# US 9,040,916 B2 · Visible and near-infrared radiation detector

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- Number: US 9,040,916 B2
- Document ID: US9040916B2
- Status: Granted
- Kind: B2
- Application number: 13/882,914
- Filed: 2011-11-03
- Published: 2013-08-22
- Granted: 2015-05-26
- Earliest claimed: 2010-11-03
- Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Yvon Cazaux; Benoit Giffard; Xavier Hugon
- Inventors: Yvon Cazaux; Benoit Giffard; Xavier Hugon
- Web page: https://patentgrep.com/patent/US9040916B2

## CPC

- G01J 5/20: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- H10F 39/018: {of hybrid image sensors}
- H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8053: {Colour filters}
- H10F 39/806: {Optical elements or arrangements associated with the image sensors}
- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/809: {of hybrid image sensors}
- H10F 39/811: {Interconnections}
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

## Claims

### Claim 1

A detector of visible and near-infrared radiation comprising:
a layer of a material optimized for near-infrared detection;
a near-infrared photosensitive element formed in the layer of the material optimized for near-infrared detection;
a silicon substrate having a frontside covered with the layer of the material optimized for near-infrared detection;
a first readout circuit for reading the near-infrared photosensitive element, formed on the frontside of the silicon substrate;
four visible photosensitive elements, formed in the silicon substrate, one of the visible photosensitive elements being arranged in front of the near-infrared photosensitive element; and
three interference filters respectively associated with three elementary colors and arranged at a backside of the silicon substrate to define a pixel quadruplet, each interference filter comprising an alternation of metal layers and of dielectric layers,
wherein a first pixel of the pixel quadruplet, comprising the near-infrared photosensitive element and one of the visible photosensitive elements, is devoid of interference filter, and the three other pixels of the pixel quadruplet, respectively comprising the three other visible photosensitive elements, are respectively provided with the three interference filters, and
the near-infrared photosensitive element of the first pixel extends over one of the three other pixels.

### Claim 2 (depends on 1)

The detector according to claim 1, wherein the first readout circuit is common to the visible and near-infrared photosensitive elements of the first pixel.

### Claim 3 (depends on 1)

The detector according to claim 1, further comprising a second readout circuit for reading the visible photosensitive element of the first pixel separate from the second readout circuit for reading the near-infrared photosensitive element.

### Claim 4 (depends on 1)

The detector according to claim 1, comprising a near-infrared photosensitive element formed in the layer of the material optimized for near-infrared detection in one of the three other pixels.

### Claim 5 (depends on 1)

The detector according to claim 1, comprising four near-infrared photosensitive elements formed in the layer of the material optimized for near-infrared detection, respectively facing the four visible photosensitive elements.

### Claim 6

A method for producing a visible and near-infrared detector comprising the steps of:
providing a layer of a material optimized for near-infrared detection provided with a near-infrared photosensitive element;
forming a contact metallization of the near-infrared photosensitive element on a frontside of the layer of the material optimized for near-infrared detection;
providing a silicon substrate provided with a visible photosensitive element;
covering the frontside of the silicon substrate with an interconnect layer while leaving a last metallization level exposed; and
placing into contact the frontsides of the layer of the material optimized for near-infrared detection and of the silicon substrate to perform a metal-to-metal bonding of the last metallization level of the interconnect layer with the contact metallization of the near-infrared photosensitive element.