# US 9,040,327 B2 · Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

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- Number: US 9,040,327 B2
- Document ID: US9040327B2
- Status: Granted
- Kind: B2
- Application number: 13/495,231
- Filed: 2012-06-13
- Published: 2012-10-11
- Granted: 2015-05-26
- Earliest claimed: 2007-02-12
- Assignees: The Regents of the University of California
- Applicants: Daniel F. Feezell; Mathew C. Schmidt; Kwang-Choong Kim; Robert M. Farrell; Daniel A. Cohen; James S. Speck; Steven P. DenBaars; Shuji Nakamura
- Inventors: Daniel F. Feezell; Mathew C. Schmidt; Kwang-Choong Kim; Robert M. Farrell; Daniel A. Cohen; James S. Speck; Steven P. DenBaars; Shuji Nakamura
- Web page: https://patentgrep.com/patent/US9040327B2

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H10H 20/817: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H01S 5/3211: {characterised by special cladding layers, e.g. details on band-discontinuities}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H10H 20/81: Bodies
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

## Claims

### Claim 1

An optoelectronic device, comprising:
a nonpolar or semipolar Group III nitride semiconductor light emitting device having an active region comprised of one or more nonpolar or semipolar Group III nitride quantum wells, and no Al-containing waveguide cladding layers, wherein the quantum wells effectively confine an optical mode to the active region, such that the quantum wells function as an optical waveguide layer for the light emitting device.

### Claim 2 (depends on 1)

The device of claim 1, wherein the quantum wells provide enough material with a high index of refraction as compared to adjacent material to effectively confine the optical mode to the active region.

### Claim 3 (depends on 1)

The device of claim 1, wherein the quantum wells are of sufficient thickness to effectively confine the optical mode to the active region.

### Claim 4 (depends on 3)

The device of claim 3, wherein the quantum wells have a thickness greater than 4, 5, 6, 7, or 8 nm.

### Claim 5 (depends on 1)

The device of claim 1, wherein the light emitting device has one or more Al-containing layers that do not confine the optical mode.

### Claim 6 (depends on 1)

The device of claim 1, wherein a substrate of the light emitting device has no substantial effect on the optical mode.

### Claim 7 (depends on 6)

The device of claim 6, wherein a substrate of the light emitting device has an index of refraction lower than the quantum wells.

### Claim 8

A method of fabricating an optoelectronic device, comprising:
creating a nonpolar or semipolar Group III nitride semiconductor light emitting device having an active region comprised of one or more nonpolar or semipolar Group III nitride quantum wells, and no Al-containing waveguide cladding layers, wherein the quantum wells effectively confine an optical mode to the active region, such that the quantum wells function as an optical waveguide layer for the light emitting device.

### Claim 9 (depends on 8)

The method of claim 8, wherein the quantum wells provide enough material with a high index of refraction as compared to adjacent material to effectively confine the optical mode to the active region.

### Claim 10 (depends on 8)

The method of claim 8, wherein the quantum wells are of sufficient thickness to effectively confine the optical mode to the active region.

### Claim 11 (depends on 10)

The method of claim 10, wherein the quantum wells have a thickness greater than 4, 5, 6, 7, or 8 nm.

### Claim 12 (depends on 8)

The method of claim 8, wherein the light emitting device has one or more Al-containing layers that do not confine the optical mode.

### Claim 13 (depends on 8)

The method of claim 8, wherein a substrate of the light emitting device has no substantial effect on the optical mode.

### Claim 14 (depends on 13)

The method of claim 13, wherein a substrate of the light emitting device has an index of refraction lower than the quantum wells.