# US 9,040,144 B2 · Filtering film structure

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- Number: US 9,040,144 B2
- Document ID: US9040144B2
- Status: Granted
- Kind: B2
- Application number: 13/603,128
- Filed: 2012-09-04
- Published: 2014-03-06
- Granted: 2015-05-26
- Earliest claimed: 2012-09-04
- Assignees: National Tsing Hua University
- Applicants: Fan-Gang Tseng; Yu-Lun Chueh; Chia-Jung Chang; Wen-Chih Chang; Yu-Sheng Huang
- Inventors: Fan-Gang Tseng; Yu-Lun Chueh; Chia-Jung Chang; Wen-Chih Chang; Yu-Sheng Huang
- Web page: https://patentgrep.com/patent/US9040144B2

## CPC

- B01D 61/46: Apparatus therefor
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- Y10T 428/24339: Keyed
- B01D: SEPARATION (separating solids from solids by wet methods B03B, B03D; by pneumatic jigs or tables B03B; by other dry methods B07; magnetic or electrostatic separation of solid materials from solid materials or fluids, separation by high-voltage electric fields B03C; centrifuges, vortex apparatus B04; presses per se for squeezing-out liquid from liquid-containing material B30B9/02; treatment of water C02F, e.g. softening by ion-exchange C02F1/42; {arrangements of air intake cleaners in gas turbine plants F02C7/05} ; arrangements or mounting of filters in air-conditioning, air-humidification or ventilation F24F13/28)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.

## Claims

### Claim 1

A filtering film structure, comprising:
a film comprising a plurality of holes;
a conductive layer disposed on an inner surface of the holes; and
a dielectric layer disposed on the conductive layer;
an electrical charge layer formed on the surface of the dielectric layer when a voltage is applied to the conductive layer.

### Claim 2 (depends on 1)

The filtering film structure of claim 1, wherein the material of the film comprises aluminum oxide.

### Claim 3 (depends on 1)

The filtering film structure of claim 1, wherein the material of the conductive layer comprises metal, metal oxide or alloy.

### Claim 4 (depends on 3)

The filtering film structure of claim 3, wherein the metal comprises aluminum, indium, tin, zinc, silver, gold, or platinum.

### Claim 5 (depends on 1)

The filtering film structure of claim 1, wherein the material of the dielectric layer comprises HfO2, ZrO2, BaTiO3, or Al2O3.

### Claim 6 (depends on 1)

The filtering film structure of claim 1, wherein the thickness of the conductive layer is between 1 nm and 100 nm.

### Claim 7 (depends on 1)

The filtering film structure of claim 1, wherein the thickness of the dielectric layer is between 1 nm and 100 nm.

### Claim 8 (depends on 1)

The filtering film structure of claim 1, wherein the electrical charge layer has a largest thickness of 100 nm.

### Claim 9 (depends on 1)

The filtering film structure of claim 1, wherein the inner diameter of the holes is between 10 nm and 500 nm.

### Claim 10 (depends on 1)

The filtering film structure of claim 1, wherein the inner diameter of the holes is shrunk when the voltage is applied to the conductive layer.

### Claim 11 (depends on 1)

The filtering film structure of claim 1, wherein the voltage is between 0.01V and 100V.