitting diode of claim 1, wherein each of the three-dimensional nano-structures is a bar-shaped protruding structure extending substantially along a straight line, a curvy line, or a polygonal line. ### Claim 3 (depends on 1) The light emitting diode of claim 1, wherein a cross-section of each of the three-dimensional nano-structures is M-shaped. ### Claim 4 (depends on 1) The light emitting diode of claim 1, wherein the first peak comprises a first surface and a second surface intersected with each other, the second peak comprises a third surface and the fourth surface intersected with each other, and the first surface, the second surface, the third surface, and the fourth surface are planar. ### Claim 5 (depends on 4) The light emitting diode of claim 4, wherein a cross-section of the first peak is a trapezoid or a triangle, and a cross-section of the second peak is a trapezoid or a triangle. ### Claim 6 (depends on 1) The light emitting diode of claim 1, wherein the depth of the first groove ranges from about 30 nanometers to about 120 nanometers, and the depth of the second groove ranges from about 100 nanometers to about 200 nanometers. ### Claim 7 (depends on 1) The light emitting diode of claim 1, wherein the plurality of three-dimensional nano-structures is aligned side by side and extends to form a plurality of concentric circles or concentric rectangles. ### Claim 8 (depends on 1) The light emitting diode of claim 1, wherein the plurality of the three-dimensional nano-structures is periodically aligned, and a period of the plurality of the three-dimensional nano-structures ranges from about 100 nanometers to about 500 nanometers. ### Claim 9 (depends on 1) The light emitting diode of claim 1, wherein a distance between the each of two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures ranges from about 0 nanometers to about 200 nanometers. ### Claim 10 (depends on 1) The light emitting diode of claim 1, wherein a width of the three-dimensional nano-structure ranges from about 100 nanometers to about 300 nanometers. ### Claim 11 (depends on 1) The light emitting diode of claim 1, wherein the plurality of three-dimensional nano-structures is integrated with the second semiconductor layer. ### Claim 12 (depends on 1) The light emitting diode of claim 1, wherein the first electrode covers all of the plurality of three-dimensional nano-structures. ### Claim 13 (depends on 1) The light emitting diode of claim 1, further comprising a reflector located on the surface of the substrate away from the first semiconductor layer. ### Claim 14 A light emitting diode, comprising: a first semiconductor layer; a second semiconductor layer having a light emitting surface; an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, the light emitting surface being away from the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; and a plurality of three-dimensional nano-structures located on the light emitting surface, wherein each of plurality of three-dimensional nano-structures comprises a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than that of the second groove. ### Claim 15 (depends on 14) The light emitting diode of claim 14, wherein the first electrode covers an entire surface of the first semiconductor layer away from the active layer. ### Claim 16 (depends on 15) The light emitting diode of claim 15, further comprising a reflector sandwiched between the first electrode and the first semiconductor layer. ### Claim 17 A light emitting diode, comprising: a first semiconductor layer; a second semiconductor layer having a light emitting surface; an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, the light emitting surface being away from the active layer; a first electrode covering an entire surface of the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; and a plurality of three-dimensional nano-structures located on the light emitting surface aligned side by side and extending substantially along the same direction, and a cross-section of each of the thee three-dimensional nano-structures is M-shaped.