# US 9,040,985 B2 · Semiconductor device and method for manufacturing the same

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- Number: US 9,040,985 B2
- Document ID: US9040985B2
- Status: Granted
- Kind: B2
- Application number: 14/331,460
- Filed: 2014-07-15
- Published: 2014-10-30
- Granted: 2015-05-26
- Earliest claimed: 2009-01-23
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Junichiro Sakata; Takashi Shimazu; Hiroki Ohara; Toshinari Sasaki; Shunpei Yamazaki
- Web page: https://patentgrep.com/patent/US9040985B2

## CPC

- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10P 14/3426: {Oxides}
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.

## Claims

### Claim 1

A semiconductor device comprising:
a gate electrode;
an oxide semiconductor layer adjacent to the gate electrode;
an insulating layer between the gate electrode and the oxide semiconductor layer;
a source electrode electrically connected to the oxide semiconductor layer through a source region; and
a drain electrode electrically connected to the oxide semiconductor layer through a drain region,
wherein the gate electrode comprises a stack of a first layer comprising copper and a second layer comprising a conductive material having heat resistance higher than copper, and
wherein each of the source region and the drain region comprises a material comprising nitrogen.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the material comprising nitrogen is a non-single-crystal.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises an In—Ga—Zn based oxide semiconductor.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein a whole of the oxide semiconductor layer overlaps with the gate electrode.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the gate electrode is located under the oxide semiconductor layer.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a second insulating layer over the oxide semiconductor layer,
wherein the second insulating layer comprises silicon and oxygen, and
wherein the second insulating layer comprises a region located between the source electrode and the drain electrode, and the region is in contact with an upper surface of the oxide semiconductor layer.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the conductive material is one selected from the group consisting of titanium, molybdenum and tungsten.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the material comprising nitrogen is a Zn—O—N based material.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the material comprising nitrogen is a Sn—Zn—O—N based material.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a layer capable of attenuating an intensity of light incident on the oxide semiconductor layer, the layer is located over the oxide semiconductor layer.

### Claim 11

A semiconductor device comprising:
a gate electrode;
an oxide semiconductor layer adjacent to the gate electrode;
an insulating layer between the gate electrode and the oxide semiconductor layer;
a source electrode electrically connected to the oxide semiconductor layer through a source region; and
a drain electrode electrically connected to the oxide semiconductor layer through a drain region,
wherein the gate electrode comprises a stack of a first layer comprising copper and a second layer comprising a conductive material having heat resistance higher than copper, and
wherein each of the source region and the drain region comprises a Ga—Zn—O—N based material.

### Claim 12 (depends on 11)

The semiconductor device according to claim 11, wherein the Ga—Zn—O—N based material is a non-single-crystal.

### Claim 13 (depends on 11)

The semiconductor device according to claim 11, wherein the oxide semiconductor layer comprises an In—Ga—Zn-based oxide semiconductor.

### Claim 14 (depends on 11)

The semiconductor device according to claim 11, wherein a whole of the oxide semiconductor layer overlaps with the gate electrode.

### Claim 15 (depends on 11)

The semiconductor device according to claim 11, wherein the gate electrode is located under the oxide semiconductor layer.

### Claim 16 (depends on 11)

The semiconductor device according to claim 11, further comprising:
a second insulating layer over the oxide semiconductor layer,
wherein the second insulating layer comprises silicon and oxygen, and
wherein the second insulating layer comprises a region located between the source electrode and the drain electrode, and the region is in contact with an upper surface of the oxide semiconductor layer.

### Claim 17 (depends on 11)

The semiconductor device according to claim 11, wherein the conductive material is one selected from the group consisting of titanium, molybdenum and tungsten.

### Claim 18 (depends on 11)

The semiconductor device according to claim 11, further comprising:
a layer capable of attenuating an intensity of light incident on the oxide semiconductor layer, the layer is located over the oxide semiconductor layer.

### Claim 19

A semiconductor device comprising:
a gate electrode;
an oxide semiconductor layer adjacent to the gate electrode;
an insulating layer between the gate electrode and the oxide semiconductor layer;
a source electrode electrically connected to the oxide semiconductor layer through a source region; and
a drain electrode electrically connected to the oxide semiconductor layer through a drain region,
wherein the gate electrode comprises a stack of a first layer comprising copper and a second layer comprising a conductive material having heat resistance higher than copper, and
wherein each of the source region and the drain region comprises an In—Ga—Zn—O—N based material.

### Claim 20 (depends on 19)

The semiconductor device according to claim 19, wherein the In—Ga—Zn—O—N based material is a non-single-crystal.

### Claim 21 (depends on 19)

The semiconductor device according to claim 19, wherein the oxide semiconductor layer comprises an In—Ga—Zn-based oxide semiconductor.

### Claim 22 (depends on 19)

The semiconductor device according to claim 19, wherein a whole of the oxide semiconductor layer overlaps with the gate electrode.

### Claim 23 (depends on 19)

The semiconductor device according to claim 19, wherein the gate electrode is located under the oxide semiconductor layer.

### Claim 24 (depends on 19)

The semiconductor device according to claim 19, further comprising:
a second insulating layer over the oxide semiconductor layer,
wherein the second insulating layer comprises silicon and oxygen, and
wherein the second insulating layer comprises a region located between the source electrode and the drain electrode, and the region is in contact with an upper surface of the oxide semiconductor layer.

### Claim 25 (depends on 19)

The semiconductor device according to claim 19, wherein the conductive material is one selected from the group consisting of titanium, molybdenum and tungsten.

### Claim 26 (depends on 19)

The semiconductor device according to claim 19, further comprising:
a layer capable of attenuating an intensity of light incident on the oxide semiconductor layer, the layer is located over the oxide semiconductor layer.