# US 9,040,392 B2 · Method for controlled removal of a semiconductor device layer from a base substrate

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- Number: US 9,040,392 B2
- Document ID: US9040392B2
- Status: Granted
- Kind: B2
- Application number: 13/161,260
- Filed: 2011-06-15
- Published: 2012-12-20
- Granted: 2015-05-26
- Earliest claimed: 2011-06-15
- Assignees: International Business Machines Corporation
- Applicants: Stephen W. Bedell; Cheng-Wei Cheng; Devendra K. Sadana; Kuen-Ting Shiu; Norma E. Sosa Cortes
- Inventors: Stephen W. Bedell; Cheng-Wei Cheng; Devendra K. Sadana; Kuen-Ting Shiu; Norma E. Sosa Cortes
- Web page: https://patentgrep.com/patent/US9040392B2

## CPC

- H10P 10/128: {by direct semiconductor to semiconductor bonding}
- H10F 71/139: {using temporary substrates}
- H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P 90/1904: {Preparing vertically inhomogeneous wafers}
- H10P 95/112: {leaving a reusable substrate, e.g. epitaxial lift off}
- Y02E 10/50: Photovoltaic [PV] energy
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.

## Claims

### Claim 1

A method of removing a semiconductor device layer from a base substrate, said method comprising:
providing a crack propagation layer on an upper surface of a base substrate;
providing a semiconductor device layer including at least one semiconductor device on the crack propagation layer, wherein said at least one semiconductor device is formed on said semiconductor layer prior to forming said semiconductor layer on said crack propagation layer;
depositing a metal-containing adhesion layer on an upper surface of the semiconductor device layer;
forming a stressor layer containing a metal on an upper surface of the metal-containing adhesion layer;
applying a plastic sheet atop the stressor layer;
etching end portions of the crack propagation layer to initiate a crack in the crack propagation layer;
cleaving the etched crack propagation layer to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate;
removing the cleaved crack propagation layer portion from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion from the upper surface of the base substrate; and
removing said stressor layer and said plastic sheet from atop said semiconductor device layer after said cleaving.

### Claim 2 (depends on 1)

The method of claim 1, wherein the crack propagation layer includes a material that has a fracture toughness that is less than the base substrate and less than the semiconductor device layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein said material of the crack propagation layer comprises a semiconductor material.

### Claim 4 (depends on 3)

The method of claim 3, wherein said semiconductor material comprises germanium or AlAs.

### Claim 5 (depends on 2)

The method of claim 2, wherein the base substrate is a semiconductor material, glass or a ceramic.

### Claim 6 (depends on 1)

The method of claim 1, wherein said etching is performed in a bath including at least one etchant.

### Claim 7 (depends on 1)

The method of claim 1, wherein said cleaving is performed at a temperature from room temperature to less than room temperature.

### Claim 8 (depends on 1)

The method of claim 1, wherein said removing the cleaved crack propagation layer portion and the another cleaved crack propagation layer portion comprises an etching process.

### Claim 9 (depends on 1)

The method of claim 1, wherein said semiconductor device layer comprises at least one semiconductor device formed thereon, said at least one semiconductor device is formed after said forming the semiconductor device layer.

### Claim 10 (depends on 1)

The method of claim 1, wherein said plastic sheet has outer edges that extend beyond outer edges of said base substrate, said crack propagation layer, said semiconductor device layer and said stressor layer.

### Claim 11 (depends on 1)

The method of claim 1, wherein said cleaving comprises spalling.

### Claim 12 (depends on 1)

The method of claim 1, wherein said stressor layer comprises Ni.

### Claim 13 (depends on 1)

The method of claim 1, wherein said plastic sheet is a thermoplastic polymer.

### Claim 14 (depends on 1)

The method of claim 1, wherein said plastic sheet is a thermosetting polymer.

### Claim 15 (depends on 1)

The method of claim 1, wherein said applying the plastic sheet is by hand

### Claim 16

A method of removing a semiconductor device layer from a base substrate, said method comprising:
providing a crack propagation layer on an upper surface of a base substrate;
forming a semiconductor device layer including at least one semiconductor device on the crack propagation layer;
depositing a metal-containing adhesion layer containing at least one material selected from the group consisting of Ti/W, Ti and Cr on an upper surface of the semiconductor device layer;
forming a layer of Ni on an upper surface of the metal-containing adhesion layer;
applying a plastic sheet atop the layer of Ni;
etching end portions of the crack propagation layer to initiate a crack in the crack propagation layer;
cleaving the etched crack propagation layer to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate;
removing the cleaved crack propagation layer portion from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion from the upper surface of the base substrate; and
removing said layer of Ni and said plastic sheet from atop said semiconductor device layer after said cleaving.

### Claim 17 (depends on 16)

The method of claim 16, wherein said plastic sheet has outer edges that extend beyond outer edges of said base substrate, said crack propagation layer, said semiconductor device layer and said stressor layer.