# US 9,040,397 B2 · Method of making graphene layers, and articles made thereby

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- Number: US 9,040,397 B2
- Document ID: US9040397B2
- Status: Granted
- Kind: B2
- Application number: 13/278,344
- Filed: 2011-10-21
- Published: 2013-04-25
- Granted: 2015-05-26
- Earliest claimed: 2011-10-21
- Assignees: LGS Innovations LLC
- Applicants: Ashok J. Maliakal
- Inventors: Ashok J. Maliakal
- Web page: https://patentgrep.com/patent/US9040397B2

## CPC

- H10P 14/3406: {Carbon, e.g. diamond-like carbon}
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- C01B 32/184: Preparation
- H10P 14/26: using liquid deposition
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3442: {N-type}
- H10P 14/3444: {P-type}
- H10P 14/38: {characterised by treatments done after the formation of the materials}
- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10D 62/882: {Graphene}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

There is provided a method for forming a graphene layer. The method includes forming an article that comprises a carbon-containing self-assembled monolayer (SAM). A layer of nickel is deposited on the SAM. The article is heated in a reducing atmosphere and coolded. The heating and cooling steps are carried out so as to convert the SAM to a graphene layer.

## Claims

### Claim 1

A method, comprising:
forming an article that comprises a carbon-containing self-assembled monolayer (SAM);
depositing a layer of nickel on the SAM;
heating the article in a reducing atmosphere; and
cooling the article, wherein
the heating and cooling steps are carried out so as to convert the SAM to a graphene layer,
the forming step comprises depositing at least one amphiphilic compound on a substrate including silicon dioxide,
the amphiphilic compound comprises a tail group and a head group,
the tail group comprises a hydrocarbon moiety including at least one aliphatic chain, and
the head group comprises at least one species which is a thiol, a disulfide, a xanthate, a thiocarbamate, a carboxylic acid, a silyl ester, or a phosphonate, and the head group comprises a moiety that adheres to the substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the head group adheres to the substrate by covalent bonding.

### Claim 3 (depends on 1)

The method of claim 1, further comprising removing the substrate from the graphene layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the nickel is deposited by thermal evaporation.

### Claim 5 (depends on 1)

The method of claim 1, further comprising removing the nickel layer.

### Claim 6

A method, comprising:
forming an article that comprises a carbon-containing self-assembled monolayer (SAM);
depositing a layer of nickel on the SAM;
heating the article in a reducing atmosphere; and
cooling the article, wherein
the heating and cooling steps are carried out so as to convert the SAM to a graphene layer,
the forming step comprises depositing a mixture of at least two amphiphilic compounds on a substrate,
the amphiphilic compound comprises a tail group and a head group,
the head group comprises a moiety that adheres to the substrate,
the tail group comprises a hydrocarbon moiety,
at least one of said amphiphilic compounds is an alkyl surfactant, and
at least one of said amphiphilic compounds comprises a p-type or n-type dopant element selected so that the heating and cooling steps result in the formation of a graphene layer having, respectively, p-type or n-type semiconductive behavior.

### Claim 7 (depends on 6)

The method of claim 6, wherein the head group adheres to the substrate by covalent bonding.

### Claim 8 (depends on 6)

The method of claim 6, further comprising removing the substrate from the graphene layer.

### Claim 9 (depends on 6)

The method of claim 6, wherein the nickel is deposited by thermal evaporation.

### Claim 10 (depends on 6)

The method of claim 6, further comprising removing the nickel layer.