# US 9,040,370 B2 · Anti-fuses on semiconductor fins

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- Number: US 9,040,370 B2
- Document ID: US9040370B2
- Status: Granted
- Kind: B2
- Application number: 14/189,655
- Filed: 2014-02-25
- Published: 2014-06-26
- Granted: 2015-05-26
- Earliest claimed: 2011-12-16
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Hsiao-Lan Yang
- Web page: https://patentgrep.com/patent/US9040370B2

## CPC

- H10W 20/491: {Antifuses, i.e. interconnections changeable from non-conductive to conductive}
- H10B 20/25: One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
- H10B 69/00: Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H10D 30/023: {having multiple independently-addressable gate electrodes influencing the same channel (manufacture or treatment of dual gate TFTs H10D30/031)}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 84/0149: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10W 20/0698: {Local interconnections}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A device includes a substrate, isolation regions at a surface of the substrate, and a semiconductor region over a top surface of the isolation regions. A conductive feature is disposed over the top surface of the isolation regions, wherein the conductive feature is adjacent to the semiconductor region. A dielectric material is disposed between the conductive feature and the semiconductor region. The dielectric material, the conductive feature, and the semiconductor region form an anti-fuse.

## Claims

### Claim 1

A method comprising:
performing an epitaxy to form an epitaxy region over a top surface of a Shallow Trench Isolation (STI) region, wherein the STI region is at a surface of a substrate;
forming a silicide region over and contacting the epitaxy region;
forming a conductive region adjacent to the silicide region and over the STI region;
filling a dielectric material between the conductive region and a combined region of the silicide region and the epitaxy region, wherein the conductive region, the combined region, and the dielectric material form an anti-fuse; and
connecting a power source to the silicide region and the conductive region, wherein the power source is configured to apply a programming voltage high enough to program the anti-fuse.

### Claim 2 (depends on 1)

The method of claim 1 further comprising:
forming a semiconductor fin over the top surface the STI region; and
recessing the semiconductor fin to form a recess, wherein the epitaxy region is formed starting from the recess.

### Claim 3 (depends on 1)

The method of claim 1 further comprising:
forming a semiconductor fin over the top surface the STI region, wherein the epitaxy region is formed starting from the semiconductor fin without recessing the semiconductor fin.

### Claim 4 (depends on 3)

The method of claim 3, wherein the forming the conductive region comprises:
forming a gate electrode layer over a gate dielectric layer, wherein the gate dielectric layer is over the semiconductor fin; and
patterning the gate electrode layer to form a gate electrode of a multi-gate transistor and the conductive region simultaneously.

### Claim 5 (depends on 1)

The method of claim 1, wherein the forming the conductive region comprises:
when the epitaxy is performed to form the epitaxy region, forming an additional epitaxy region simultaneously; and
when the silicide region is formed, forming an additional silicide region over and contacting the additional epitaxy region, wherein the anti-fuse is configured to break down between a first corner of the silicide region and a second corner of the additional silicide region.

### Claim 6 (depends on 1)

The method of claim 1, wherein the epitaxy region comprises facets having a (111) crystal orientation.

### Claim 7 (depends on 1)

The method of claim 1, wherein the performing the epitaxy to form the epitaxy region comprises epitaxially grown a silicon germanium region.

### Claim 8 (depends on 1)

The method of claim 1, wherein the power source is configured to generate a voltage high enough to break down a portion of the dielectric material between the silicide region and the conductive region or to melt the silicide region.

### Claim 9

A method comprising:
epitaxially growing a first epitaxy region and a second epitaxy region, wherein corners of the epitaxy region and a second epitaxy region face each other;
forming a first silicide region over and contacting the first epitaxy region;
forming a second silicide region over and contacting the second epitaxy region;
filling a dielectric material between first silicide region and the second silicide region, wherein the first silicide region, the second silicide region, and a portion of the dielectric material in between form an anti-fuse; and
connecting a power source to the first silicide region and the second silicide region, wherein the power source is configured to apply a programming voltage high enough to program the anti-fuse.

### Claim 10 (depends on 9)

The method of claim 9, wherein the first epitaxy region and the second epitaxy region are formed on sidewalls and top surfaces of a first semiconductor fin and a second semiconductor fin, respectively.

### Claim 11 (depends on 10)

The method of claim 10 further comprising:
forming a gate dielectric and a gate electrode on a top surface and sidewalls of the first semiconductor fin, wherein no gate dielectric and gate electrode are formed on the second semiconductor fin.

### Claim 12 (depends on 9)

The method of claim 9, wherein the power source is configured to apply the programming voltage high enough to breakdown the dielectric material.

### Claim 13 (depends on 9)

The method of claim 9, wherein the power source is configured to apply the programming voltage high enough to melt one of the first silicide region and the second silicide region.

### Claim 14

A method comprising:
applying a programming voltage to program an anti-fuse, wherein the anti-fuse comprises:
a first semiconductor fin over top surfaces of Shallow Trench Isolation (STI) regions, wherein the first semiconductor fin comprise facets;
a first silicide region contacting the first semiconductor fin;
a conductive feature adjacent to the first semiconductor fin; and
a dielectric material between the first semiconductor fin and the conductive feature, wherein the dielectric material, the first silicide region, and the conductive feature form the anti-fuse, and wherein during the applying the programming voltage, a portion of the dielectric material between the first semiconductor fin and the first silicide region are broken down.

### Claim 15 (depends on 14)

The method of claim 14, wherein during the applying the programming voltage, the first silicide region is molten.

### Claim 16 (depends on 14)

The method of claim 14 further comprising measuring a resistance between the first silicide region and the conductive feature to determine a state of the anti-fuse.

### Claim 17 (depends on 14)

The method of claim 14, wherein the conductive feature comprises:
a second semiconductor fin over the top surfaces of the STI regions, wherein the second semiconductor fin comprise additional facets; and
a second silicide region contacting the second semiconductor fin.

### Claim 18 (depends on 14)

The method of claim 14, wherein the conductive feature comprises a material selected from polysilicon, a metal, and a metal silicide, and wherein the conductive feature and the first semiconductor fin and the first silicide are at a same level.

### Claim 19 (depends on 14)

The method of claim 14, wherein the programming voltage is in a range between about −3V and about 3V.

### Claim 20 (depends on 16)

The method of claim 16, wherein after the portion of the dielectric material is broken down, the resistance measured between the first silicide region and the conductive feature is lower than the resistance measured between the first silicide region and the conductive feature before the portion of the dielectric material is broken down.