# US 9,040,320 B2 · Manufacturing method of organic light emitting display device

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- Number: US 9,040,320 B2
- Document ID: US9040320B2
- Status: Granted
- Kind: B2
- Application number: 14/104,404
- Filed: 2013-12-12
- Published: 2014-12-04
- Granted: 2015-05-26
- Earliest claimed: 2013-05-28
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Jae Hyun Park; Jin Wuk Kim; Wy Yong Kim
- Web page: https://patentgrep.com/patent/US9040320B2

## CPC

- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A manufacturing method of an organic light emitting display device is disclosed which includes: forming a thin film transistor on each sub-pixel region which is defined in a substrate; forming a passivation layer on the substrate provided with the thin film transistor; forming a first electrode of an organic light emitting diode in each sub-pixel region of the passivation layer; forming a bank pattern in boundaries of the sub-pixel region of the passivation layer; forming a photoresist pattern, which exposes a first sub-pixel region, on the bank pattern; forming an organic light emission layer on the first electrode within the first sub-pixel region and an organic material layer on the photoresist pattern by depositing an organic material on the entire surface of the substrate provided with the photoresist pattern; and removing the photoresist pattern and the organic material pattern using a detachment film.

## Claims

### Claim 1

A method of manufacturing an organic light emitting display device, the method comprising:
forming a thin film transistor on each sub-pixel region which is defined in a substrate;
forming a passivation layer on the substrate with the thin film transistor formed thereon;
forming a first electrode of an organic light emitting diode in each sub-pixel region of the passivation layer;
forming a bank pattern in boundaries of the sub-pixel region of the passivation layer;
forming a photoresist pattern, which exposes a first sub-pixel region, on the bank pattern;
forming an organic light emission layer on the first electrode within the first sub-pixel region and an organic material layer on the photoresist pattern by depositing an organic material on the entire surface of the substrate with the photoresist pattern; and
removing the photoresist pattern and the organic material pattern using a detachment film,
wherein the detachment film includes polymer clay and is disposed on the organic material pattern and formed to encompass side surfaces of the organic material pattern and the photoresist pattern.

### Claim 2 (depends on 1)

The method of claim 1, wherein the detachment film further includes an elastomer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the detachment film further includes a tackifier.

### Claim 4 (depends on 1)

The method of claim 1, wherein the polymer clay includes a foaming agent.

### Claim 5 (depends on 1)

The method of claim 1, wherein the polymer clay includes a phthalate-based additive.

### Claim 6 (depends on 1)

The method of claim 1, wherein the detachment film includes a support layer and an adhesive layer.

### Claim 7 (depends on 6)

The method of claim 6, wherein the adhesive layer of the detachment film is hardened in a range of 17%˜85%.

### Claim 8 (depends on 1)

The method of claim 1, wherein the detachment film is formed in a thickness range of 2 μm˜200 μm.

### Claim 9 (depends on 1)

The method of claim 1, wherein the detachment film is wound round a detachment roller, and the separation of the photoresist pattern and the organic material pattern includes:
disposing the detachment roller wound with the detachment film;
bringing the detachment film in contact with an upper surface of the organic material pattern and the side surfaces of the organic material pattern and the photoresist pattern; and
removing the photoresist pattern and the organic material pattern by rotating the detachment roller.

### Claim 10 (depends on 1)

The method of claim 1, further comprising hardening the photoresist pattern by irradiating ultra-violet rays to the photoresist pattern before the photoresist pattern and the organic material pattern is removed using the detachment film.

### Claim 11 (depends on 1)

The method of claim 1, wherein the formation of the photoresist pattern includes:
laminating a first photoresist film on the bank pattern; and
irradiating laser light to the rest regions of the photoresist film with the exception of the first sub-pixel region; and
removing the first photoresist film from the bank pattern with the exception of the photoresist pattern.

### Claim 12 (depends on 1)

The method of claim 1, wherein first photoresist film includes:
a photoresist composition layer coming in contact with the bank pattern;
a photo expansion layer formed on the photoresist composition layer; and
a support layer formed on the photo expansion layer.