# US 9,040,353 B2 · Method for manufacturing semiconductor light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,353 B2 - Document ID: US9040353B2 - Status: Granted - Kind: B2 - Application number: 13/957,289 - Filed: 2013-08-01 - Published: 2014-03-20 - Granted: 2015-05-26 - Earliest claimed: 2012-09-18 - Assignees: Toyoda Gosei Co., Ltd. - Applicants: Toyoda Gosei Co., LTD. - Inventors: Takayoshi Yajima; Hiroshi Ito - Web page: https://patentgrep.com/patent/US9040353B2 ## CPC - H10H 20/851: Wavelength conversion means - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient} - H10H 20/036: {of packages} - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/8506: {Containers} - H10H 20/8583: {not being in contact with the bodies} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A method for manufacturing a semiconductor light emitting device comprises a sealing step of sealing a semiconductor chip fixed on a lead frame with a sealing member, a removal step of removing the sealing member until a surface of the semiconductor chip becomes exposed, an irregularity formation step of forming fine irregularities on a bond surface formed in the removal step, and a bonding step of bonding a wavelength conversion member to the bond surface. ## Claims ### Claim 1 A method for manufacturing a semiconductor light emitting device, the method comprising: sealing a semiconductor chip fixed on a lead frame with a sealing member; removing the sealing member until a surface of the semiconductor chip becomes exposed; forming fine irregularities on a bond surface formed in the removing; and bonding a wavelength conversion member to the bond surface, wherein the bond surface is ground in a plurality of directions in the forming fine irregularities. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the removing doubles as the forming. ### Claim 3 (depends on 1) The method for manufacturing a semiconductor light emitting device according to claim 1, wherein, in the bonding, the wavelength conversion member is bonded to the bond surface such that the wavelength conversion member covers the semiconductor chip and extends up to a region of the sealing member. ### Claim 4 (depends on 1) The method for manufacturing a semiconductor light emitting device according to claim 1, wherein, in the bonding, the wavelength conversion member is bonded to the bond surface such that the wavelength conversion member covers the semiconductor chip and extends up to a region of the sealing member whereby a contact area of the bond surface with the wavelength conversion member increases. ### Claim 5 (depends on 1) The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the sealing member doubles as a housing of the semiconductor light emitting device. ### Claim 6 A method for manufacturing a semiconductor light emitting device, the method comprising: sealing a semiconductor chip fixed on a lead frame with a sealing member; removing the sealing member until a surface of the semiconductor chip becomes exposed; forming fine irregularities on a bond surface formed in the removing; and bonding a wavelength conversion member to the bond surface, wherein the fine irregularities are formed so as to conform to a wavelength of light emanating from the semiconductor chip. ### Claim 7 A method for manufacturing a semiconductor light emitting device, the method comprising: sealing a semiconductor chip fixed on a lead frame with a sealing member; removing the sealing member until a surface of the semiconductor chip becomes exposed; forming fine irregularities on a bond surface formed in the removing; and bonding a wavelength conversion member to the bond surface, wherein the removing comprises grinding the sealing member so as to expose a height of the semiconductor chip between 1 to 50 microns. ### Claim 8 A method for manufacturing a semiconductor light emitting device, the method comprising: sealing a semiconductor chip fixed on a lead frame with a sealing member; removing the sealing member until a surface of the semiconductor chip becomes exposed; forming fine irregularities on a bond surface formed in the removing; and bonding a wavelength conversion member to the bond surface, wherein the bond surface includes an upper end bond surface of the sealing member and an upper end bond surface of the semiconductor chip. ### Claim 9 A method for manufacturing a semiconductor light emitting device, the method comprising: sealing a semiconductor chip fixed on a lead frame with a sealing member; removing the sealing member until a surface of the semiconductor chip becomes exposed; forming fine irregularities on a bond surface formed in the removing; and bonding a wavelength conversion member to the bond surface, wherein the fine irregularities are formed such that light transmitted towards an inside of the semiconductor chip is blocked.