# US 9,040,954 B2 · Semiconductor light emitting device and method for manufacturing the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,040,954 B2
- Document ID: US9040954B2
- Status: Granted
- Kind: B2
- Application number: 14/207,236
- Filed: 2014-03-12
- Published: 2014-07-10
- Granted: 2015-05-26
- Earliest claimed: 2007-08-28
- Assignees: LG Innotek Co., Ltd.
- Applicants: LG Innotek Co., Ltd.
- Inventors: Tae Yun Kim; Hyo Kun Son
- Web page: https://patentgrep.com/patent/US9040954B2

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/8252: {characterised by the dopants}
- H10P 14/3448: {Delta-doping}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

## Claims

### Claim 1

A light emitting device comprising:
a first conductive type semiconductor layer;
a first delta doped layer on the first conductive type semiconductor layer;
a super lattice structure on the first delta doped layer;
an active layer on the super lattice layer;
a second conductive type cladding layer on the active layer; and
a second conductive type semiconductor layer on the second conductive type cladding layer,
wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.

### Claim 2 (depends on 1)

The light emitting device according to claim 1, wherein the first delta doped layer is formed at a thickness of 0.2 nm˜0.5 nm.

### Claim 3 (depends on 1)

The light emitting device according to claim 1, wherein the super lattice structure is formed at a thickness of 5 Ř200 Å.

### Claim 4 (depends on 1)

The light emitting device according to claim 1, wherein the first conductive type semiconductor layer is a n-type semiconductor layer.

### Claim 5 (depends on 1)

The light emitting device according to claim 1, wherein the first conductive type layer comprises a GaN layer.

### Claim 6 (depends on 1)

The light emitting device according to claim 1, wherein the active layer includes InGaN layer and GaN layer.

### Claim 7 (depends on 1)

The light emitting device according to claim 1, further comprising a dopant doped layer under the first conductive semiconductor layer.

### Claim 8 (depends on 7)

The light emitting device according to claim 7, wherein the dopant doped layer is an n-type semiconductor layer.

### Claim 9 (depends on 1)

The light emitting device according to claim 1, further comprising a third semiconductor layer on the second conductive type semiconductor layer,
wherein the third semiconductor layer is a n-type semiconductor layer.

### Claim 10 (depends on 9)

The light emitting device according to claim 9, wherein the third semiconductor layer has a composition formula of InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

### Claim 11 (depends on 1)

The light emitting device according to claim 1, wherein the first delta doped layer and the first conductive type semiconductor layer are doped with an n-type dopant.

### Claim 12

A light emitting device comprising:
a first conductive type semiconductor layer comprising an AlGaN layer;
a first delta doped layer on the first conductive type semiconductor layer;
a super lattice structure on the first delta doped layer;
a second delta doped layer on the super lattice structure;
an active layer on the second delta doped layer;
a second conductive type cladding layer on the active layer; and
a second conductive type semiconductor layer on the second conductive type cladding layer,
wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.

### Claim 13 (depends on 12)

The light emitting device according to claim 12, wherein a ratio of the thickness of the super lattice structure to a thickness of the second delta doped layer is in a range of about 1 to 100.

### Claim 14 (depends on 12)

The light emitting device according to claim 12, further comprising a dopant doped layer under the first conductive type semiconductor layer.

### Claim 15 (depends on 14)

The light emitting device according to claim 14, wherein the dopant doped layer is an n-type semiconductor layer.

### Claim 16

A light emitting device comprising:
a first conductive type semiconductor layer comprising an AlGaN layer;
a first delta doped layer on the first conductive type semiconductor layer;
a second delta doped layer on the first delta doped layer;
a super lattice structure on the first delta doped layer;
a third delta doped layer on the super lattice structure;
an active layer on a third delta doped layer;
a second conductive type cladding layer on the active layer; and
a second conductive type semiconductor layer on the second conductive type cladding layer,
wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.

### Claim 17 (depends on 16)

The light emitting device according to claim 16, wherein a ratio of the thickness of the super lattice structure to a thickness of the second delta doped layer is in a range of about 1 to 100.

### Claim 18 (depends on 16)

The light emitting device according to claim 16, wherein a ratio of the thickness of the super lattice structure to a thickness of the third delta doped layer is in a range of about 1 to 100.

### Claim 19 (depends on 16)

The light emitting device according to claim 16, further comprising a dopant doped layer under the first conductive type semiconductor layer.

### Claim 20 (depends on 19)

The light emitting device according to claim 19, wherein the dopant doped layer is an n-type semiconductor layer.