# US 9,040,434 B2 · Film deposition method and film deposition apparatus

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- Number: US 9,040,434 B2
- Document ID: US9040434B2
- Status: Granted
- Kind: B2
- Application number: 13/938,310
- Filed: 2013-07-10
- Published: 2014-01-16
- Granted: 2015-05-26
- Earliest claimed: 2012-07-13
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Hitoshi Kato
- Web page: https://patentgrep.com/patent/US9040434B2

## CPC

- H10P 14/6328: {Deposition from the gas or vapour phase}
- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/402: {Silicon dioxide}
- C23C 16/4554: {Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence)}
- C23C 16/45551: {for relative movement of the substrate and the gas injectors or half-reaction reactor compartments}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A film deposition method includes a step of condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide, and a step of supplying a silicon-containing gas reactable with the hydrogen peroxide to the substrate having the hydrogen peroxide condensed thereon.

## Claims

### Claim 1

A film deposition method, comprising steps of:
condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide;
evaporating the hydrogen peroxide condensed on the surface of the substrate and an inner surface on a top side of the concave portion while leaving the hydrogen peroxide condensed on an inner surface on a bottom side and on a bottom surface of the concave portion by supplying an inactive gas to the substrate, after condensing the hydrogen peroxide on the substrate; and
supplying a silicon-containing gas reactable with the hydrogen peroxide condensed on the inner surface on the bottom side and on the bottom surface of the concave portion to the substrate, after evaporating the hydrogen peroxide condensed on the surface of the substrate and the inner surface on the top side of the concave portion.

### Claim 2 (depends on 1)

The film deposition method as claimed in claim 1, wherein the step of condensing the hydrogen peroxide and the step of supplying the silicon-containing gas are alternately repeated a plurality of times.

### Claim 3 (depends on 2)

The film deposition method as claimed in claim 2, further comprising a step of:
supplying the inactive gas to the substrate supplied with the silicon-containing gas, before the step of condensing the hydrogen peroxide.

### Claim 4 (depends on 1)

The film deposition method as claimed in claim 1, further comprising a step of:
maintaining the substrate at a temperature equal to or less than room temperature.

### Claim 5 (depends on 1)

The film deposition method as claimed in claim 1, wherein the silicon-containing gas is a silane gas.