# US 9,040,323 B2 · Display device and fabricating method thereof

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- Number: US 9,040,323 B2
- Document ID: US9040323B2
- Status: Granted
- Kind: B2
- Application number: 13/607,002
- Filed: 2012-09-07
- Published: 2013-10-10
- Granted: 2015-05-26
- Earliest claimed: 2012-04-10
- Assignees: Samsung Display Co., Ltd.
- Applicants: Jungmoo Hong; Hyundae Lee
- Inventors: Jungmoo Hong; Hyundae Lee
- Web page: https://patentgrep.com/patent/US9040323B2

## CPC

- G02B 26/02: for controlling the intensity of light {(G02B26/004 takes precedence)}
- G02B 26/005: {based on electrowetting}
- G09G 3/348: {based on the deformation of a fluid drop, e.g. electrowetting}
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)

## Abstract

Pixels of a display device include a first substrate, an organic insulation layer disposed on the first substrate and having an upper surface formed in an uneven structure, an inorganic insulation layer disposed on the organic insulation layer and formed in the uneven structure, a first electrode disposed on the inorganic insulation layer and formed in the uneven structure, and a device to provide a data voltage to the first electrode, in which the first electrode includes a reflective electrode to reflect incident light.

## Claims

### Claim 1

A method of fabricating a display device comprising a plurality of pixels, the method comprising:
forming an organic insulation layer on a first substrate;
stressing the organic insulation layer via deposition of an inorganic insulation layer on the organic insulation layer, stress of the deposition causing, at least in part, an uneven structure in an upper surface of the organic insulation layer, the inorganic insulation layer being formed with the uneven structure in an upper surface of the inorganic insulation layer; and
forming a first electrode on the inorganic insulation layer, an upper surface of the first electrode being formed with the uneven structure,
wherein the forming of the first electrode comprises forming a reflective electrode.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the first electrode further comprises forming a transparent conductive layer on the inorganic insulation layer, the reflective electrode being formed on the transparent conductive layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein each pixel comprises a reflection region configured to reflect light and a transmission region configured to transmit light, and the reflective electrode is formed in the reflection region.

### Claim 4 (depends on 1)

The method of claim 1, further comprising:
forming a device in each pixel, the device being disposed between the first substrate and the organic insulation layer; and
forming a contact hole in the organic insulation layer and the inorganic insulation layer of each pixel,
wherein the device is connected to the first electrode via the contact hole.

### Claim 5 (depends on 1)

The method of claim 1, wherein the inorganic insulation layer is formed within a temperature range of about 150° C. to about 245° C.

### Claim 6 (depends on 5)

The method of claim 5, wherein a thickness of the inorganic insulation layer is in a range of about 1000 Å to about 5000 Å.

### Claim 7 (depends on 6)

The method of claim 6, wherein the inorganic insulation layer is formed at a deposition rate ranging from about 5 Å/s to about 50 Å/s.

### Claim 8 (depends on 1)

The method of claim 1, wherein the uneven structure comprises a plurality of protrusions and a plurality of valleys, and a difference in heights of the protrusions and the valleys is equal to or less than about 500 nm.

### Claim 9 (depends on 8)

The method of claim 8, wherein a spacing between adjacent valleys is equal to or less than about 3 μm.

### Claim 10 (depends on 9)

The method of claim 9, wherein a root mean square (RMS) roughness value of the uneven structure is in a range of about 10 nm to about 200 nm.

### Claim 11 (depends on 1)

The method of claim 1, wherein the organic insulation layer comprises:
about 65 wt % to about 75 wt % of methyl-3-methoxypropionate; and
about 10 wt % to about 20 wt % of dipropylene glycol dimethyl ether.

### Claim 12 (depends on 1)

The method of claim 1, further comprising:
forming an insulation layer on the inorganic insulation layer, the insulation layer covering the reflective electrode;
forming a hydrophobic layer on the insulation layer;
forming a partition wall on the hydrophobic layer, the partition wall partitioning the pixels;
disposing an electrowetting layer comprising a first fluid and a second fluid that are immiscible with each other in the pixels, the second fluid having electrical conductivity or polarity;
forming a second electrode on a second substrate; and
coupling the first substrate and the second substrate together.

### Claim 13

A method of fabricating a display device comprising a plurality of pixels, the method comprising:
forming an organic insulation layer on a first substrate;
stressing the organic insulation layer via deposition of an inorganic insulation layer on the organic insulation layer, stress of the deposition causing, at least in part, a roughing of an upper surface of the organic insulation layer; and
forming a conductive material on the inorganic insulation layer,
wherein an upper surface of the conductive material and an upper surface of the inorganic insulation layer have a roughened upper surface that corresponds to the roughened upper surface of the organic insulation layer, and
wherein a root mean square roughness value of the roughened upper surface of the organic insulation layer is in a range of about 10 nm to about 200 nm.