# US 9,040,405 B2 · Gate electrode with a shrink spacer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,405 B2 - Document ID: US9040405B2 - Status: Granted - Kind: B2 - Application number: 14/043,181 - Filed: 2013-10-01 - Published: 2015-04-02 - Granted: 2015-05-26 - Earliest claimed: 2013-10-01 - Assignees: Globalfoundries Inc. - Applicants: GLOBALFOUNDRIES Inc. - Inventors: Tom Hasche; Sven Beyer; Gerhard Lembach; Alexander Ebermann - Web page: https://patentgrep.com/patent/US9040405B2 ## CPC - H10D 64/01326: {Aspects related to lithography, isolation or planarisation of the conductor} - H10D 84/0135: {Manufacturing their gate conductors} - H10D 84/0147: {Manufacturing their gate sidewall spacers} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10P 50/71: {using masks for conductive or resistive materials} - H10P 76/4085: {characterised by the processes involved to create the masks} - Y10S 438/942: Masking - Y10S 438/947: Subphotolithographic processing - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract A method of forming a semiconductor device including forming a dielectric material layer on a semiconductor layer, forming a gate electrode material layer on the dielectric material layer, forming mask features on the gate electrode material layer, forming a spacer layer on and at sidewalls of the mask features and on the gate electrode material layer between the mask features, removing the spacer layer from the gate electrode material layer between the mask features, and etching the gate electrode material layer and dielectric material layer using the hard mask features as an etch mask to obtain gate electrode structures. A semiconductor device including first and second gate electrode structures, each covered by a cap layer that comprises a mask material surrounded at the sidewalls thereof by a spacer material different from the mask material, and the distance between the first and second electrode structures is at most 100 nm. ## Claims ### Claim 1 A method of forming a semiconductor device, comprising: forming a dielectric material layer on a semiconductor layer; forming a gate electrode material layer on said dielectric material layer; forming mask features on said gate electrode material layer, wherein forming said mask features includes performing a first lithography process so as to define a gate length and performing a second lithography process so as to define a preliminary lateral distance between said gate electrode structures, said first lithography process including: forming a mask layer on said gate electrode material layer; forming a first resist layer on said mask layer and patterning said first resist layer; forming a patterned mask layer based on said patterned first resist layer; forming a second resist layer on said patterned mask layer and patterning said second resist layer; and etching said patterned mask layer based on said patterned second resist layer to obtain said mask features; forming a spacer layer on said mask features and at sidewalls of said mask features and on said gate electrode material layer between said mask features; removing a portion of said spacer layer from said gate electrode material layer between said mask features to define spacers on said gate electrode material between said mask features, and etching said gate electrode material layer and said dielectric material layer using said mask features and said spacers as an etch mask to obtain gate electrode structures. ### Claim 2 (depends on 1) The method of claim 1, wherein forming said spacer layer is performed by atomic layer deposition. ### Claim 3 (depends on 1) The method of claim 1, wherein said spacer layer comprises nitride. ### Claim 4 (depends on 1) The method of claim 1, wherein said spacer layer is a strained layer. ### Claim 5 (depends on 1) The method of claim 1, wherein said mask features comprise at least one of silicon dioxide and silicon nitride. ### Claim 6 (depends on 1) The method of claim 1, wherein said dielectric layer comprises a high-k dielectric material. ### Claim 7 (depends on 1) The method of claim 1, wherein forming said gate electrode material layer comprises forming a polysilicon layer and forming a metal layer above said polysilicon layer. ### Claim 8 (depends on 1) The method of claim 1, further comprising forming a strained layer on at least one of said gate electrode structures. ### Claim 9 A method of forming a semiconductor device, comprising: forming a dielectric material layer on a semiconductor layer; forming a gate electrode material layer on said dielectric material layer; forming mask features on said gate electrode material layer by: forming a mask layer on said gate electrode material layer by forming a first oxide layer on said gate electrode material layer, a nitride layer on said first oxide layer and a second oxide layer on said nitride layer; forming a first resist layer on said second oxide layer and patterning said first resist layer; forming a patterned mask layer based on said patterned first resist layer; forming a second resist layer on said patterned mask layer and patterning said second resist layer; and etching said patterned mask layer based on said patterned second resist layer to obtain said mask features; forming a spacer layer on said mask features and at sidewalls of said mask features and on said gate electrode material layer between said mask features; removing a portion of said spacer layer from said gate electrode material layer between said mask features to define spacers on said gate electrode material between said mask features, and etching said gate electrode material layer and said dielectric material layer using said mask features and said spacers as an etch mask to obtain gate electrode structures. ### Claim 10 (depends on 9) The method of claim 9, wherein forming said spacer layer is performed by atomic layer deposition. ### Claim 11 (depends on 9) The method of claim 9, wherein said spacer layer comprises nitride. ### Claim 12 (depends on 9) The method of claim 9, wherein said spacer layer is a strained layer. ### Claim 13 (depends on 9) The method of claim 9, wherein said mask features comprise at least one of silicon dioxide and silicon nitride. ### Claim 14 (depends on 9) The method of claim 9, wherein said dielectric layer comprises a high-k dielectric material. ### Claim 15 (depends on 9) The method of claim 9, wherein forming said gate electrode material layer comprises forming a polysilicon layer and forming a metal layer above said polysilicon layer. ### Claim 16 (depends on 9) The method of claim 9, further comprising forming a strained layer on at least one of said gate electrode structures.