# US 9,040,895 B2 · Photoelectric conversion apparatus and imaging system using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,895 B2 - Document ID: US9040895B2 - Status: Granted - Kind: B2 - Application number: 13/942,346 - Filed: 2013-07-15 - Published: 2013-11-14 - Granted: 2015-05-26 - Earliest claimed: 2009-09-24 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Yasuhiro Kawabata; Hideaki Takada - Web page: https://patentgrep.com/patent/US9040895B2 ## CPC - H10F 39/8027: {Geometry of the photosensitive area} - H04N 25/00: Circuitry of solid-state image sensors [SSIS]; Control thereof - H10F 39/014: {of CMOS image sensors} - H10F 39/807: {Pixel isolation structures} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element. ## Claims ### Claim 1 A photoelectric conversion apparatus comprising: a first photoelectric conversion element having a semiconductor region of a first conductivity type capable of accumulating a signal charge; a second photoelectric conversion element adjacent to the first photoelectric conversion element along a first direction, the second photoelectric conversion element having a semiconductor region of the first conductivity type; a third photoelectric conversion element adjacent to the first photoelectric conversion element along a second direction that crosses the first direction, the third photoelectric conversion element having a semiconductor region of the first conductivity type; a first semiconductor region of a second conductivity type opposite to the first conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the first semiconductor region having a first width; a second semiconductor region of the second conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the third photoelectric conversion element, the second semiconductor region having a second width narrower than the first width; and a third semiconductor region arranged adjacent to the first semiconductor region along a third direction crossing the first direction, and arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the third semiconductor region having a potential for the signal charge lower than that of the first semiconductor region. ### Claim 2 (depends on 1) The photoelectric conversion apparatus according to claim 1, wherein the first and second directions are orthogonal to each other. ### Claim 3 (depends on 1) The photoelectric conversion apparatus according to claim 1, wherein the third semiconductor region has the second conductivity type. ### Claim 4 (depends on 3) The photoelectric conversion apparatus according to claim 3, wherein the third semiconductor region has a third width narrower than the second width. ### Claim 5 (depends on 3) The photoelectric conversion apparatus according to claim 3, wherein the third semiconductor region has an impurity concentration lower than an impurity concentration of the second semiconductor region. ### Claim 6 (depends on 3) The photoelectric conversion apparatus according to claim 3, wherein the third semiconductor region is arranged at a depth shallower than a depth of the second semiconductor region. ### Claim 7 (depends on 3) The photoelectric conversion apparatus according to claim 3, wherein the third and fourth semiconductor regions form a continuous semiconductor region. ### Claim 8 (depends on 1) The photoelectric conversion apparatus according to claim 1, further comprising: a fourth semiconductor region, in which the semiconductor region of the first conductivity type of the first photoelectric conversion element, the semiconductor region of the first conductivity type of the second photoelectric conversion element, the second semiconductor region and the third semiconductor region are arranged. ### Claim 9 (depends on 1) The photoelectric conversion apparatus according to claim 1, further comprising: color filters each arranged correspondingly to each of the first, second and third photoelectric conversion elements, wherein the color filter corresponding to the first photoelectric conversion element has a color that is different from the colors of the color filters corresponding to the second and third photoelectric conversion elements. ### Claim 10 (depends on 1) An imaging system comprising: a photoelectric conversion apparatus according to claim 1; and a signal processing circuit configured to process a signal outputted from the photoelectric conversion apparatus. ### Claim 11 (depends on 1) The photoelectric conversion apparatus according to claim 1, further comprising a transistor, wherein at least a part of the transistor is arranged in the first semiconductor region. ### Claim 12 (depends on 1) The photoelectric conversion apparatus according to claim 1, further comprising a transistor, wherein at least a part of the transistor is arranged in the third semiconductor region. ### Claim 13 (depends on 1) The photoelectric conversion apparatus according to claim 1, wherein the first semiconductor region, the second semiconductor region and the third semiconductor region form a grid-like configuration in a planar view. ### Claim 14 (depends on 1) The photoelectric conversion apparatus according to claim 1, wherein the third semiconductor region extends from the semiconductor region of the first conductivity type of the first photoelectric conversion element to the semiconductor region of the first conductivity type of the second photoelectric conversion element. ### Claim 15 A photoelectric conversion apparatus comprising: a semiconductor substrate; a first photoelectric conversion element, including a semiconductor region of a first conductivity type capable of accumulating a signal charge, the semiconductor region formed in the semiconductor substrate; a second photoelectric conversion element adjacent to the first photoelectric conversion element along a first direction, including a semiconductor region of the first conductivity type, the semiconductor region formed in the semiconductor substrate; a third photoelectric conversion element adjacent to the first photoelectric conversion element along a second direction different from the first direction, including a semiconductor region of the first conductivity type, the semiconductor region formed in the semiconductor region formed in the semiconductor substrate; a first semiconductor region of a second conductivity type opposite to the first conductivity type formed in the semiconductor substrate, arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the first semiconductor region having a first width; a second semiconductor region of the second conductivity type formed in the semiconductor substrate, arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the third photoelectric conversion element, the second semiconductor region having a second width narrower than the first width; and a portion for a charge path between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the portion being arranged adjacent to the first semiconductor region along a direction across the first direction, the portion extending from the semiconductor region of the first conductivity type of the first photoelectric conversion element to the semiconductor region of the first conductivity type of the second photoelectric conversion element. ### Claim 16 (depends on 15) The photoelectric conversion apparatus according to claim 15, wherein the first and second directions are orthogonal to each other. ### Claim 17 (depends on 15) The photoelectric conversion apparatus according to claim 15, further comprising: color filters each arranged correspondingly to each of the first, second and third photoelectric conversion elements, wherein the color filter corresponding to the first photoelectric conversion element has a color that is different from the colors of the color filters corresponding to the second and third photoelectric conversion elements. ### Claim 18 (depends on 15) An imaging system comprising: a photoelectric conversion apparatus according to claim 15; and a signal processing circuit configured to process a signal outputted from the photoelectric conversion apparatus. ### Claim 19 (depends on 15) The photoelectric conversion apparatus according to claim 15, further comprising a transistor, wherein at least a part of the transistor is arranged in the first semiconductor region. ### Claim 20 (depends on 15) The photoelectric conversion apparatus according to claim 15, further comprising a transistor, wherein at least a part of the transistor is arranged in the portion. ### Claim 21 (depends on 15) The photoelectric conversion apparatus according to claim 15, wherein the first semiconductor region, the second semiconductor region and the third semiconductor region form a grid-like configuration in a planar view. ### Claim 22 A photoelectric conversion apparatus comprising: a first photoelectric conversion element having a semiconductor region of a first conductivity type capable of accumulating a signal charge; a second photoelectric conversion element adjacent to the first photoelectric conversion element along a first direction, the second photoelectric conversion element having a semiconductor region of the first conductivity type; a third photoelectric conversion element adjacent to the first photoelectric conversion element along a second direction that crosses the first direction, the third photoelectric conversion element having a semiconductor region of the first conductivity type; a first semiconductor region of a second conductivity type opposite to the first conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the first semiconductor region having a first width; a second semiconductor region of the second conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the third photoelectric conversion element, the second semiconductor region having a second width narrower than the first width; and a third semiconductor region of the second conductivity type arranged adjacent to the first semiconductor region along a third direction crossing the first direction, and arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the third semiconductor region having an impurity concentration lower than an impurity concentration of the second semiconductor region. ### Claim 23 (depends on 22) The photoelectric conversion apparatus according to claim 22, wherein in planar layout, the semiconductor region of the first conductivity type of the first photoelectric conversion element is surrounded by the first semiconductor region, the second semiconductor region, and the third semiconductor region. ### Claim 24 (depends on 22) The photoelectric conversion apparatus according to claim 22, wherein, in planar layout, the semiconductor region of the first conductivity type of the first photoelectric conversion element has a first side and a second side crossing the first side, the first semiconductor region and the third semiconductor region are arranged along the first side, and the second semiconductor region is arranged along the second side. ### Claim 25 (depends on 22) The photoelectric conversion apparatus according to claim 22, further comprising a transistor, wherein at least a part of the transistor is arranged in the first semiconductor region. ### Claim 26 (depends on 22) The photoelectric conversion apparatus according to claim 22, further comprising a transistor, wherein at least a part of the transistor is arranged in the third semiconductor region. ### Claim 27 (depends on 22) The photoelectric conversion apparatus according to claim 22, wherein the first semiconductor region, the second semiconductor region and the third semiconductor region form a grid-like shape in a planar view. ### Claim 28 (depends on 22) The photoelectric conversion apparatus according to claim 22, wherein the third semiconductor region extends from the semiconductor region of the first conductivity type of the first photoelectric conversion element to the semiconductor region of the first conductivity type of the second photoelectric conversion element.