# US 9,040,177 B2 · Dopant host

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- Number: US 9,040,177 B2
- Document ID: US9040177B2
- Status: Granted
- Kind: B2
- Application number: 14/163,708
- Filed: 2014-01-24
- Published: 2014-05-22
- Granted: 2015-05-26
- Earliest claimed: 2007-11-09
- Assignees: Nippon Electric Glass Co., Ltd.
- Applicants: Nippon Electric Glass Co., Ltd.
- Inventors: Yoshio Umayahara; Ryota Suzuki; Yoshikatsu Nishikawa; Masaru Ikebe; Hiroki Mori; Yoshinori Hasegawa
- Web page: https://patentgrep.com/patent/US9040177B2

## CPC

- B32B 17/06: comprising glass as the main or only constituent of a layer, next to another layer of a specific {material}
- C03C 3/064: containing boron
- C03C 3/091: containing aluminium
- C04B 35/117: Composites
- H10P 32/19: {Diffusion sources}
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3213: Strontium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3409: Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
- C04B 2235/3418: Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
- C04B 2235/36: Glass starting materials for making ceramics, e.g. silica glass
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A dopant host containing, in terms of mole %, 20 to 50% SiO2, 30 to 60% (exclusive of 30%) Al2O3, 10 to 40% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, or being a laminate including a boron component volatilization layer containing, in terms of mole %, 30 to 60% SiO2, 10 to 30% Al2O3, 15 to 50% B2O3, and 2 to 10% RO, wherein R represents alkaline earth metal, and a heat resistant layer containing, in terms of mole %, 8 to 30% SiO2, 50 to 85% Al2O3, 5 to 20% B2O3, and 0.5 to 7% RO, wherein R represents alkaline earth metal. A process for producing a boron dopant for a semiconductor including the steps of slurrying a starting material powder containing a boron-containing crystalline glass powder, forming the slurry to prepare a green sheet, and sintering the green sheet.

## Claims

### Claim 1

A dopant host characterized in that it comprises a laminate including a boron component vaporization layer having a composition comprising 30-60% by mole of SiO2, 10-30% by mole of Al2O3, 15-50% by mole of B2O3 and 2-10% by mole of RO, wherein R denotes an alkaline earth metal, and a heat resistant layer having a composition comprising 8-30% by mole of SiO2, 50-85% by mole of Al2O3, 5-20% by mole of B2O3 and 0.5-7% by mole of RO, wherein R denotes an alkaline earth metal.

### Claim 2 (depends on 1)

The dopant host as recited in claim 1, characterized in that it includes the boron component vaporization layer as an outermost layer.

### Claim 3 (depends on 1)

The dopant host as recited in claim 1, characterized in that it is made by sintering a laminate of green sheets.

### Claim 4 (depends on 2)

The dopant host as recited in claim 2, characterized in that it is made by sintering a laminate of green sheets.