# US 9,040,429 B2 · Pattern formation method

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- Number: US 9,040,429 B2
- Document ID: US9040429B2
- Status: Granted
- Kind: B2
- Application number: 13/784,648
- Filed: 2013-03-04
- Published: 2014-03-27
- Granted: 2015-05-26
- Earliest claimed: 2012-09-21
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Hirokazu Kato; Ayako Kawanishi
- Web page: https://patentgrep.com/patent/US9040429B2

## CPC

- H10P 76/4085: {characterised by the processes involved to create the masks}
- B81C 1/00031: {Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002)}
- B81C 2201/0149: Forming nanoscale microstructures using auto-arranging or self-assembling material
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)

## Abstract

A pattern formation method comprises a process of forming a resist pattern with an opening that exposes a first region of a glass film arranged on a substrate through a base film; a process of forming a neutralization film above the glass film; a process of forming a directed self-assembly material layer containing a first segment and a second segment above the glass film; a process of microphase separating the directed self-assembly material layer to form a directed self-assembly pattern containing a first part that includes the first segment and a second part that includes the second segment; and a process of removing either the first part or the second part and using the other as a mask to process the base film.

## Claims

### Claim 1

A pattern formation method, comprising:
forming a first layer on a substrate;
forming a second layer on the first layer;
forming a resist pattern on the second layer in a line and space pattern, the space pattern having openings that expose a portion of the second layer;
removing the resist pattern to form a first region and a second region on the second layer, wherein the first region has a greater hydrophobicity than the second region;
forming a neutralization film on the second layer;
removing the neutralization film;
forming a directed self-assembly material layer containing a first segment and a second segment on the second layer after the neutralization film is removed;
microphase separating the directed self-assembly material layer to form a self-assembled pattern containing a first polymer part that includes the first segment and a second polymer part that includes the second segment; and
removing either the first polymer part or the second polymer part, using the other as a mask to process the first layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein removing the resist pattern comprises oxidizing the resist pattern.

### Claim 3 (depends on 2)

The method of claim 2, wherein removing the resist pattern comprises exposing the resist pattern and the second layer to oxygen plasma.

### Claim 4 (depends on 2)

The method of claim 2, wherein removing the resist pattern comprises exposing the resist pattern to ozonated water.

### Claim 5 (depends on 2)

The method of claim 2, wherein removing the resist pattern comprises exposing the resist pattern to light in the vacuum-ultraviolet wavelength.

### Claim 6 (depends on 1)

The method of claim 1, wherein removing the resist pattern comprises exposing the resist pattern to a solvent.

### Claim 7 (depends on 1)

The method of claim 1, wherein the neutralization film alters the hydrophobicity of the first region.

### Claim 8 (depends on 7)

The method of claim 7, wherein the neutralization film alters the hydrophobicity of the second region.

### Claim 9 (depends on 8)

The method of claim 8, wherein the neutralization film increases the hydrophobicity of the second region.

### Claim 10

A pattern formation method, comprising:
forming a first film on a substrate;
forming a second film on the first film;
forming resist pattern on the second film, the resist pattern having a line-and-space pattern, wherein a line width is narrower than a space width;
removing the resist pattern to form a first region and a second region on the second film, each of the first region and the second region having different hydrophobic properties;
forming a neutralization film on the second layer;
removing the neutralization film;
forming a directed self-assembly material layer containing a first segment and a second segment on the line and space pattern after the neutralization film is removed;
microphase separating the directed self-assembly material layer to form a pattern containing a first part that includes the first segment and a second part that includes the second segment; and
removing either the first part or second part and using the other as a mask to process the first film.

### Claim 11 (depends on 10)

The method of claim 10, wherein removing the resist pattern comprises oxidizing the resist pattern.

### Claim 12 (depends on 11)

The method of claim 11, wherein removing the resist pattern comprises exposing the resist pattern to ozonated water.

### Claim 13 (depends on 11)

The method of claim 11, wherein removing the resist pattern comprises exposing the resist pattern to light in the vacuum-ultraviolet wavelength.

### Claim 14 (depends on 11)

The method of claim 11, wherein removing the resist pattern comprises exposing the resist pattern and the second layer to oxygen plasma.

### Claim 15 (depends on 14)

The method of claim 14, wherein the first region corresponds to the space pattern and the second region corresponds to the line pattern, and after removal of the resist pattern, the area of the second region is reduced.

### Claim 16 (depends on 10)

The method of claim 10, wherein the neutralization film alters the hydrophobicity of the first region.

### Claim 17 (depends on 16)

The method of claim 16, wherein the neutralization film alters the hydrophobicity of the second region.

### Claim 18

A pattern formation method, comprising:
forming a base film on a substrate;
forming a spin on glass film on the base film;
forming a resist pattern having openings that expose a first region of the glass film;
removing the resist pattern to form second regions adjacent the first region;
forming a neutralization film on the second layer;
removing the neutralization film;
forming a directed self-assembly material layer on the glass film, the directed self assembly material layer containing a first segment and a second segment;
microphase separating the directed self-assembly material layer to form a directed self-assembly pattern containing a first part that includes the first segment and a second part that includes the second segment; and
removing either the first part or the second part and using the other as a mask to process the base film,
wherein:
the first region has a greater hydrophobicity than the second regions.

### Claim 19 (depends on 18)

The method of claim 18, wherein the neutralization film alters the hydrophobicity of the first region.