# US 9,040,423 B2 · Method for manufacturing semiconductor device

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- Number: US 9,040,423 B2
- Document ID: US9040423B2
- Status: Granted
- Kind: B2
- Application number: 13/943,900
- Filed: 2013-07-17
- Published: 2015-01-22
- Granted: 2015-05-26
- Earliest claimed: 2013-07-17
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Wan-Fang Chung; Ping-Chia Shih; Hsiang-Chen Lee; Che-Hao Chang; Jhih-Long Lin; Wei-Pin Huang; Shao-Nung Huang; Yu-Cheng Wang; Jaw-Jiun Tu; Chung-Che Huang
- Web page: https://patentgrep.com/patent/US9040423B2

## CPC

- H10P 50/00: Etching of wafers, substrates or parts of devices
- H10B 41/43: comprising only one type of peripheral transistor
- H10D 30/0411: {of FETs having floating gates}
- H10P 50/282: {of inorganic materials}
- H10P 50/642: {Chemical etching}
- H10P 50/71: {using masks for conductive or resistive materials}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first area and above the second poly layer in the second area. Afterwards, a first patterned passivation is formed on the nitride HM film in the first area to cover the nitride HM film and the first device, and a second patterned passivation is formed above the second poly layer in the second area. The second poly layer in the second area is defined by the second patterned passivation.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, comprising:
providing a substrate having a first area with a first poly layer and a second area with a second poly layer;
forming an oxide hard mask film on the first device in the first area and the second poly layer in the second area;
depositing a nitride hard mask film above the oxide hard mask film on the first poly layer of a first device in the first area and above the second poly layer in the second area;
removing the nitride hard mask film in the second area;
forming a first patterned passivation on the nitride hard mask film in the first area to cover the nitride hard mask film and the first device, and forming a second patterned passivation directly on the oxide hard mask film above the second poly layer in the second area; and
defining the second poly layer in the second area by the second patterned passivation.

### Claim 2 (depends on 1)

The method according to claim 1, wherein steps of defining the second poly layer comprises:
etching the oxide hard mask film in the second area by the second patterned passivation to form a patterned oxide hard mask;
removing the first patterned passivation and the second patterned passivation;
removing the nitride hard mask film in the first area;
etching the second poly layer in the second area by the patterned oxide hard mask; and
removing the patterned oxide hard mask.

### Claim 3 (depends on 1)

The method according to claim 1, wherein steps of defining the second poly layer comprises:
etching the oxide hard mask film in the second area by the second patterned passivation to form a patterned oxide hard mask in the second area;
etching the second poly layer in the second area by a stack of the second patterned passivation and the patterned oxide hard mask to form a patterned second poly;
removing the first patterned passivation and the second patterned passivation;
removing the nitride hard mask film in the first area; and
removing the oxide hard mask film in the first area and the patterned oxide hard mask in the second area.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the first poly layer and the second poly layer have different heights.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the first and second patterned passivations are formed simultaneously.

### Claim 6 (depends on 1)

The method according to claim 1, wherein each of the first and second patterned passivations is a patterned photo-resist.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the nitride hard mask film comprises SiN, SiCN, or a combination thereof.

### Claim 8 (depends on 1)

The method according to claim 1, wherein steps before forming the first and second patterned passivations further comprising:
forming a first patterned bottom anti-reflective coating layer on the nitride hard mask film in the first area; and
forming a first patterned photo-resist on the first patterned bottom anti-reflective coating layer in the first area.

### Claim 9 (depends on 8)

The method according to claim 8, further comprising:
removing the first patterned photo-resist and the first patterned bottom anti-reflective coating layer.

### Claim 10 (depends on 1)

The method according to claim 1, wherein each of the first and second patterned passivations is a patterned photo-resist stacked on a patterned bottom anti-reflective coating layer.

### Claim 11 (depends on 10)

The method according to claim 10, wherein a top surface of the patterned bottom anti-reflective coating layer is lower than a top surface of the nitride hard mask film in the first area.

### Claim 12 (depends on 10)

The method according to claim 10, wherein a top surface of the patterned bottom anti-reflective coating layer is higher than a top surface of the nitride hard mask film in the first area.

### Claim 13 (depends on 10)

The method according to claim 10, wherein a top surface of the patterned bottom anti-reflective coating layer is substantially aligned to a top surface of the nitride hard mask film in the first area.