# US 9,041,000 B2 · Thin film transistor array substrate having non linear active layer and organic light emitting display apparatus including the same

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- Number: US 9,041,000 B2
- Document ID: US9041000B2
- Status: Granted
- Kind: B2
- Application number: 14/096,962
- Filed: 2013-12-04
- Published: 2015-01-22
- Granted: 2015-05-26
- Earliest claimed: 2013-07-19
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Mu-Kyung Jeon
- Web page: https://patentgrep.com/patent/US9041000B2

## CPC

- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)}
- H10D 30/674: {characterised by the active materials}
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A thin film transistor array substrate includes: a driving thin film transistor including an active layer having a bent shape, where the active layer includes: a first active pattern extending substantially in a first direction; and a second active pattern extending substantially in a second direction perpendicular to the first direction and connected to the first active pattern, and a gate electrode disposed on the active layer, where gate electrode overlaps the first active pattern and exposes the second active pattern; and a capacitor including a first electrode defined by the gate electrode of the driving thin film transistor, and a second electrode disposed on the first electrode, where the second electrode overlaps substantially an entire surface of the first electrode.

## Claims

### Claim 1

A thin film transistor array substrate comprising:
a driving thin film transistor comprising:
an active layer having a bent shape, wherein the active layer comprises:
a first active pattern extending substantially in a first direction; and
a second active pattern extending substantially in a second direction perpendicular to the first direction and connected to the first active pattern; and
a gate electrode disposed on the active layer, wherein gate electrode overlaps the first active pattern and exposes the second active pattern; and
a capacitor comprising:
a first electrode defined by the gate electrode of the driving thin film transistor; and
a second electrode disposed on the first electrode, wherein the second electrode overlaps substantially an entire surface of the first electrode.

### Claim 2 (depends on 1)

The thin film transistor array substrate of claim 1, wherein
a hole is defined in a region of the gate electrode corresponding to the second active pattern.

### Claim 3 (depends on 1)

The thin film transistor array substrate of claim 1, wherein an opening is defined in the second electrode of the capacitor.

### Claim 4 (depends on 3)

The thin film transistor array substrate of claim 3, further comprising:
a first insulating film which covers the active layer;
a second insulating film which covers the first electrode of the capacitor; and
an interlayer insulating film which covers the second electrode of the capacitor.

### Claim 5 (depends on 4)

The thin film transistor array substrate of claim 4, further comprising:
a connection wiring disposed on the interlayer insulating film, wherein the connection wire connects the first electrode of the capacitor and a thin film transistor through a contact hole defined through the second insulating film and the interlayer insulating film in a region corresponding to the opening in the second electrode of the capacitor.

### Claim 6 (depends on 5)

The thin film transistor array substrate of claim 5, further comprises:
a compensation thin film transistor which compensates a threshold voltage of the driving thin film transistor; and
an initialization thin film transistor which transmits an initialization voltage to the gate electrode of the driving thin film transistor.

### Claim 7 (depends on 6)

The thin film transistor array substrate of claim 6, wherein
a gate electrode of the compensation thin film transistor and a gate electrode of the initialization thin film transistor are disposed in a same layer as the first electrode of the capacitor.

### Claim 8 (depends on 5)

The thin film transistor array substrate of claim 5, further comprises:
a driving voltage line disposed in a same layer as the connection wiring and connected to the second electrode of the capacitor,
wherein the driving voltage line transmits a driving voltage to the second electrode of the capacitor.

### Claim 9 (depends on 1)

The thin film transistor array substrate of claim 1, wherein
the active layer comprises a crystallized semiconductor material.

### Claim 10

A thin film transistor array substrate comprising:
a driving thin film transistor defined by a plurality of thin film transistors connected in series, wherein the driving thin film transistor comprises:
an active layer comprising:
a plurality of channel regions extending substantially in a first direction; and
a plurality of nodes extending substantially in a second direction perpendicular to the first direction, wherein the plurality of nodes connects the plurality of channel regions; and
a gate electrode disposed overlapping the plurality of channel regions, wherein the gate electrode exposes the plurality of nodes; and
a capacitor comprising:
a first electrode defined by the gate electrode of the driving thin film transistor; and
a second electrode disposed on the first electrode, wherein the second electrode overlaps the driving thin film transistor.

### Claim 11 (depends on 10)

The thin film transistor array substrate of claim 10, wherein
a cut-out is defined in a region of the gate electrode corresponding to the plurality of nodes, wherein the cut-out extends from a side of the gate electrode.

### Claim 12 (depends on 10)

The thin film transistor array substrate of claim 10, wherein
a hole is defined in the region of the gate electrode corresponding to the plurality of nodes.

### Claim 13

An organic light emitting display apparatus comprising:
a driving thin film transistor comprising:
an active layer having a bent shape, wherein the active layer comprises:
a first active pattern extending substantially in a first direction; and
a second active pattern extending substantially in a second direction perpendicular to the first direction and connected to the first active pattern; and
a gate electrode disposed on the active layer, wherein the gate electrode overlaps the active layer and exposes the second active pattern;
a capacitor comprising:
a first electrode defined by the gate electrode; and
a second electrode disposed on the first electrode, wherein the second electrode overlaps substantially an entire surface of the first electrode; and
an organic light emitting diode which emits light by receiving a driving current from the driving thin film transistor.

### Claim 14 (depends on 13)

The organic light emitting display apparatus of claim 13, wherein a hole is defined in a region of the gate electrode corresponding to the second active pattern.

### Claim 15 (depends on 13)

The organic light emitting display apparatus of claim 13, wherein
an opening is defined in the second electrode of the capacitor.

### Claim 16 (depends on 13)

The organic light emitting display apparatus of claim 13, further comprising:
a first insulating film which covers the active layer;
a second insulating film which covers the first electrode of the capacitor; and
an interlayer insulating film which covers the second electrode of the capacitor.

### Claim 17 (depends on 16)

The organic light emitting display apparatus of claim 16, further comprising:
a connection wiring disposed on the interlayer insulating film, wherein the connection wire connects the first electrode of the capacitor and a thin film transistor through a contact hole defined through the second insulating film and the interlayer insulating film in a region corresponding to the opening in the second electrode of the capacitor.

### Claim 18 (depends on 17)

The organic light emitting display apparatus of claim 17, further comprising:
a compensation thin film transistor which compensates a threshold voltage of the driving thin film transistor; and
an initialization thin film transistor which transmits an initialization voltage to the gate electrode of the driving thin film transistor.

### Claim 19 (depends on 18)

The organic light emitting display apparatus of claim 18, wherein
a gate electrode of the compensation thin film transistor and a gate electrode of the initialization thin film transistor are disposed in a same layer as the first electrode of the capacitor.

### Claim 20 (depends on 17)

The organic light emitting display apparatus of claim 17, further comprising:
a driving voltage line disposed in a same layer as the connection wiring and connected to the second electrode of the capacitor,
wherein the driving voltage line transmits a driving voltage to the second electrode of the capacitor.