# US 9,040,410 B2 · Fabrication method for semiconductor device and semiconductor device

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- Number: US 9,040,410 B2
- Document ID: US9040410B2
- Status: Granted
- Kind: B2
- Application number: 14/130,482
- Filed: 2013-05-10
- Published: 2014-05-29
- Granted: 2015-05-26
- Earliest claimed: 2012-05-15
- Assignees: Csmc Technologies Fab2 Co., Ltd.
- Applicants: CSMC Technologies Fab2 Co., Ltd.
- Inventors: Xin Yang
- Web page: https://patentgrep.com/patent/US9040410B2

## CPC

- H10W 46/00: Marks applied to devices, e.g. for alignment or identification
- G03F 7/20: Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00)
- G03F 9/708: {Mark formation}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10W 46/401: {for identification or tracking}
- H10W 46/501: {for use before dicing}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A fabrication method for semiconductor devices is provided. The method comprises: depositing a dielectric layer that includes a plurality of functional layers, and forming a contact hole, or through hole, and a metal layer. The forming of the contact hole, or through hole, and the metal layer comprises performing photolithography on regions corresponding to a marking label for the photolithography of the dielectric layer and the metal layer. On at least one of the functional layers, the performing photolithography on regions corresponding to a marking label for the photolithography comprises limiting the photolithography to the metal layer thereof. A semiconductor device thus fabricated is also provided. The method and device do not affect the reading of the marking label, and also can avoid the problem of defocusing in the vicinity of the marking label.

## Claims

### Claim 1

A fabrication method for semiconductor devices, comprising:
providing a substrate that includes at least one marking label on a primary surface of the substrate;
depositing a plurality of functional layers over the primary surface of the substrate, each functional layer of the plurality of functional layers respectively comprising a dielectric layer and a metal layer disposed on the dielectric layer; and
performing photolithography on regions of each of at least two functional layers of the plurality of functional layers corresponding to the at least one marking label.

### Claim 2 (depends on 1)

The fabrication method for semiconductor devices of claim 1, wherein performing the photolithography on regions of each of at least two functional layers of the plurality of functional layers corresponding to the at least one marking label comprises performing the photolithography on regions of at least an outermost layer and a neighboring layer of the plurality of functional layers corresponding to the at least one marking label.

### Claim 3

A semiconductor device, comprising:
a silicon substrate having at least one marking label on a primary surface of the silicon substrate;
a silicon oxide layer on the primary surface of the silicon substrate;
a metal layer on the silicon oxide layer;
a plurality of functional layers on the metal layer, each of the plurality of functional layers respectively including a dielectric layer and a metal layer that are sequentially stacked,
wherein a region of the metal layer of at least one of the plurality of functional layers corresponding to the at least one marking label is photoetched by photolithography.

### Claim 4 (depends on 3)

The semiconductor device of claim 3, wherein the at least one of the plurality of functional layers comprises at least an outermost layer and a neighboring layer of the plurality of functional layers.

### Claim 5 (depends on 1)

The fabrication method for semiconductor devices of claim 1, wherein performing the photolithography on regions of each of at least two functional layers of the plurality of functional layers corresponding to the at least one marking label comprises performing the photolithography on regions of the respective metal layer of at least two functional layers of the plurality of functional layers corresponding to the marking label.

### Claim 6 (depends on 1)

The fabrication method for semiconductor devices of claim 1, wherein performing the photolithography on regions of each of at least two functional layers of the plurality of functional layers corresponding to the at least one marking label comprises performing the photolithography on regions of a first functional layer and a second functional layer of the plurality of functional layers corresponding to the marking label, and wherein a third functional layer of the plurality of functional layers is sandwiched between the first functional layer and the second functional layer.

### Claim 7 (depends on 1)

The fabrication method for semiconductor devices of claim 1, wherein the at least one marking label comprises a plurality of marking labels disposed around an outer rim on the primary surface of the wafer.

### Claim 8 (depends on 3)

The semiconductor device of claim 3, wherein regions of each of at least two functional layers of the plurality of functional layers corresponding to the at least one marking label are photoetched.

### Claim 9 (depends on 3)

The semiconductor devices of claim 3, wherein regions of the respective metal layer of at least two functional layers of the plurality of functional layers corresponding to the marking label are photoetched.

### Claim 10 (depends on 3)

The semiconductor devices of claim 3, wherein regions of a first functional layer and a second functional layer of the plurality of functional layers corresponding to the marking label are photoetched, and wherein a third functional layer of the plurality of functional layers is sandwiched between the first functional layer and the second functional layer.

### Claim 11 (depends on 3)

The semiconductor devices of claim 3, wherein the at least one marking label comprises a plurality of marking labels disposed around an outer rim on the primary surface of the wafer.