# US 9,040,998 B2 · Light-emitting device

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- Number: US 9,040,998 B2
- Document ID: US9040998B2
- Status: Granted
- Kind: B2
- Application number: 13/530,392
- Filed: 2012-06-22
- Published: 2012-12-27
- Granted: 2015-05-26
- Earliest claimed: 2011-06-24
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Takuya Tsurume; Hideomi Suzawa; Shunpei Yamazaki
- Inventors: Takuya Tsurume; Hideomi Suzawa; Shunpei Yamazaki
- Web page: https://patentgrep.com/patent/US9040998B2

## CPC

- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/87: {Passivation; Containers; Encapsulations}
- H10K 59/874: {including getter material or desiccant}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

## Claims

### Claim 1

A light-emitting device comprising:
a transistor;
a first electrode over and electrically connected to the transistor;
a first partition comprising an opening portion over the first electrode and covering an end portion of the first electrode;
a second partition over the first partition;
a light-emitting layer over the first electrode, the first partition, and the second partition; and
a second electrode over the light-emitting layer,
wherein the second partition comprises a metal oxide having a porous structure in which a plurality of holes is included.

### Claim 2 (depends on 1)

The light-emitting device according to claim 1, wherein the second partition has a porosity of 50% or more within a range of 10% in volume from a surface to an inside of the second partition when a total volume of the second partition comprising the plurality of holes is 100%.

### Claim 3 (depends on 1)

The light-emitting device according to claim 1, wherein 50% or more of cross sections of pores formed in a cross section of the second partition each have an area of more than or equal to 1 nm2 and less than or equal to 10000 nm2.

### Claim 4 (depends on 1)

The light-emitting device according to claim 1, wherein the second partition surrounds the first electrode.

### Claim 5 (depends on 1)

The light-emitting device according to claim 1, wherein an angle between an upper surface of the first partition and a side surface of the second partition is less than 90°.

### Claim 6 (depends on 1)

The light-emitting device according to claim 1, wherein the second partition comprises at least one selected from the group consisting of silicon oxide, aluminum oxide, gallium oxide, tin oxide, titanium oxide, vanadium oxide, zirconium oxide, and niobium oxide.

### Claim 7 (depends on 1)

The light-emitting device according to claim 1, wherein the transistor comprises an oxide semiconductor in a channel formation region.

### Claim 8 (depends on 7)

The light-emitting device according to claim 7, wherein the oxide semiconductor comprises indium, gallium, and zinc.

### Claim 9

A light-emitting device comprising:
a transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
a semiconductor layer over the first insulating layer; and
a first electrode and a second electrode over and electrically connected to the semiconductor layer;
a capacitor comprising:
the gate electrode;
the first insulating layer; and
the first electrode;
a third electrode over and electrically connected to the second electrode;
a first partition comprising an opening over the third electrode and covering an end portion of the third electrode;
a second partition over the first partition;
a light-emitting layer over the third electrode, the first partition, and the second partition; and
a fourth electrode over the light-emitting layer,
wherein the second partition comprises a metal oxide having a porous structure in which a plurality of holes is included, and
wherein the capacitor overlaps with the second partition.

### Claim 10 (depends on 9)

The light-emitting device according to claim 9, wherein the second partition has a porosity of 50% or more within a range of 10% in volume from a surface to an inside of the second partition when a total volume of the second partition comprising the plurality of holes is 100%.

### Claim 11 (depends on 9)

The light-emitting device according to claim 9, wherein 50% or more of cross sections of pores formed in a cross section of the second partition each have an area of more than or equal to 1 nm2 and less than or equal to 10000 nm2.

### Claim 12 (depends on 9)

The light-emitting device according to claim 9, wherein the second partition surrounds the third electrode.

### Claim 13 (depends on 9)

The light-emitting device according to claim 9, wherein an angle between an upper surface of the first partition and a side surface of the second partition is less than 90°.

### Claim 14 (depends on 9)

The light-emitting device according to claim 9, wherein the second partition comprises at least one selected from the group consisting of silicon oxide, aluminum oxide, gallium oxide, tin oxide, titanium oxide, vanadium oxide, zirconium oxide, and niobium oxide.

### Claim 15 (depends on 9)

The light-emitting device according to claim 9, wherein the semiconductor layer comprises an oxide semiconductor.

### Claim 16 (depends on 15)

The light-emitting device according to claim 15, wherein the oxide semiconductor comprises indium, gallium, and zinc.