# US 9,040,431 B2 · Method for processing silicon wafer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,431 B2 - Document ID: US9040431B2 - Status: Granted - Kind: B2 - Application number: 13/925,364 - Filed: 2013-06-24 - Published: 2014-01-02 - Granted: 2015-05-26 - Earliest claimed: 2012-06-27 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Hirohisa Fujita; Shuji Koyama; Keiji Matsumoto; Kenta Furusawa - Web page: https://patentgrep.com/patent/US9040431B2 ## CPC - H10P 50/642: {Chemical etching} - H10P 72/0424: {using mainly spraying means, e.g. nozzles} - H10P 50/644: {Anisotropic liquid etching (H10P50/61 takes precedence)} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for processing a silicon wafer is provided. The method includes allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side. The apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant. The first aperture and the second aperture are subjected to different processes after being formed. ## Claims ### Claim 1 A method for processing a silicon wafer, the method comprising: allowing an etchant, which is a liquid, to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side, wherein the apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant, wherein the first aperture and the second aperture are subjected to different processes after being formed, and wherein, among the apertures arranged in the line, each aperture formed downstream of the first aperture in the flow direction of the etchant is subjected to the same process after being formed. ### Claim 2 (depends on 1) The method according to claim 1, wherein the apertures are arranged in a plurality of lines, and in each of the lines in which the apertures are arranged, the apertures include the first aperture formed on the most upstream side and the second aperture formed downstream of the first aperture in the flow direction of the etchant. ### Claim 3 (depends on 1) The method according to claim 1, wherein, in the different processes to which the first aperture and the second aperture are subjected after being formed, the first aperture is not used as a liquid supply port formed in a silicon substrate of a liquid ejection head, and the second aperture is used as a liquid supply port formed in a silicon substrate of a liquid ejection head. ### Claim 4 (depends on 1) The method according to claim 1, further comprising, in the different processes to which the first aperture and the second aperture are subjected after being formed, determining whether or not the first aperture is used as a liquid supply port formed in a silicon substrate of a liquid ejection head, and not determining whether or not the second aperture is used as a liquid supply port formed in a silicon substrate of a liquid ejection head. ### Claim 5 (depends on 1) The method according to claim 1, wherein the first aperture does not penetrate through a silicon wafer. ### Claim 6 (depends on 1) The method according to claim 1, wherein each of the first aperture and the second aperture has a rectangular shape, and the longitudinal directions of the rectangular shapes of the first and second apertures are substantially parallel to each other. ### Claim 7 (depends on 1) The method according to claim 1, wherein each of the apertures arranged in the line has a rectangular shape, and the longitudinal directions of the rectangular shapes of the apertures are substantially parallel to each other. ### Claim 8 (depends on 1) The method according to claim 1, wherein the first aperture and the second aperture have substantially the same width in a direction perpendicular to a flow direction of the etchant. ### Claim 9 (depends on 1) The method according to claim 1, wherein each of the apertures arranged in the line has substantially the same width in a direction perpendicular to the flow direction of the etchant. ### Claim 10 A method for processing a silicon wafer, the method comprising: allowing an etchant, which is a liquid, to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side, wherein the apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant, wherein the first aperture and the second aperture are subjected to different processes after being formed, and wherein, among the apertures arranged in the line, each aperture formed downstream of the first aperture is to be used as a liquid supply port formed in a silicon substrate of a liquid ejection head, and the first aperture is not to be used as a liquid supply port formed in a silicon substrate of a liquid ejection head but to be used as a dummy aperture of the liquid supply port. ### Claim 11 (depends on 10) The method according to claim 10, wherein the apertures are arranged in a plurality of lines, and in each of the lines in which the apertures are arranged, the apertures include the first aperture formed on the most upstream side and the second aperture formed downstream of the first aperture in the flow direction of the etchant. ### Claim 12 (depends on 10) The method according to claim 10, wherein, in the different processes to which the first aperture and the second aperture are subjected after being formed, the first aperture is not used as a liquid supply port formed in a silicon substrate of a liquid ejection head, and the second aperture is used as a liquid supply port formed in a silicon substrate of a liquid ejection head. ### Claim 13 (depends on 10) The method according to claim 10, further comprising, in the different processes to which the first aperture and the second aperture are subjected after being formed, determining whether or not the first aperture is used as a liquid supply port formed in a silicon substrate of a liquid ejection head, and not determining whether or not the second aperture is used as a liquid supply port formed in a silicon substrate of a liquid ejection head. ### Claim 14 (depends on 10) The method according to claim 10, wherein the first aperture does not penetrate through a silicon wafer. ### Claim 15 (depends on 10) The method according to claim 10, wherein each of the first aperture and the second aperture has a rectangular shape, and the longitudinal directions of the rectangular shapes of the first and second apertures are substantially parallel to each other. ### Claim 16 (depends on 10) The method according to claim 10, wherein each of the apertures arranged in the line has a rectangular shape, and the longitudinal directions of the rectangular shapes of the apertures are substantially parallel to each other. ### Claim 17 (depends on 10) The method according to claim 10, wherein the first aperture and the second aperture have substantially the same width in a direction perpendicular to a flow direction of the etchant. ### Claim 18 (depends on 10) The method according to claim 10, wherein each of the apertures arranged in the line has substantially the same width in a direction perpendicular to the flow direction of the etchant.