# US 9,040,328 B2 · Manufacturing method for an LED

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- Number: US 9,040,328 B2
- Document ID: US9040328B2
- Status: Granted
- Kind: B2
- Application number: 14/269,189
- Filed: 2014-05-04
- Published: 2014-08-28
- Granted: 2015-05-26
- Earliest claimed: 2011-06-30
- Assignees: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
- Applicants: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
- Inventors: Ya-Wen Lin; Shih-Cheng Huang; Po-Min Tu; Chia-Hung Huang; Shun-Kuei Yang
- Web page: https://patentgrep.com/patent/US9040328B2

## CPC

- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/8162: {Current-blocking structures}
- H10H 20/831: characterised by their shape
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.

## Claims

### Claim 1

A manufacturing method for an LED (light emitting diode), comprising:
providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate;
forming a blocking layer on the first N-type epitaxial layer;
etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer;
forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves;
forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and
forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, the N-type electrode disposed on the blocking layer opposite to the P-type electrode, wherein the N-type electrode is separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.

### Claim 2 (depends on 1)

The manufacturing method for an LED as claimed in claim 1, wherein the buffer layer is made of a III-group nitride compound semiconducting material, and the first N-type epitaxial layer is a III-group nitride compound semiconductor contacting layer.

### Claim 3 (depends on 2)

The manufacturing method for an LED as claimed in claim 2, wherein the blocking layer is a III-group nitride compound electron blocking layer.

### Claim 4 (depends on 2)

The manufacturing method for an LED as claimed in claim 2, wherein the second N-type epitaxial layer is a III-group nitride compound semiconducting material.

### Claim 5 (depends on 4)

The manufacturing method for an LED as claimed in claim 4, wherein the light emitting layer is a III-group nitride compound semiconductor active layer, the P-type epitaxial layer is a III-group nitride compound semiconducting material, and the conductive layer is a transparent conductive layer.

### Claim 6 (depends on 1)

The manufacturing method for an LED as claimed in claim 1, wherein the N-type electrode is located on the blocking layer and makes contact with the first N-type epitaxial layer via a portion of the N-type electrode in the patterned grooves of the blocking layer.

### Claim 7 (depends on 1)

The manufacturing method for an LED as claimed in claim 1, wherein the N-type electrode is located on the first N-type epitaxial layer.

### Claim 8 (depends on 1)

The manufacturing method for an LED as claimed in claim 1, wherein a depression penetrating through the second N-type epitaxial layer, the blocking layer, the light emitting layer and the P-type epitaxial layer is formed for accommodating the N-type electrode therein.

### Claim 9 (depends on 8)

The manufacturing method for an LED as claimed in claim 8, wherein the depression occupies an area which is substantially similar to that the N-type electrode occupies.

### Claim 10

A manufacturing method for an LED, comprising:
providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate;
forming a blocking layer on the first N-type epitaxial layer;
etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer;
forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves;
forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and
forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, wherein the N-type electrode is disposed inside the patterned grooves of the blocking layer to contact the first N-type epitaxial layer.