# US 9,040,232 B2 · Method for pattern formation, method and composition for resist underlayer film formation, and resist underlayer film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,232 B2 - Document ID: US9040232B2 - Status: Granted - Kind: B2 - Application number: 13/246,915 - Filed: 2011-09-28 - Published: 2012-05-24 - Granted: 2015-05-26 - Earliest claimed: 2010-09-29 - Assignees: Jsr Corporation - Applicants: Shin-ya Minegishi; Shin-ya Nakafuji; Satoru Murakami; Toru Kimura - Inventors: Shin-ya Minegishi; Shin-ya Nakafuji; Satoru Murakami; Toru Kimura - Web page: https://patentgrep.com/patent/US9040232B2 ## CPC - C09D 161/14: Modified phenol-aldehyde condensates - G03F 7/094: {Multilayer resist systems, e.g. planarising layers} - G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} - H10P 50/73: {using masks for insulating materials} - C08K 5/42: Sulfonic acids; Derivatives thereof - C08L 101/02: characterised by the presence of specified groups {, e.g. terminal or pendant functional groups} - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09) - C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06) ## Abstract Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask. ## Claims ### Claim 1 A method for forming a pattern, the method comprising: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition comprising a polymer comprising a structural unit derived from (A) a compound comprising a group represented by the following formula (1): wherein, in the formula (1), R represents a monovalent organic group having 1 to 30 carbon atoms, the monovalent organic group represented by R does not include an oxygen atom at the end of the side adjacent the sulfur atom, and * represents a bonding hand; (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask, wherein the compound (A) comprises at least one ring selected from the group consisting of an aromatic ring and a heteroaromatic ring, and the bonding hand denoted by * in the group represented by the above formula (1) bonds via an oxygen atom with the aromatic ring or the heteroaromatic ring. ### Claim 2 (depends on 1) The method for forming a pattern according to claim 1, further comprising after the step of (1) forming a resist underlayer film and prior to the step of (2) forming a resist coating film, a step of: (1′) forming an intermediate layer on the upper face side of the resist underlayer film, and wherein in the step of forming a pattern (5), the intermediate layer is further dry etched. ### Claim 3 (depends on 1) The method for forming a pattern according to claim 1, wherein R in the above formula (1) represents at least one group selected from the set consisting of an aryl group which may have a substituent and a heteroaryl group which may have a substituent. ### Claim 4 (depends on 1) The method for forming a pattern according to claim 1, wherein the compound (A) comprises a partial structure represented by the following formula (2): wherein, in the formula (2), Q represents a partial structure consisting of an aromatic ring or a heteroaromatic ring; R is as defined in the above formula (1); Y represents an oxygen atom; n0 is an integer of 1 or greater; R1 represents a monovalent organic group; m0 is an integer of 0 or greater; and provided that the number of R, Y or R1 is more than one, each R, each Y and each R1 may be the same or different. ### Claim 5 (depends on 1) The method for forming a pattern according to claim 1, wherein the polymer is at least one resin selected from the group consisting of a novolak resin, a resol resin, a styrene resin, an acenaphthylene resin and a polyarylene resin. ### Claim 6 (depends on 1) The method for forming a pattern according to claim 1, wherein the composition for forming a resist underlayer film further comprises (B) a solvent. ### Claim 7 (depends on 1) The method for forming a pattern according to claim 1, wherein the resist underlayer film is an organic film. ### Claim 8 A method for forming a resist underlayer film comprising: (1) forming a coated film by applying a composition for forming a resist underlayer film, the composition comprising a polymer comprising a structural unit derived from (A) a compound comprising a group represented by the following formula (1) on a substrate to be processed; and (2) forming a resist underlayer film by heating the coated film, wherein, in the formula (1), R represents a monovalent organic group having 1 to 30 carbon atoms, the monovalent organic group represented by R does not include an oxygen atom at the end of the side adjacent the sulfur atom, and * represents a bonding hand, wherein the compound (A) comprises at least one ring selected from the group consisting of an aromatic ring and a heteroaromatic ring, and the bonding hand denoted by * in the group represented by the above formula (1) bonds via an oxygen atom with the aromatic ring of the heteroaromatic ring. ### Claim 9 (depends on 8) The method for forming a resist underlayer film according to claim 8, wherein the resist underlayer film is an organic film.