# US 9,041,029 B2 · Light emitting diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,041,029 B2 - Document ID: US9041029B2 - Status: Granted - Kind: B2 - Application number: 13/340,627 - Filed: 2011-12-29 - Published: 2013-04-11 - Granted: 2015-05-26 - Earliest claimed: 2011-10-07 - Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd. - Applicants: Zhen-Dong Zhu; Qun-Qing Li; Shou-Shan Fan - Inventors: Zhen-Dong Zhu; Qun-Qing Li; Shou-Shan Fan - Web page: https://patentgrep.com/patent/US9041029B2 ## CPC - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals - H10H 20/01: Manufacture or treatment - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. ## Claims ### Claim 1 A light emitting diode, comprising: a substrate having a first surface and an opposite second surface, the second surface of the substrate being configured as a light emitting surface; a first semiconductor layer stacked on the substrate; an active layer stacked on the first semiconductor layer; and a second semiconductor layer stacked on the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; a plurality of three-dimensional nano-structures located on at least one surface of the substrate, wherein each of the plurality of three-dimensional nano-structures has a first peak and a second peak aligned side by side, a first groove is defined between the first peak and the second peak, a second groove is defined between each two adjacent three-dimensional nano-structures of the plurality of three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove. ### Claim 2 (depends on 1) The light emitting diode of claim 1, wherein the each of the plurality of three-dimensional nano-structures is a bar-shaped protruding structure extending along a straight line, a curve line, or a polygonal line. ### Claim 3 (depends on 1) The light emitting diode of claim 1, wherein a cross-section of the each of the three-dimensional nano-structure is M-shaped. ### Claim 4 (depends on 1) The three-dimensional nano-structure array of claim 1, wherein the first peak comprises a first surface and a second surface intersecting with each other to form a first include angle, the second peak comprises a third surface and the fourth surface intersecting with each other to form a second include angle, and both the first include angle and the second include angle range from about 30 degrees to about 90 degrees. ### Claim 5 (depends on 4) The light emitting diode of claim 4, wherein a cross-section of the first peak has a shape of a trapezoid or a triangle, and a cross-section of the second peak has a shape of a trapezoid or a triangle. ### Claim 6 (depends on 1) The light emitting diode of claim 1, wherein the depth of the first groove ranges from about 30 nanometers to about 120 nanometers, and the depth of the second groove ranges from about 100 nanometers to about 200 nanometers. ### Claim 7 (depends on 1) The light emitting diode of claim 1, wherein the plurality of three-dimensional nano-structures is aligned side by side and extends to form a plurality of concentric circles or concentric rectangles. ### Claim 8 (depends on 1) The light emitting diode of claim 1, wherein the plurality of the three-dimensional nano-structures is periodically aligned, and a period of the plurality of the three-dimensional nano-structures ranges from about 100 nanometers to about 500 nanometers. ### Claim 9 (depends on 1) The light emitting diode of claim 1, wherein a distance between the each two adjacent three-dimensional nano-structures ranges from about 0 nanometers to about 200 nanometers. ### Claim 10 (depends on 1) The light emitting diode of claim 1, wherein a width of the plurality of three-dimensional nano-structures ranges from about 100 nanometers to about 300 nanometers. ### Claim 11 (depends on 1) The light emitting diode of claim 1, wherein the plurality of three-dimensional nano-structures is integrated with the substrate to form an integrated structure. ### Claim 12 (depends on 1) The light emitting diode of claim 1, wherein the plurality of three-dimensional nano-structures is only located on the first surface of the substrate, and the first semiconductor layer covers the plurality of three-dimensional nano-structures. ### Claim 13 (depends on 1) The light emitting diode of claim 1, wherein a surface of the first semiconductor layer away from the substrate comprises a first region and a second region, the second semiconductor layer and the active layer are located on the first region, the second region is exposed from the second semiconductor layer and the active layer, and the first electrode is located on the second region. ### Claim 14 (depends on 1) The light emitting diode of claim 1, further comprising a reflector sandwiched between the second semiconductor layer and the second electrode. ### Claim 15 A light emitting diode, comprising: a substrate having a first surface and a second surface, the second surface is configured as a light emitting surface; a first semiconductor layer stacked on the substrate; an active layer stacked on the first semiconductor layer; and a second semiconductor layer stacked on the first surface of the substrate; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; a plurality of first three-dimensional nano-structures located on the first surface and aligned side by side, and a plurality of second three-dimensional nano-structures located on the second surface of the substrate and aligned side by side, wherein a cross section of each of the plurality of first three-dimensional nano-structure is M-shaped, and a cross section of each of the plurality of second three-dimensional nano-structure is M-shaped. ### Claim 16 (depends on 15) The light emitting diode of claim 15, wherein the plurality of first three-dimensional nano-structures is protruding structures aligned side by side, and the plurality of second three-dimensional nano-structures is protruding structures aligned side by side. ### Claim 17 (depends on 16) The light emitting diode of claim 16, wherein the plurality of first three-dimensional nano-structures extends substantially along a first direction, the plurality of second three-dimensional nano-structures extends substantially along a second direction, and the first direction is substantially perpendicular with the second direction. ### Claim 18 (depends on 16) The light emitting diode of claim 16, wherein the plurality of first three-dimensional nano-structures extends substantially along a first direction, the plurality of second three-dimensional nano-structures extends substantially along a second direction, and the first direction is parallel with the second direction. ### Claim 19 A light emitting diode, comprising: a substrate having a first surface and a second surface, the second surface is configured as a light emitting surface; a first semiconductor layer stacked on the substrate; an active layer stacked on the first semiconductor layer; and a second semiconductor layer stacked on the first surface; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; a plurality of three-dimensional nano-structures located on at least one surface of the substrate, wherein the plurality of three-dimensional nano-structures is aligned side by side, and a cross section of each of the plurality of three-dimensional nano-structures is M-shaped.