# US 9,040,411 B2 · Advanced low k cap film formation process for nano electronic devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,411 B2 - Document ID: US9040411B2 - Status: Granted - Kind: B2 - Application number: 14/194,036 - Filed: 2014-02-28 - Published: 2014-06-26 - Granted: 2015-05-26 - Earliest claimed: 2008-01-10 - Assignees: International Business Machines Corporation; Globalfoundries Inc. - Applicants: International Business Machines Corporation; Globalfoundries, Inc. - Inventors: Alfred Grill; Joshua L. Herman; Son Nguyen; E. Todd Ryan; Hosadurga K. Shobha - Web page: https://patentgrep.com/patent/US9040411B2 ## CPC - H10P 14/6328: {Deposition from the gas or vapour phase} - C23C 16/325: {Silicon carbide} - C23C 16/56: After-treatment - H10W 20/074: {of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers} - H10W 20/075: {of multilayered thin functional dielectric layers} - H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)} - H10W 20/095: {by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096)} - H10W 20/096: {by contacting with gases, liquids or plasmas} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. ## Claims ### Claim 1 A method of forming a dielectric film comprising: providing at least a carbon-rich carbosilane precursor into a reactor chamber; and depositing a dielectric film consisting of atoms of Si, C and H or Si, C, H and nitrogen and having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a surface of a substrate, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C. ### Claim 2 (depends on 1) The method of claim 1 wherein said nitrogen is present in said dielectric film in a concentration of less than, or equal, to about 5 atomic % nitrogen. ### Claim 3 (depends on 1) The method of claim 1 wherein said nitrogen is provided by utilizing a nitrogen-containing second precursor. ### Claim 4 (depends on 1) The method of claim 1 wherein said reactor chamber is a reactor chamber of a plasma enhanced chemical vapor deposition apparatus. ### Claim 5 (depends on 1) The method of claim 1 wherein said carbon-rich carbosilane precursor comprises a compound of the general formula CxSiHy where x>=3 and y>=8. ### Claim 6 (depends on 1) The method of claim 1 wherein said carbon-rich carbosilane precursor comprises dimethylsilacyclopentene and wherein a nitrogen-containing precursor comprising NH3 is employed. ### Claim 7 (depends on 1) The method of claim 1 further comprising performing a post deposition treatment on said dielectric film, wherein after said post deposition treatment said dielectric film remains compressively stressed. ### Claim 8 (depends on 1) The method of claim 1 wherein said nitrogen is uniformly distributed throughout said dielectric film. ### Claim 9 (depends on 1) The method of claim 1 wherein said nitrogen is present in selected regions within said dielectric film providing a nitrogen-graded dielectric film. ### Claim 10 (depends on 1) The method of claim 1 wherein said substrate is a Cu surface. ### Claim 11 (depends on 10) The method of claim 10 further comprising forming a layer of SiNH or SiNCH between the Cu surface and said dielectric film. ### Claim 12 (depends on 1) The method of claim 1 wherein said carbon-rich carbosilane precursor includes a 3:1 or greater ratio of C to Si atoms. ### Claim 13 (depends on 1) The method of claim 1 wherein said carbon-rich carbosilane precursor includes a 5:1 or greater ratio of C to Si atoms. ### Claim 14 A method of forming a dielectric film comprising: providing at least a carbon-rich carbosilane precursor into a reactor chamber, said carbon rich carbosilane precursor includes a 3:1 or greater ratio of C to Si atoms; depositing a dielectric film consisting of atoms of Si, C and H or Si, C, H and nitrogen and having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a Cu surface, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C; and performing a post deposition treatment on said dielectric film, wherein after said post deposition treatment said dielectric film remains compressively stressed. ### Claim 15 (depends on 14) The method of claim 14 further comprising forming a layer of SiNH or SiNCH between the Cu surface and said dielectric film. ### Claim 16 (depends on 14) The method of claim 14 wherein said nitrogen is present in said dielectric film in a concentration of less than, or equal, to about 5 atomic % nitrogen. ### Claim 17 (depends on 16) The method of claim 16 wherein said nitrogen is uniformly distributed throughout said dielectric film. ### Claim 18 (depends on 16) The method of claim 16 wherein said nitrogen is present in selected regions within said dielectric film providing a nitrogen-graded dielectric film. ### Claim 19 A method of forming a dielectric film comprising: providing at least a carbon-rich carbosilane precursor into a reactor chamber; and depositing a dielectric film comprising atoms of Si, C, H and nitrogen and having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a surface of a substrate, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and said nitrogen is uniformly distributed throughout the dielectric film.