# US 9,041,014 B2 · Method for producing an optoelectronic component and component produced in such manner

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- Number: US 9,041,014 B2
- Document ID: US9041014B2
- Status: Granted
- Kind: B2
- Application number: 14/009,921
- Filed: 2012-03-15
- Published: 2014-03-06
- Granted: 2015-05-26
- Earliest claimed: 2011-04-08
- Assignees: OSRAM Opto Semiconductors GmbH
- Applicants: Markus Maute; Jürgen Moosburger; Simon Jerebic
- Inventors: Markus Maute; Jürgen Moosburger; Simon Jerebic
- Web page: https://patentgrep.com/patent/US9041014B2

## CPC

- H10H 20/856: Reflecting means
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/85: Packages
- H10H 20/8506: {Containers}
- H10H 20/8511: {characterised by their material, e.g. binder}
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge.

## Claims

### Claim 1

A method of producing an optoelectronic component comprising:
providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier,
applying a dispersed material comprising a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein
before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the dispersed material separates into the matrix material and the particles as a result of modification at the chip edge.

### Claim 3 (depends on 1)

The method according to claim 1, wherein a separating edge between the dispersed material and the matrix material is formed as a result of modification at the chip edge.

### Claim 4 (depends on 1)

The method according to claim 1, wherein a filter function of the particles is formed as a result of modification at the chip edge.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the particles are deposited at the chip edge as a result of modification.

### Claim 6 (depends on 1)

The method according to claim 1, wherein a chip surface facing away from the carrier is additionally modified.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the matrix material contains silicone and the particles contain TiO2.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the carrier is part of a housing having a cavity into which the semiconductor chip is arranged.

### Claim 9 (depends on 1)

The method according to claim 1, wherein further semiconductor chips are applied on the carrier before the dispersed material is applied, said further semiconductor chips being coated with a protective layer at least in places for a purpose of modification.

### Claim 10 (depends on 9)

The method according to claim 9, wherein the protective layer changes surface energy of the semiconductor chips such that the dispersed material does not adhere to the chip surface.

### Claim 11 (depends on 9)

The method according to claim 9, wherein the protective layer contains polytetrafluoroethylene or consists thereof.

### Claim 12

A method of producing an optoelectronic component comprising:
providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier,
applying a dispersed material comprising a matrix material and particles embedded therein to the carrier at least in regions, wherein
before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is coated with a protective layer at least in places for modification such that the dispersed material at least partly separates into its constituents during application at the chip edge, and
the protective layer changes the surface energy of the semiconductor chips such that the dispersed material does not adhere to a chip surface facing away from the carrier.

### Claim 13 (depends on 12)

The method according to claim 12, wherein the protective layer is a polytetrafluoroethylene layer.