# US 9,040,128 B2 · Photoplating of metal electrodes for solar cells > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,040,128 B2 - Document ID: US9040128B2 - Status: Granted - Kind: B2 - Application number: 13/505,518 - Filed: 2010-11-03 - Published: 2012-11-08 - Granted: 2015-05-26 - Earliest claimed: 2009-11-03 - Assignees: NewSouth Innovations Pty Limited - Applicants: Ly Mai; Alison Maree Wenham; Stuart Ross Wenham - Inventors: Ly Mai; Alison Maree Wenham; Stuart Ross Wenham - Web page: https://patentgrep.com/patent/US9040128B2 ## CPC - H10F 77/211: {for photovoltaic cells} - C25D 5/011: {Electroplating using electromagnetic wave irradiation (using locally applied electromagnetic radiation C25D5/024)} - C25D 5/18: Electroplating using modulated, pulsed or reversing current - C25D 7/126: {for solar cells} - C25D 17/001: {Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells} - Y02E 10/50: Photovoltaic [PV] energy - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A method of photoplating a metal contact onto a surface of a cathode of a photovoltaic device is provided using light induced plating technique. The method comprises: a) immersing the photovoltaic device in a solution of metal ions, where the metal ions are a species which is to be plated onto the surface of the cathode of the photovoltaic device; and b) illuminating the photovoltaic device, using a light source of time varying intensity. This results in nett plating which is faster in a direction normal to the surface of the cathode than in a direction in a plane of the surface of the cathode. ## Claims ### Claim 1 A method of photoplating a metal contact onto an exposed semiconductor surface of a cathode of a photovoltaic device, the method comprising: a) immersing the exposed semiconductor surface of the cathode of the photovoltaic device in a solution of metal ions, the metal ions being a species which is to be plated onto the exposed semiconductor surface of the cathode of the photovoltaic device; b) illuminating the photovoltaic device, using a light source of time varying intensity, to cause plating onto the exposed semiconductor surface of the cathode of the photovoltaic device whereby nett plating is faster in a direction normal to the surface of the cathode than in a direction in a plane of the surface of the cathode. ### Claim 2 (depends on 1) The method of claim 1 wherein reversal of current direction through the solution of metal ions occurs during periods of reduced light intensity to deplete regions of the photovoltaic device where the reversed current can flow through the photovoltaic device. ### Claim 3 (depends on 2) The method of claim 2 wherein shunts are formed in the photovoltaic device in regions where deplating is desired. ### Claim 4 (depends on 3) The method of claim 3 wherein the shunts are formed by laser heating regions of the photovoltaic device to modify a dopant distribution in a column through the photovoltaic device. ### Claim 5 (depends on 4) The method of claim 4 wherein a total resistance of shunts in the photovoltaic device, determined as a parallel combination of all individual shunts in the photovoltaic device, is greater than 100 times an open circuit voltage of the photovoltaic device (Voc) divided by a short circuit current of the photovoltaic device (Isc). ### Claim 6 (depends on 1) The method as claimed in claim 1 wherein the light source of time varying intensity is a pulsed light source. ### Claim 7 (depends on 1) The method as claimed in claim 1 wherein for any given intensity of illumination falling on the photovoltaic device, resistivity of the solution of metal ions is selected to cause the photovoltaic device to operate at a point on an I-V characteristic curve of the photovoltaic device between a maximum power point voltage and an open circuit voltage. ### Claim 8 (depends on 7) The method of claim 7 wherein the resistivity of the solution of metal ions is selected to cause the photovoltaic device to operate at a point on the I-V characteristic curve of the photovoltaic device which is closer to the open circuit voltage Voc than to the maximum power point voltage. ### Claim 9 (depends on 1) The method as claimed in claim 1 further comprising: a) placing a sacrificial metal electrode in electrical contact with an anode of the photovoltaic device the sacrificial metal electrode comprising a metal of the species to be plated onto the cathode of the photovoltaic device; b) immersing the exposed semiconductor surface of the cathode of the photovoltaic device the photovoltaic device and sacrificial metal electrode in a solution of metal ions, the metal ions being of the species which is to be plated onto the cathode of the photovoltaic device; c) illuminating the photovoltaic device, to cause plating onto the exposed semiconductor surface of the cathode of the photovoltaic device, wherein metal is preferentially sacrificed from the sacrificial metal electrode, rather than from a metal contact of the anode of the photovoltaic device, to form metal ions in the solution of metal ions and ions from the solution of metal ions are reduced to plate the exposed semiconductor surface of the cathode of the photovoltaic device. ### Claim 10 (depends on 9) The method of claim 9 wherein the metal contact of the anode is formed of a metal which is more electropositive than the metal of the sacrificial metal electrode and the anode metal contact is coated with a protective coating to allow the preferential sacrifice of metal from the sacrificial metal electrode. ### Claim 11 (depends on 10) The method of claim 10 wherein the protective coating is an oxide of the metal of the anode metal contact. ### Claim 12 A method of photoplating a contact onto an exposed semiconductor surface of a cathode of a photovoltaic device, the method comprising: a) immersing the exposed semiconductor surface of the cathode of the photovoltaic device in a solution of metal ions, the metal ions being a species which is to be plated onto the cathode of the photovoltaic device; b) illuminating the photovoltaic device, to cause plating onto the exposed semiconductor surface of the cathode of the photovoltaic device, wherein for any given intensity of illumination falling on the photovoltaic device, resistivity of the solution of metal ions is selected to cause the photovoltaic device to operate at a point on an I-V characteristic curve of the photovoltaic device between a maximum power point voltage and an open circuit voltage. ### Claim 13 (depends on 12) The method of claim 12 wherein the resistivity of the solution of metal ions is selected to cause the photovoltaic device to operate at a point on the I-V characteristic curve of the photovoltaic device which is closer to the open circuit voltage Voc than to the maximum power point voltage. ### Claim 14 (depends on 13) The method as claimed in claim 13 further comprising: a) placing a sacrificial metal electrode in electrical contact with an anode of the photovoltaic device the sacrificial metal electrode comprising a metal of the species to be plated onto the cathode of the photovoltaic device; b) immersing the exposed semiconductor surface of the cathode of the photovoltaic device and sacrificial metal electrode in a solution of metal ions, the metal ions being of the species which is to be plated onto the cathode of the photovoltaic device; c) illuminating the photovoltaic device, to cause plating onto the exposed surface of the cathode of the photovoltaic device, wherein metal is preferentially sacrificed from the sacrificial metal electrode, rather than from a metal contact of the anode of the photovoltaic device, to form metal ions in the solution of metal ions and ions from the solution of metal ions are reduced to plate the exposed semiconductor surface of the cathode of the photovoltaic device. ### Claim 15 (depends on 14) The method of claim 14 wherein the metal contact of the anode is formed of a metal which is more electropositive than the metal of the sacrificial metal electrode and the anode metal contact is coated with a protective coating to allow the preferential sacrifice of metal from the sacrificial metal electrode. ### Claim 16 (depends on 15) The method of claim 15 wherein the protective coating is an oxide of the metal of the anode metal contact. ### Claim 17 A method of photoplating a contact onto an exposed semiconductor surface of a cathode of a photovoltaic device, the method comprising: a) placing a sacrificial metal electrode in electrical contact with an anode of the photovoltaic device the sacrificial metal electrode comprising a metal of the species to be plated onto the cathode of the photovoltaic device; b) immersing the exposed semiconductor surface of the cathode of the photovoltaic device and sacrificial metal electrode in a solution of metal ions, the metal ions being of the species which is to be plated onto the cathode of the photovoltaic device; c) illuminating the photovoltaic device, to cause plating onto the exposed semiconductor surface of the cathode of the photovoltaic device, wherein metal is preferentially sacrificed from the sacrificial metal electrode, rather than from a metal contact of the anode of the photovoltaic device, to form metal ions in the solution of metal ions and ions from the solution of metal ions are reduced to plate the exposed surface of the cathode of the photovoltaic device. ### Claim 18 (depends on 17) The method of claim 17 wherein the metal contact of the anode is formed of a metal which is more electropositive than the metal of the sacrificial metal electrode and the anode metal contact is coated with a protective coating to allow the preferential sacrifice of metal from the sacrificial metal electrode. ### Claim 19 (depends on 18) The method of claim 18 wherein the protective coating is an oxide of the metal of the anode metal contact. ### Claim 20 A method of photoplating a metal contact onto an exposed semiconductor surface of a cathode of a photovoltaic device, the method comprising: a) placing a sacrificial metal electrode in electrical contact with an anode of the photovoltaic device, the sacrificial metal electrode comprising a metal of a species to be plated onto the cathode of the photovoltaic device; b) immersing the exposed semiconductor surface of the cathode of the photovoltaic device and sacrificial metal electrode in a solution of metal ions, the metal ions being of the species which is to be plated onto the exposed semiconductor surface of the cathode of the photovoltaic device; c) illuminating the photovoltaic device, using a light source which has a time varying intensity, to cause plating onto the exposed surface of the cathode of the photovoltaic device, wherein metal is preferentially sacrificed from the sacrificial metal electrode, rather than from a metal contact of the anode of the photovoltaic device, to form metal ions in the solution of metal ions and ions from the solution of metal ions are reduced to plate the exposed semiconductor surface of the cathode of the photovoltaic device.