# US 9,040,329 B2 · Light emitting diode and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,329 B2 - Document ID: US9040329B2 - Status: Granted - Kind: B2 - Application number: 13/463,821 - Filed: 2012-05-04 - Published: 2013-02-07 - Granted: 2015-05-26 - Earliest claimed: 2011-08-05 - Assignees: Zhongshan Innocloud Intellectual Property Services Co., Ltd. - Applicants: Chia-Hui Shen; Tzu-Chien Hung - Inventors: Chia-Hui Shen; Tzu-Chien Hung - Web page: https://patentgrep.com/patent/US9040329B2 ## CPC - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/032: {of electrodes} - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/832: characterised by their material - H10H 20/833: Transparent materials - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers. ## Claims ### Claim 1 A manufacturing method for a light emitting diode (LED), comprising following steps: providing an LED wafer, wherein an electrically conductive layer is disposed on the LED wafer, and the LED wafer comprises a substrate and an epitaxial layer on the substrate, the electrically conductive layer being located on the epitaxial layer; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression, the depression being recessed in the epitaxial layer without reaching the substrate; and disposing two pads respectively in the depression and on the electrically conducting layer to electrically connect with different layers of the epitaxial layer; wherein the roughened sidewall of the LED wafer by the dry etching process is flush with the roughened lateral surface of the electrically conductive layer by the wet etching process. ### Claim 2 (depends on 1) The manufacturing method for the LED as claimed in claim 1, wherein the epitaxial layer of the LED wafer comprises an N-type gallium nitride (GaN) layer on the substrate, a light emitting layer on the N-type GaN layer and a P-type GaN layer on the light emitting layer, the electrically conductive being on the P-type GaN layer. ### Claim 3 (depends on 2) The manufacturing method for the LED as claimed in claim 2, wherein the electrically conductive layer is disposed on the P-type GaN layer. ### Claim 4 (depends on 3) The manufacturing method for the LED as claimed in claim 3, wherein the electrically conductive layer is made of indium tin oxide (ITO) by vapor deposition. ### Claim 5 (depends on 1) The manufacturing method for the LED as claimed in claim 1, in the step of providing the photoresist layer on the electrically conductive layer, wherein a portion of a top surface of the electrically conductive layer is exposed from the photoresist layer. ### Claim 6 (depends on 1) The manufacturing method for the LED as claimed in claim 1, in the step of roughening the lateral surface of the electrically conductive layer by wet etching, wherein the lateral surface of the electrically conductive layer is flush with a lateral surface of the photoresist layer. ### Claim 7 (depends on 6) The manufacturing method for the LED as claimed in claim 6, wherein the wet etching process makes use of potassium hydroxide (K.OH), hydrochloric acid (H.Cl) or phosphoric acid (H3{PO}4). ### Claim 8 (depends on 1) The manufacturing method for the LED as claimed in claim 1, wherein the step of roughening the sidewall of the LED wafer defining the depression sequentially follows the step of roughening the lateral surface of the electrically conductive layer by wet etching. ### Claim 9 (depends on 8) The manufacturing method for the LED as claimed in claim 8, wherein a degree of roughness of the lateral surface of the electrically conductive layer is equal to a degree of roughness of the sidewall of the depression. ### Claim 10 (depends on 1) The manufacturing method for the LED as claimed in claim 1, wherein the dry etching process makes use of inductively coupled plasma (ICP), reactive ion etching (RIE) or high density plasma (HDP). ### Claim 11 (depends on 1) The manufacturing method for the LED as claimed in claim 1, wherein the photoresist layer is removed from the electrically conductive layer before the step of disposing the two pads respectively in the depression and on the electrically conducting layer. ### Claim 12 (depends on 1) The manufacturing method for the LED as claimed in claim 1, wherein the two pads comprises an N-type electrode disposed in the depression and a P-type electrode disposed on the electrically conducting layer. ### Claim 13 (depends on 12) The manufacturing method for the LED as claimed in claim 12, wherein the two pads are alloy of gold (Au) and chromium (Cr). ### Claim 14 (depends on 1) The manufacturing method for the LED as claimed in claim 1, wherein a degree of roughness of the roughened sidewall of the LED wafer defining the depression is measurable in micrometers (μm).