# US 9,040,967 B2 · Method for manufacturing organic electroluminescence device and organic electroluminescence device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,967 B2 - Document ID: US9040967B2 - Status: Granted - Kind: B2 - Application number: 13/989,878 - Filed: 2010-12-01 - Published: 2013-09-26 - Granted: 2015-05-26 - Earliest claimed: 2010-12-01 - Assignees: Joled Inc. - Applicants: Tomomi Hiraoka - Inventors: Tomomi Hiraoka - Web page: https://patentgrep.com/patent/US9040967B2 ## CPC - H05B 33/10: Apparatus or processes specially adapted to the manufacture of electroluminescent light sources - H10K 71/421: {using coherent electromagnetic radiation, e.g. laser annealing} - H10K 59/80524: {Transparent cathodes, e.g. comprising thin metal layers} - H10K 71/861: {Repairing} - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A method for manufacturing an organic electroluminescence device includes: preparing an organic electroluminescence device including a lower electrode, an organic layer including a light-emitting layer, and an upper electrode and having a part in which the lower electrode and the upper electrode are shorted, at least one of the lower electrode and the upper electrode being made of a transparent conductive material; and irradiating the transparent conductive material in at least one of the part where the lower electrode and the upper electrode are shorted and a part around the shorted part with a femtosecond laser, and increasing resistance by changing a structure of the transparent conductive material. ## Claims ### Claim 1 A method for manufacturing an organic electroluminescence device, comprising: preparing an organic electroluminescence device including a lower electrode, an organic layer including a light-emitting layer, and an upper electrode and having a part in which the lower electrode and the upper electrode are shorted, at least one of the lower electrode and the upper electrode being made of a transparent conductive material; and irradiating the transparent conductive material in at least one of the part where the lower electrode and the upper electrode are shorted and a part around the shorted part with a femtosecond laser, and increasing resistance by changing a structure of the transparent conductive material, wherein, when irradiating the transparent conductive material with the femtosecond laser, the structure of the transparent conductive material in the at least one of the part where the lower electrode and the upper electrode are shorted and the part around the shorted part is changed to a granular structure. ### Claim 2 (depends on 1) The method for manufacturing the organic electroluminescence device according to claim 1, wherein a grain size of particles composing the granular structure is in a range from 10 to 500 nm. ### Claim 3 (depends on 1) The method for manufacturing the organic electroluminescence device according to claim 1, wherein a wavelength of the femtosecond laser is in a range from 900 to 2500 nm. ### Claim 4 (depends on 1) The method for manufacturing the organic electroluminescence device according to claim 1, wherein the transparent conductive material is a transparent metal oxide. ### Claim 5 (depends on 1) The method for manufacturing the organic electroluminescence device according to claim 1, wherein the transparent conductive material before being irradiated with the femtosecond laser is in an amorphous state. ### Claim 6 (depends on 1) The method for manufacturing the organic electroluminescence device according to claim 1, wherein a thickness of the lower electrode or the upper electrode made of the transparent conductive material is in a range from 10 to 40 nm. ### Claim 7 (depends on 1) The method for manufacturing the organic electroluminescence device according to claim 1, further comprising forming a protective layer above the upper electrode before irradiating the transparent conductive material with the femtosecond laser, wherein when irradiating the transparent conductive material with the femtosecond laser, the transparent conductive material of at least one of the shorted part and the part around the shorted part is irradiated with the femtosecond laser via the protective layer. ### Claim 8 (depends on 1) The method for manufacturing the organic electroluminescence device according to claim 1, wherein the shorted part includes a conductive foreign material in the organic layer. ### Claim 9 (depends on 8) The method for manufacturing the organic electroluminescence device according to claim 8, further comprising detecting the conductive foreign material, wherein the transparent conductive material around the conductive foreign material is irradiated with the laser. ### Claim 10 (depends on 1) The method for manufacturing the organic electroluminescence device according to claim 1, wherein a thickness of the organic layer in the shorted part is smaller than a thickness of the organic layer in a part other than the shorted part. ### Claim 11 A method for manufacturing an organic electroluminescence device, comprising: preparing an organic electroluminescence device including a substrate having a thin-film transistor, a planarizing film formed above the substrate, a lower electrode formed above the planarizing film, an organic layer including a light-emitting layer, an upper electrode, and a protective layer formed in contact with a surface of the upper electrode, the organic electroluminescence device having a part in which the lower electrode and the upper electrode are shorted, at least one of the lower electrode and the upper electrode being made of a transparent conductive material; and irradiating the transparent conductive material in at least one of the part where the lower electrode and the upper electrode are shorted and a part around the shorted part via the protective layer with a femtosecond laser, and increasing resistance by changing a structure of the transparent conductive material, wherein, when irradiating the transparent conductive material with the femtosecond laser, the structure of the transparent conductive material in the at least one of the part where the lower electrode and the upper electrode are shorted and the part around the shorted part is changed to a granular structure.