# US 9,040,420 B2 · Manufacturing method of semiconductor device including peeling layers from substrates by etching > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,420 B2 - Document ID: US9040420B2 - Status: Granted - Kind: B2 - Application number: 11/276,349 - Filed: 2006-02-24 - Published: 2006-09-07 - Granted: 2015-05-26 - Earliest claimed: 2005-03-01 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Eiji Sugiyama; Yoshitaka Dozen; Yumiko Fukumoto; Hideaki Kuwabara; Shunpei Yamazaki - Inventors: Eiji Sugiyama; Yoshitaka Dozen; Yumiko Fukumoto; Hideaki Kuwabara; Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US9040420B2 ## CPC - H10P 95/11: {Separation of active layers from substrates} - H10D 86/0214: {using temporary substrates} - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - H10P 50/283: {by chemical means} - H10P 72/0424: {using mainly spraying means, e.g. nozzles} - H10P 72/0442: {Apparatus for placing on an insulating substrate, e.g. tape} - H10D 86/021: {of multiple TFTs} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer. ## Claims ### Claim 1 A manufacturing method of a semiconductor device, comprising: forming a peeling layer over a substrate having an insulating surface; forming a layer to be peeled including a plurality of thin film integrated circuits over the peeling layer; and peeling the layer to be peeled provided over the peeling layer from the substrate by applying a force to the layer to be peeled in an atmosphere of an etching gas that generates a chemical reaction with the peeling layer, wherein a nozzle is used to blow the etching gas to the peeling layer and the peeling layer is exposed to the atmosphere of the etching gas prior to blowing the etching gas by the nozzle. ### Claim 2 (depends on 1) The manufacturing method of a semiconductor device according to claim 1, wherein the peeling layer is a single layer formed of an element selected from Si, W, Ti, Ta, Mo, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, or Ir, or an alloy material or a compound material containing the element as its main component. ### Claim 3 (depends on 1) The manufacturing method of a semiconductor device according to claim 1, wherein the plurality of thin film integrated circuits includes an antenna. ### Claim 4 (depends on 1) The manufacturing method of a semiconductor device according to claim 1, wherein the plurality of thin film integrated circuits includes a central processing unit. ### Claim 5 (depends on 1) The manufacturing method of a semiconductor device according to claim 1, wherein the force is applied by an apparatus. ### Claim 6 (depends on 1) The manufacturing method of a semiconductor device according to claim 1, wherein the substrate is pressed by the nozzle when applying the force to the layer to be peeled. ### Claim 7 (depends on 6) The manufacturing method of a semiconductor device according to claim 6, wherein the nozzle blows the etching gas and fastens the substrate so that the substrate does not move in accordance with the layer to be peeled. ### Claim 8 (depends on 6) The manufacturing method of a semiconductor device according to claim 6, wherein the nozzle blows the etching gas and fastens the substrate so that the substrate does not move in accordance with the layer to be peeled when the layer to be peeled is pulled. ### Claim 9 (depends on 1) The manufacturing method of a semiconductor device according to claim 1, wherein the layer to be peeled is pulled by a chuck portion coupled to an elevator mechanism while supplying the etching gas. ### Claim 10 A manufacturing method of a semiconductor device, comprising: forming a peeling layer over a substrate having an insulating surface; forming a layer to be peeled including a plurality of thin film integrated circuits over the peeling layer; forming an opening portion in a portion of the layer to be peeled; and peeling the layer to be peeled having the opening portion provided over the peeling layer from the substrate by applying a force to the layer to be peeled in an atmosphere of an etching gas that generates a chemical reaction with the peeling layer, wherein a nozzle is used to blow the etching gas to the peeling layer and the peeling layer is exposed to the atmosphere of the etching gas prior to blowing the etching gas by the nozzle. ### Claim 11 (depends on 10) The manufacturing method of a semiconductor device according to claim 10, wherein the peeling layer is a single layer formed of an element selected from Si, W, Ti, Ta, Mo, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, or Ir, or an alloy material or a compound material containing the element as its main component. ### Claim 12 (depends on 10) The manufacturing method of a semiconductor device according to claim 10, wherein the opening portion is formed by etching or laser ablation. ### Claim 13 (depends on 10) The manufacturing method of a semiconductor device according to claim 10, wherein the plurality of thin film integrated circuits includes an antenna. ### Claim 14 (depends on 10) The manufacturing method of a semiconductor device according to claim 10, wherein the plurality of thin film integrated circuits includes a central processing unit. ### Claim 15 (depends on 10) The manufacturing method of a semiconductor device according to claim 10, wherein the force is applied by an apparatus. ### Claim 16 (depends on 10) The manufacturing method of a semiconductor device according to claim 10, wherein the substrate is pressed by the nozzle when applying the force to the layer to be peeled. ### Claim 17 (depends on 16) The manufacturing method of a semiconductor device according to claim 16, wherein the nozzle blows the etching gas and fastens the substrate so that the substrate does not move in accordance with the layer to be peeled. ### Claim 18 (depends on 16) The manufacturing method of a semiconductor device according to claim 16, wherein the nozzle blows the etching gas and fastens the substrate so that the substrate does not move in accordance with the layer to be peeled when the layer to be peeled is pulled. ### Claim 19 (depends on 10) The manufacturing method of a semiconductor device according to claim 10, wherein the layer to be peeled is pulled by a chuck portion coupled to an elevator mechanism while supplying the etching gas. ### Claim 20 A manufacturing method of a semiconductor device, comprising: forming a peeling layer over a substrate having an insulating surface; forming a layer to be peeled including a plurality of thin film integrated circuits including a thin film transistor over the peeling layer; and peeling the layer to be peeled provided over the peeling layer from the substrate by applying a force to the layer to be peeled in an atmosphere of an etching gas that generates a chemical reaction with the peeling layer, wherein a nozzle is used to blow the etching gas to the peeling layer and the peeling layer is exposed to the atmosphere of the etching gas prior to blowing the etching gas by the nozzle. ### Claim 21 (depends on 20) The manufacturing method of a semiconductor device according to claim 20, wherein the peeling layer is a single layer formed of an element selected from Si, W, Ti, Ta, Mo, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, or Ir, or an alloy material or a compound material containing the element as its main component. ### Claim 22 (depends on 20) The manufacturing method of a semiconductor device according to claim 20, wherein the plurality of thin film integrated circuits includes an antenna. ### Claim 23 (depends on 20) The manufacturing method of a semiconductor device according to claim 20, wherein the plurality of thin film integrated circuits includes a central processing unit. ### Claim 24 (depends on 20) The manufacturing method of a semiconductor device according to claim 20, wherein the force is applied by an apparatus. ### Claim 25 (depends on 20) The manufacturing method of a semiconductor device according to claim 20, wherein the substrate is pressed by a nozzle when applying the force to the layer to be peeled. ### Claim 26 (depends on 25) The manufacturing method of a semiconductor device according to claim 25, wherein the nozzle blows the etching gas and fastens the substrate so that the substrate does not move in accordance with the layer to be peeled. ### Claim 27 (depends on 25) The manufacturing method of a semiconductor device according to claim 25, wherein the nozzle blows the etching gas and fastens the substrate so that the substrate does not move in accordance with the layer to be peeled when the layer to be peeled is pulled. ### Claim 28 (depends on 20) The manufacturing method of a semiconductor device according to claim 20, wherein the layer to be peeled is pulled by a chuck portion coupled to an elevator mechanism while supplying the etching gas.