# US 9,040,964 B2 · Thin film semiconductor device and organic light-emitting display apparatus

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- Number: US 9,040,964 B2
- Document ID: US9040964B2
- Status: Granted
- Kind: B2
- Application number: 13/954,966
- Filed: 2013-07-30
- Published: 2014-08-28
- Granted: 2015-05-26
- Earliest claimed: 2013-02-28
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Ki-Yeol Byun
- Web page: https://patentgrep.com/patent/US9040964B2

## CPC

- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An apparatus and a method of manufacturing a thin film semiconductor device having a thin film transistor with improved electrical properties in organic light-emitting display apparatus are described.

## Claims

### Claim 1

A thin film semiconductor device comprising:
a substrate;
an active pattern on the substrate and comprising a rounded upper edge portion;
a first gate insulation film exposing the rounded upper edge portion of the active pattern and covering a flat upper surface of the active pattern;
a second gate insulation film covering the rounded upper edge portion of the active pattern and covering the first gate insulation film; and
a gate electrode overlapping a part of the active pattern,
wherein the first gate insulation film and the second gate insulation film are interposed between the active pattern and the gate electrode.

### Claim 2 (depends on 1)

The thin film semiconductor device of claim 1, wherein the active pattern further comprises:
a source region;
a drain region; and
a channel region between the source region and the drain region, and comprising the rounded upper edge portion and a rounded lower edge portion.

### Claim 3 (depends on 2)

The thin film semiconductor device of claim 2, further comprising a gate electrode extending across the active pattern in the channel region of the active pattern.

### Claim 4 (depends on 1)

The thin film semiconductor device of claim 1, further comprising a buffer film interposed between the substrate and the active pattern,
wherein the active pattern further comprises an angled lower edge portion.

### Claim 5 (depends on 1)

The thin film semiconductor device of claim 1, wherein the active pattern further comprises a silicon material.

### Claim 6

A thin film semiconductor device comprising:
a substrate;
an active pattern on the substrate and comprising a rounded upper edge portion and a rounded lower edge portion;
a first buffer film on the substrate; and
a second buffer film on the first buffer film and contacting a flat lower surface of the active pattern without contacting the rounded lower edge portion of the active pattern.

### Claim 7 (depends on 6)

The thin film semiconductor device of claim 6, further comprising a thermal oxide film surrounding the rounded upper edge portion, the rounded lower edge portion, and a lateral surface of the active pattern,
wherein a portion of the thermal oxide film on the rounded upper edge portion or on the rounded lower edge portion is thicker than a portion of the thermal oxide film on the lateral surface.

### Claim 8

An organic light-emitting display apparatus comprising:
a substrate;
a plurality of thin film transistors on the substrate;
a pixel electrode electrically connected to one of the plurality of thin film transistors;
an opposed electrode on the pixel electrode; and
an interlayer between the pixel electrode and the opposed electrode, and comprising an organic light-emitting layer,
wherein the at least one of the plurality of thin film transistors further comprises:
an active pattern on the substrate and comprising a rounded upper edge portion;
a first gate insulation film exposing the rounded upper edge portion and covering a flat portion of an upper surface of the active pattern;
a second gate insulation film covering the rounded upper edge portion and the first gate insulation film; and
a gate electrode on the first gate insulation film and the second gate insulation film, and overlapping part of the active pattern.

### Claim 9 (depends on 8)

The organic light-emitting display apparatus of claim claim 8, wherein the active pattern further comprises a rounded lower edge portion.

### Claim 10 (depends on 9)

The organic light-emitting display apparatus of claim 9, further comprising:
a first buffer film on the substrate; and
a second buffer film on the first buffer film, and contacting a flat lower surface of the active pattern without contacting the rounded lower edge portion of the active pattern.

### Claim 11 (depends on 8)

The organic light-emitting display apparatus of claim 8, wherein the active pattern comprises:
a source region;
a drain region; and
a channel region between the source region and the drain region and comprising the rounded upper edge portion and a rounded lower edge portion.