# US 9,040,922 B2 · THz frequency range antenna > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,922 B2 - Document ID: US9040922B2 - Status: Granted - Kind: B2 - Application number: 13/375,776 - Filed: 2010-06-04 - Published: 2012-03-29 - Granted: 2015-05-26 - Earliest claimed: 2009-06-03 - Assignees: Koninklijke Philips N.V. - Applicants: Jaime Gomez Rivas; Vincenzo Giannini; Audrey Anne-Marie Berrier; Stefan Alexander Maier; Marion Matters-Kammerer; Lorenzo Tripodi - Inventors: Jaime Gomez Rivas; Vincenzo Giannini; Audrey Anne-Marie Berrier; Stefan Alexander Maier; Marion Matters-Kammerer; Lorenzo Tripodi - Web page: https://patentgrep.com/patent/US9040922B2 ## CPC - G01J 3/42: Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry (beam switching arrangements G01J3/08) - G01J 3/02: Details - G01J 3/0237: {Adjustable, e.g. focussing} - G01J 3/0259: {Monolithic} - G01N 21/3563: for analysing solids; Preparation of samples therefor - G01N 21/3581: using far infrared light; using Terahertz radiation - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract A THz frequency range antenna is provided which comprises: a semiconductor film (3) having a surface adapted to exhibit surface plasmons in the THz frequency range. The surface of the semiconductor film (3) is structured with an antenna structure (4) arranged to support localized surface plasmon resonances in the THz frequency range. ## Claims ### Claim 1 A THz frequency range antenna comprising: a semiconductor film having a surface adapted to exhibit surface plasmons in the THz frequency range, wherein the surface of the semiconductor film is structured to form an antenna structure arranged to support localized surface plasmon resonances in the THz frequency range, the antenna structure having a gap (g) which is controlled for varying at least one dimension thereof. ### Claim 2 (depends on 1) The THz frequency range antenna according to claim 1, wherein the antenna structure comprises at least two elements structured in or on the surface of the semiconductor film and spaced from each other in a direction in parallel to the surface of the semiconductor film by the gap (g). ### Claim 3 (depends on 2) The THz frequency range antenna according to claim 2, wherein the at least one dimension of the gap (g) is the width (Δ), wherein the width (Δ) is in the range between 10 nm and 10 μm, preferably between 50 nm and 200 nm. ### Claim 4 (depends on 1) The THz frequency range antenna according to claim 1, wherein the antenna structure consists of the same material as the semiconductor film. ### Claim 5 (depends on 1) The THz frequency range antenna according to claim 1, characterized in that a functionalized surface adapted to attach pre-determined molecules is provided in a region around the antenna structure and/or in a region around the gap (g). ### Claim 6 (depends on 1) The THz frequency range antenna according to claim 1, wherein the semiconductor film has a thickness in the range between 0.5 μm and 300 μm, preferably between 0.5 μm and 100 μm. ### Claim 7 (depends on 1) The THz frequency range antenna according to claim 1, wherein the semiconductor film is arranged on a substrate which is transparent for electromagnetic radiation in the THz frequency range. ### Claim 8 (depends on 1) The THz frequency range antenna according to claim 1, which is adapted for being inserted between a THz frequency generator and a THz frequency detector. ### Claim 9 (depends on 1) The THz frequency range antenna according to claim 1, wherein the piezoelectric material is used as a piezoelectric substrate or is provided as an piezoelectric intermediate layer between the semiconductor film and the substrate. ### Claim 10 (depends on 1) The THz frequency range antenna according to claim 1, wherein the semiconductor film comprises InSb or InAs as a base material. ### Claim 11 (depends on 1) The THz frequency range antenna according to claim 1, wherein the antenna structure is arranged such that an electric field of the surface plasmon resonances is locally enhanced in the region of the antenna structure. ### Claim 12 An electronic system operating in the THz frequency range comprising a THz frequency range antenna, said antenna comprising: a semiconductor film having a surface adapted to exhibit surface plasmons in the THz frequency range, wherein the surface of the semiconductor film is structured to form an antenna structure arranged to support localized surface plasmon resonances in the THz frequency range, the antenna structure having a gap (g) which is controlled for varying at least one dimension thereof. ### Claim 13 (depends on 12) The electronic system according to claim 12, wherein the system is one of a sensing system, a communication system, an imaging system, a signal processing system, and a light modulating system. ### Claim 14 A system for distinguishing between a THz signal and background noise, comprising a modulator comprising a THz frequency range antenna, the modulator being adapted to tune the resonance of surface plasmons in the region of the THz frequency range antenna on and off by varying the gap width with a predetermined modulation rate, and a detector being controlled by the predetermined modulation rate, wherein the THz frequency range antenna comprises: a semiconductor film having a surface adapted to exhibit surface plasmons in the THz frequency range, wherein the surface of the semiconductor film is structured to form an antenna structure arranged to support localized surface plasmon resonances in the THz frequency range, wherein the semiconductor film is provided on a piezoelectric material. ### Claim 15 A method for tuning the response of a THz frequency range antenna, wherein the method comprises the step: tuning the response by varying at least one dimension of a gap of the THz frequency range antenna, wherein the THz frequency range antenna comprises: a semiconductor film having a surface adapted to exhibit surface plasmons in the THz frequency range, wherein the surface of the semiconductor film is structured to form an antenna structure arranged to support localized surface plasmon resonances in the THz frequency range.