# US 9,040,338 B2 · Power semiconductor module with method for manufacturing a sintered power semiconductor module

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,040,338 B2
- Document ID: US9040338B2
- Status: Granted
- Kind: B2
- Application number: 13/883,348
- Filed: 2011-10-28
- Published: 2013-09-05
- Granted: 2015-05-26
- Earliest claimed: 2010-11-05
- Assignees: Danfoss Silicon Power GmbH
- Applicants: Ronald Eisele
- Inventors: Ronald Eisele
- Web page: https://patentgrep.com/patent/US9040338B2

## CPC

- H10N 15/00: Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N19/00)
- G01K 7/16: using resistive elements
- H10W 40/00: Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60)
- H10W 70/692: Ceramics or glasses
- H10W 72/07331: {Connecting techniques}
- H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G01K: MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR (radiation pyrometry G01J5/00)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Method of manufacturing sinterable electrical components for jointly sintering with active components, the components in planar shape being provided with at least one planar lower face meant for sintering, and an electrical contact area on the face opposite to the sintering face being available in the form of a metallic contact face, whose upper side is contactable by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting, the component being a temperature sensor, whose lower face is provided with a sinterable metallization on a ceramic body, said ceramic body having two electrical contact faces for continued electrical connection.

## Claims

### Claim 1

A method of manufacturing a sintered power semiconductor module with a sinterable temperature sensor, with the steps:
making the temperature sensor in a planar shape with at least one planar lower face meant for sintering, and
making an electrical contact area on the face opposite to the sintering face, said contact area being contactable on the top side by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting or ultrasonic welding,
wherein on the lower face of the temperature sensor a sinterable metallisation is applied on a ceramic body, conductor paths of Pt or Ni being formed in the middle of the ceramic body and two top side contact faces being formed laterally on the ceramic body as electrical contact areas.

### Claim 2 (depends on 1)

The method of manufacturing according to claim 1, wherein
the location of two electrical contact faces to be kept electrically isolatable in relation to the sinter face of the top side of the ceramic body and
electric contacting by optionally using wire bonding, soldering, sintering or pressure contacting on the top side of the contacts.

### Claim 3 (depends on 2)

The power semiconductor according to claim 2, wherein a temperature sensor sintered onto the conductor layer holding the active component.

### Claim 4 (depends on 1)

The method according to claim 1, wherein sintering is performed on a conductor path.

### Claim 5 (depends on 4)

The power semiconductor according to claim 4, wherein a temperature sensor sintered onto the conductor layer holding the active component.

### Claim 6 (depends on 1)

The method according to claim 1, wherein sintering is performed on the surface of an active component.

### Claim 7 (depends on 6)

The power semiconductor according to claim 6, wherein a temperature sensor sintered onto the conductor layer holding the active component.

### Claim 8 (depends on 1)

The power semiconductor according to claim 1, wherein a temperature sensor sintered onto the conductor layer holding the active component.

### Claim 9

A method of manufacturing a sintered power semiconductor module with a sinterable temperature sensor, with the steps:
making the temperature sensor in a planar shape with at least one planar lower face meant for sintering, and
making an electrical contact area on the face opposite to the sintering face, said contact area being contactable on the top side by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting or ultrasonic welding,
wherein on its lower face the temperature sensor is provided with a sinterable metallisation on a ceramic insulation layer, and
on its function volume two electrical contact faces are provided to be electrically isolatable in relation to the sintered surface on the top side and
electrical contacting of both contact faces after sintering occurs optionally by means of wire bonding, soldering, sintering or pressure contacting or ultrasonic welding on the top side of the contacts.

### Claim 10 (depends on 9)

The method according to claim 9, wherein sintering is performed on a conductor path.

### Claim 11 (depends on 9)

The method according to claim 9, wherein sintering is performed on the surface of an active component.

### Claim 12 (depends on 9)

The power semiconductor according to claim 9, wherein a temperature sensor sintered onto the conductor layer holding the active component.