# US 9,041,012 B2 · Galium-nitride light emitting device having a microarray-type structure

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- Number: US 9,041,012 B2
- Document ID: US9041012B2
- Status: Granted
- Kind: B2
- Application number: 13/473,561
- Filed: 2012-05-16
- Published: 2012-11-22
- Granted: 2015-05-26
- Earliest claimed: 2011-05-17
- Assignees: Electronics and Telecommunications Research Institute
- Applicants: Sung Bum Bae
- Inventors: Sung Bum Bae
- Web page: https://patentgrep.com/patent/US9041012B2

## CPC

- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer}
- H10H 20/833: Transparent materials
- H10H 20/032: {of electrodes}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A microarray-type nitride light emitting device includes a light emitting semiconductor layer; and a multilayered transparent contact layer to divide a plane of the light emitting semiconductor layer into a plurality of microarray-type light emitting regions and a plurality of connect-divided light emitting regions. The multilayered transparent contact layer includes a first transparent contact layer that is composed of a material having a resistance value which is heat determinable, and that divides the plane of the light emitting semiconductor layer into the plurality of microarray-type light emitting regions; a transparent resistor layer that is defined within the first transparent contact layer, that is composed of the material having a resistance value which is heat determinable and has a resistance that is higher than that of the first transparent contact layer; and a second transparent contact layer to connect the plurality of microarray-type light emitting regions.

## Claims

### Claim 1

A microarray-type nitride light emitting device, comprising:
a substrate;
a light emitting semiconductor layer comprised of a buffer layer, an n-type nitride contact layer, an active layer, and a p-type nitride contact layer arranged sequentially on the substrate and having a plane though which light is emitted; and
a multilayered transparent contact layer to divide the plane of the light emitting semiconductor layer into a plurality of microarray-type light emitting regions and a plurality of connect-divided light emitting regions, the multilayered transparent contact layer including:
a first transparent contact layer that is comprised of a material having a resistance value which is heat determinable, that has a resistance, and that is patterned so as to divide the plane of the light emitting semiconductor layer into the plurality of microarray-type light emitting regions;
a transparent resistor layer that is defined within the first transparent contact layer, that is comprised of said material having a resistance value which is heat determinable and has a resistance that is higher than that of the first transparent contact layer, and that is effective to limit current flow to respective ones of the plurality of microarray-type light emitting regions so that the plurality of microarray-type light emitting regions are distinguished from each other, respectively; and
a second transparent contact layer to connect the plurality of microarray-type light emitting regions,
wherein the plurality of microarray-type light emitting regions are formed by laminating a pattern forming layer on the first transparent contact layer and by performing heat treatment of the first transparent contact layer.

### Claim 2 (depends on 1)

The microarray-type nitride light emitting device according to claim 1, wherein said material whose resistance value is heat determinable is a transparent conductive oxide that is IZO (indium zinc oxide)-based or ZnO (zinc oxide)-based.

### Claim 3 (depends on 1)

The microarray-type nitride light emitting device of claim 1, wherein the first transparent contact layer has a thickness ranging from 10 to 100 nm.

### Claim 4 (depends on 1)

The microarray-type nitride light emitting device of claim 1, wherein the transparent resistor layer has a resistance of 103Ω/square or more.

### Claim 5 (depends on 4)

The microarray-type nitride light emitting device of claim 4, wherein the transparent resistor layer has a size ranging from 1 to 100 μm.

### Claim 6 (depends on 1)

The microarray-type nitride light emitting device of claim 1, wherein the second transparent contact layer is comprised of a transparent conductive oxide that is ITO (indium tin oxide)-based, IZO (indium zinc oxide)-based, or ZnO-based.

### Claim 7 (depends on 1)

The microarray-type nitride light emitting device of claim 1, wherein the plurality of microarray-type light emitting regions each have a size ranging from 1 to 100 μm.

### Claim 8 (depends on 1)

The microarray-type nitride light emitting device of claim 1, wherein the microarray-type nitride light emitting device is a vertical-type light emitting device, and the plurality of microarray-type light emitting regions are formed on an n-type contact layer or an u-GaN layer.