# US 9,040,401 B1 · Method for forming patterned doping regions

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- Number: US 9,040,401 B1
- Document ID: US9040401B1
- Status: Granted
- Kind: B1
- Application number: 14/626,675
- Filed: 2015-02-19
- Published: 2015-06-11
- Granted: 2015-05-26
- Earliest claimed: 2012-09-26
- Assignees: Industrial Technology Research Institute
- Applicants: Industrial Technology Research Institute
- Inventors: Wen-Ching Sun; Sheng-Min Yu; Tai-Jui Wang; Tzer-Shen Lin
- Web page: https://patentgrep.com/patent/US9040401B1

## CPC

- H10P 32/14: within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/128: {Annealing}
- H10P 32/00: Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00)
- H10P 32/141: {the applied layer comprising oxides only}
- H10P 32/171: {being group IV material}
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

## Claims

### Claim 1

A method for forming doping regions, comprising:
providing a substrate;
forming a doping material on the substrate;
forming at least one patterned covering layer on a portion of the surface of the doping material, wherein the portion of the doping material is covered by the at least one patterned covering layer, and another portion of the doping material not covered by the at least one patterned covering layer is exposed; and
performing a thermal diffusion process to diffuse the doping material into the substrate, forming a first doping region in a portion of the substrate underlying the at least one patterned covering layer and forming a second doping region in a portion of the substrate not covered by the at least one patterned covering layer, wherein the doping concentration of the first doping region is greater than the doping concentration of the second doping region.

### Claim 2 (depends on 1)

The method for forming doping regions as claimed in claim 1, wherein the at least one patterned covering layer is SiNx or Al2O3.

### Claim 3 (depends on 1)

The method for forming doping regions as claimed in claim 1, wherein the doping material is a boride, aluminide, gallide, phosphide, arsenide, or telluride.

### Claim 4 (depends on 3)

The method for forming doping regions as claimed in claim 3, wherein the step of forming the doping material on the substrate comprises:
coating a doping material on a substrate; and
performing a thermal process for the doping material to convert to a solid-state compound.

### Claim 5 (depends on 1)

The method for forming doping regions as claimed in claim 1, wherein the step of forming the at least one patterned covering layer comprises screen printing or spray coating.