# US 9,040,950 B2 · Nonvolatile memory device and method for manufacturing same

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- Number: US 9,040,950 B2
- Document ID: US9040950B2
- Status: Granted
- Kind: B2
- Application number: 13/225,926
- Filed: 2011-09-06
- Published: 2012-03-22
- Granted: 2015-05-26
- Earliest claimed: 2010-09-16
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kouji Matsuo
- Inventors: Kouji Matsuo
- Web page: https://patentgrep.com/patent/US9040950B2

## CPC

- H10N 70/021: {Formation of switching materials, e.g. deposition of layers}
- H10B 63/20: {comprising selection components having two electrodes, e.g. diodes}
- H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays}
- H10N 70/24: {based on migration or redistribution of ionic species, e.g. anions, vacancies}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/828: {Current flow limiting means within the switching material region, e.g. constrictions}
- H10N 70/8833: {Binary metal oxides, e.g. TaOx}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

According to one embodiment, a nonvolatile memory device includes a first interconnect, an insulating layer, a needle-like metal oxide, and a second interconnect. The insulating layer is provided on the first interconnect. The needle-like metal oxide pierces the insulating layer in a vertical direction. The second interconnect is provided on the insulating layer.

## Claims

### Claim 1

A nonvolatile memory device, comprising:
a first interconnect;
an insulating layer provided on the first interconnect;
a needle-like metal oxide piercing the insulating layer to extend throughout an entire thickness of the insulating layer in a vertical direction; and
a second interconnect provided on the insulating layer;
wherein
the insulating layer is formed of an oxide, and
an absolute value of a change of a Gibbs free energy per mole of oxygen atoms when a metal included in the needle-like metal oxide changes into a metal oxide of the needle-like metal oxide is less than an absolute value of a change of a Gibbs free energy per mole of oxygen atoms when a metal or a semimetal included in the insulating layer changes into the oxide of the insulating layer; and
further comprising a lower electrode layer provided between the first interconnect and the insulating layer to contact the insulating layer,
the needle-like metal oxide being formed of an oxide of the same type of metal as a metal included in the lower electrode layer.

### Claim 2 (depends on 1)

The device according to claim 1, wherein the oxide is silicon oxide.

### Claim 3 (depends on 1)

The device according to claim 1, wherein an oxygen concentration of an upper end portion of the needle-like metal oxide increases when a potential higher than a potential of the first interconnect is applied to the second interconnect.

### Claim 4 (depends on 1)

The device according to claim 1, wherein an oxygen concentration of a lower end portion of the needle-like metal oxide does not increase when a potential higher than a potential of the second interconnect is applied to the first interconnect.

### Claim 5 (depends on 1)

The device according to claim 1, wherein the needle-like metal oxide contains tungsten or molybdenum.

### Claim 6 (depends on 1)

The device according to claim 1, wherein the oxide is manganese oxide, the metal included in the lower electrode layer is nickel, and the needle-like metal oxide is formed of nickel oxide.

### Claim 7 (depends on 1)

The device according to claim 1, further comprising
an upper electrode layer provided between the second interconnect and the insulating layer to contact the insulating layer,
the needle-like metal oxide being in contact with the upper electrode layer.

### Claim 8 (depends on 7)

The device according to claim 7, wherein the needle-like metal oxide is in contact with the lower electrode layer.

### Claim 9 (depends on 1)

The device according to claim 1, wherein the needle-like metal oxide is a whisker grown from the lower electrode layer.

### Claim 10 (depends on 9)

The device according to claim 9, wherein a lower end portion of the needle-like metal oxide is integrally bonded to the lower electrode layer.

### Claim 11 (depends on 1)

The device according to claim 1, wherein:
the second interconnect and the first interconnect extend in mutually intersecting directions;
a first interconnect layer including a plurality of the first interconnects is stacked alternately with a second interconnect layer including a plurality of the second interconnects; and
the insulating layer is provided between the first interconnects and the second interconnects.

### Claim 12 (depends on 1)

The device according to claim 1, wherein the needle-like metal oxide is a semiconductor.

### Claim 13

A nonvolatile memory device, comprising:
a first interconnect;
an insulating layer provided on the first interconnect;
a needle-like metal oxide piercing the insulating layer to extend throughout an entire thickness of the insulating layer in a vertical direction;
a second interconnect provided on the insulating layer; and
a lower electrode layer provided between the first interconnect and the insulating layer to contact the insulating layer,
the needle-like metal oxide being formed of an oxide of the same type of metal as a metal included in the lower electrode layer.

### Claim 14 (depends on 13)

The device according to claim 13, wherein the needle-like metal oxide contains tungsten or molybdenum.

### Claim 15 (depends on 13)

The device according to claim 13, wherein the oxide is manganese oxide, the metal included in the lower electrode layer is nickel, and the needle-like metal oxide is formed of nickel oxide.

### Claim 16 (depends on 13)

The device according to claim 13, further comprising
an upper electrode layer provided between the second interconnect and the insulating layer to contact the insulating layer,
the needle-like metal oxide being in contact with the upper electrode layer.

### Claim 17 (depends on 16)

The device according to claim 16, wherein the needle-like metal oxide is in contact with the lower electrode layer.

### Claim 18 (depends on 13)

The device according to claim 13, wherein the needle-like metal oxide is a whisker grown from the lower electrode layer.

### Claim 19 (depends on 18)

The device according to claim 18, wherein a lower end portion of the needle-like metal oxide is integrally bonded to the lower electrode layer.

### Claim 20 (depends on 13)

The device according to claim 13, wherein:
the second interconnect and the first interconnect extend in mutually intersecting directions;
a first interconnect layer including a plurality of the first interconnects is stacked alternately with a second interconnect layer including a plurality of the second interconnects; and
the insulating layer is provided between the first interconnects and the second interconnects.

### Claim 21 (depends on 13)

The device according to claim 13, wherein the needle-like metal oxide is a semiconductor.

### Claim 22

A nonvolatile memory device, comprising:
a first interconnect;
an insulating layer provided on the first interconnect;
a needle-like metal oxide piercing the insulating layer to extend throughout an entire thickness of the insulating layer in a vertical direction; and
a second interconnect provided on the insulating layer; wherein:
the second interconnect and the first interconnect extend in mutually intersecting directions;
a first interconnect layer including a plurality of the first interconnects is stacked alternately with a second interconnect layer including a plurality of the second interconnects; and
the insulating layer is provided between the first interconnects and the second interconnects.

### Claim 23 (depends on 22)

The device according to claim 22, wherein the needle-like metal oxide contains tungsten or molybdenum.

### Claim 24 (depends on 22)

The device according to claim 22, wherein the needle-like metal oxide is a semiconductor.