# US 9,040,994 B2 · Thin film transistor, display device and manufacturing thereof, display apparatus

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- Number: US 9,040,994 B2
- Document ID: US9040994B2
- Status: Granted
- Kind: B2
- Application number: 14/048,477
- Filed: 2013-10-08
- Published: 2014-04-10
- Granted: 2015-05-26
- Earliest claimed: 2012-10-08
- Assignees: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd.
- Applicants: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd.
- Inventors: Jeong Hun Rhee; Lianhua Che
- Web page: https://patentgrep.com/patent/US9040994B2

## CPC

- H10D 30/6732: {Bottom-gate only TFTs}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 30/6746: {Amorphous silicon}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A thin-film transistor (TFT) comprises a gate electrode, a gate insulating layer, a source electrode and a drain electrode which are formed on a base substrate, the source electrode and the drain electrode are disposed on different layers and isolated from each other through a semiconductor connecting section made of an oxide semiconductor material; a position of the semiconductor connecting section corresponds to a position of the gate electrode; and at least one part of the source electrode and at least one part of the drain electrode overlap each other at a position corresponding to the semiconductor connecting section. A display device comprising the TFT and a display device comprising the display device are also disclosed.

## Claims

### Claim 1

A thin-film transistor (TFT),
comprising
a gate electrode,
a gate insulating layer,
a source electrode and
a drain electrode formed on a base substrate,
wherein
the source electrode and the drain electrode are
disposed on different layers and
isolated from each other through a semiconductor connecting section made of an oxide semiconductor material;
a position of the semiconductor connecting section corresponding to a position of the gate electrode; and
at least one part of the source electrode and at least one part of the drain electrode overlap each other at a position corresponding to the semiconductor connecting section;
wherein
the drain electrode
is disposed
on the gate insulating layer and
on one side of the semiconductor connecting section and
makes contact with the semiconductor connecting section; and
the source electrode is disposed on and fully covers an upper surface of the semiconductor connecting section.

### Claim 2 (depends on 1)

The TFT according to claim 1, wherein a thickness of the drain electrode is more than that of the semiconductor connecting section; and
a contact surface of the semiconductor connecting section with the drain electrode is extended up to a top of the drain electrode.

### Claim 3 (depends on 1)

A display device, comprising the TFT according to claim 1.

### Claim 4 (depends on 3)

The display device according to claim 3, wherein the display device further comprises a passivation layer formed on the TFT; and
the passivation layer is provided with a via hole in an area corresponding to the gate electrode of the TFT.

### Claim 5 (depends on 4)

The display device according to claim 4, wherein the TFT employs a part of a corresponding gate line of the display device as the gate electrode;
the drain electrode on the base substrate is disposed on one side of the corresponding gate line;
the drain electrode is connected with a data line of the display device; and
a straight line in an arrangement direction of the drain electrode, the source electrode and the semiconductor connecting section is perpendicular to the corresponding gate line.

### Claim 6 (depends on 4)

The display according to claim 4, wherein the TFT employs a part of a corresponding gate line as the gate electrode;
the drain electrode is connected with a data line of the display device;
the drain electrode, the source electrode and the semiconductor connecting section are disposed in an area of the gate line; and
a straight line in an arrangement direction of the drain electrode, the source electrode and the semiconductor connecting section is parallel to the corresponding gate line.

### Claim 7 (depends on 4)

A display device, comprising the display device according to claim 4.