# US 9,040,812 B2 · Photovoltaic device including flexible substrate or inflexible substrate and method for manufacturing the same

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- Number: US 9,040,812 B2
- Document ID: US9040812B2
- Status: Granted
- Kind: B2
- Application number: 13/974,681
- Filed: 2013-08-23
- Published: 2013-12-26
- Granted: 2015-05-26
- Earliest claimed: 2010-03-26
- Assignees: Intellectual Discovery Co., Ltd.
- Applicants: Intellectual Discovery Co., Ltd.
- Inventors: Seung-Yeop Myong
- Web page: https://patentgrep.com/patent/US9040812B2

## CPC

- H10F 77/148: {Shapes of potential barriers}
- H10F 10/172: comprising multiple PIN junctions, e.g. tandem cells
- H10F 77/1625: {Semiconductor nanoparticles embedded in semiconductor matrix}
- H10F 77/1645: {including microcrystalline silicon}
- H10F 77/1648: {including microcrystalline Group IV-IV materials, e.g. microcrystalline SiGe}
- H10F 77/1698: {the metallic or insulating substrates being flexible}
- H10F 77/703: {of the semiconductor bodies, e.g. textured active layers}
- Y02E 10/52: PV systems with concentrators
- Y02E 10/545: Microcrystalline silicon PV cells
- Y02E 10/548: Amorphous silicon PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

## Claims

### Claim 1

A photovoltaic device comprising:
a substrate;
a first electrode disposed on the substrate;
a second electrode disposed opposite to the first electrode and on which light is incident;
a first unit cell disposed between the first electrode and the second electrode, the first unit cell comprising an intrinsic semiconductor layer comprising a first surface that is textured by exposed crystalline silicon grains and that faces the second electrode, and a non-textured opposing second surface; and
a second unit cell disposed between the first unit cell and the second electrode,
wherein an average crystal volume fraction of the intrinsic semiconductor layer of the first unit cell is equal to or greater than 25% and equal to or less than 75%, and
wherein the intrinsic semiconductor layer comprises a mixed phase hydrogenated microcrystalline silicon based material comprising an amorphous silicon based material that partially covers the exposed crystalline silicon grains.

### Claim 2 (depends on 1)

The photovoltaic device of claim 1, wherein the substrate comprises a flexible substrate.

### Claim 3 (depends on 1)

The photovoltaic device of claim 1, wherein each of the first unit cell and the second unit cell comprises an n-type semiconductor layer, a p-type semiconductor layer, and an intrinsic semiconductor layer disposed between the n-type semiconductor layer and the P-type semiconductor layer.

### Claim 4 (depends on 1)

The photovoltaic device of claim 1, wherein a surface of the p-type semiconductor layer of the second unit cell is textured.

### Claim 5 (depends on 1)

The photovoltaic device of claim 1, wherein an average pitch of a textured surface of the second electrode is equal to or more than 50 nm and equal to or less than 500 nm.

### Claim 6 (depends on 1)

The photovoltaic device of claim 1, further comprising an intermediate reflector located between the first unit cell and the second unit cell, and wherein a thickness of the intermediate reflector is equal to or more than 20 nm and equal to or less than 200 nm.

### Claim 7

A photovoltaic device comprising:
a substrate;
a first electrode disposed on a first surface of the substrate;
a second electrode disposed opposite to the first electrode and on which light is incident; and
a first unit cell disposed between the first electrode and the second electrode, the first unit cell comprising an intrinsic semiconductor layer comprising a mixed phase hydrogenated microcrystalline silicon based material comprising an amorphous silicon based material and crystalline silicon grains, a first surface that is textured by the crystalline silicon grains exposed from a layer of amorphous silicon, and an opposing second surface,
wherein an average crystal volume fraction of the intrinsic semiconductor layer of the first unit cell is equal to or greater than 25% and equal to or less than 75%,
wherein the amorphous silicon based material at least partially covers the crystalline silicon grains, and
wherein the second surface of the intrinsic semiconductor layer and the first surface of the substrate are disposed in parallel planes.