# US 9,040,127 B2 · Low temperature silicon carbide deposition process

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- Number: US 9,040,127 B2
- Document ID: US9040127B2
- Status: Granted
- Kind: B2
- Application number: 13/189,642
- Filed: 2011-07-25
- Published: 2012-07-12
- Granted: 2015-05-26
- Earliest claimed: 2010-09-24
- Assignees: Applied Materials, Inc.
- Applicants: David Thompson
- Inventors: David Thompson
- Web page: https://patentgrep.com/patent/US9040127B2

## CPC

- H10P 14/36: {characterised by treatments done before the formation of the materials}
- C23C 16/325: {Silicon carbide}
- C23C 16/4554: {Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence)}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2901: {Materials}
- H10P 14/3408: {Silicon carbide}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Methods for formation of silicon carbide on substrate are provided. Atomic layer deposition methods of forming silicon carbide are described in which a first reactant gas of the formula SinHaXb wherein n=1-5, a+b=2n+2, a>0, and X=F, Cl, Br, I; and a second reactant gas of the formula MR3-bYb, wherein R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3 are sequentially deposited on a substrate and then exposed to a plasma. The process can be repeated multiple times to deposit a plurality of silicon carbide layers.

## Claims

### Claim 1

A method for forming a silicon carbide material on a substrate surface comprising:
exposing a substrate sequentially to a first reactant gas of the formula SinHaXb wherein n=1-5, a+b=2n+2, a>0 and X=F, Cl, Br, I; and second reactant gas of the formula MR3-bYb, wherein M is an element selected from Group III or Group IIIb of the period table, R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3, to form a silicon carbide layer containing excess hydrogen on the substrate during an atomic layer deposition process;
exposing the substrate having the silicon carbide layer to a treatment process to remove at least some of the excess hydrogen; and
repeating sequentially the atomic layer deposition process and the treatment process.

### Claim 2 (depends on 1)

The method of claim 1, wherein the treatment process includes a heat treatment process, and the atomic layer deposition process and treatment process are conducted below 600° C.

### Claim 3 (depends on 1)

The method of claim 1, wherein the treatment process includes a plasma treatment process, and the atomic layer deposition process and treatment process are conducted below 600° C.

### Claim 4

A method for forming a silicon carbide material on a substrate surface, comprising:
exposing a substrate sequentially to a silicon tetrachloride reactant gas and a trimethylaluminum (TMA) reactant gas to form a silicon carbide layer on the substrate during an atomic layer deposition process;
exposing the silicon carbide layer to at least one of a heat treatment and a plasma during a treatment process; and
repeating sequentially the atomic layer deposition process and the treatment.

### Claim 5 (depends on 4)

The method of claim 4, further comprising exposing the substrate to a purge gas during a purge process.

### Claim 6 (depends on 4)

The method of claim 4, wherein the purge process is conducted after exposure of the substrate to the silicon tetrachloride reactant gas, exposure of the substrate to the TMA reactant gas, and the treatment process.

### Claim 7 (depends on 6)

The method of claim 6, wherein the purge gas is selected from an inert gas.

### Claim 8 (depends on 7)

The method of claim 7, wherein the purge gas is selected from nitrogen, argon and combinations thereof.

### Claim 9 (depends on 6)

The method of claim 6, wherein the plasma comprises one of a hydrogen plasma, a nitrogen plasma and an argon plasma.

### Claim 10 (depends on 9)

The method of claim 9, wherein the atomic layer deposition process is performed in a process chamber and the plasma is generated remotely from the process chamber.

### Claim 11 (depends on 9)

The method of claim 9, wherein a single process cycle comprises:
exposing a substrate to the silicon tetrachloride reactant gas;
a first purge process after exposing the substrate to the silicon tetrachloride reactant gas;
exposing the substrate to the TMA reactant gas to form a silicon carbide layer on the substrate;
a second purge process after exposing the substrate to the TMA reactant gas; and
the treatment process.

### Claim 12 (depends on 11)

The method of claim 11, comprising repeating the single process cycle.

### Claim 13 (depends on 4)

The method of claim 4, further comprising, prior to the atomic layer deposition process, treating the substrate to provide an active site on the substrate.

### Claim 14

A method of forming a silicon carbide material on a substrate surface, comprising:
(a) disposing a substrate within a process chamber;
(b) flowing silicon tetrachloride gas to substrate within the chamber under conditions which form a monolayer on the substrate, the monolayer comprising silicon terminated with chlorine;
(c) purging the process chamber;
(d) flowing trimethylaluminum (TMA) gas to the substrate under conditions in which methyl groups exchange with chlorine and to provide a hydrogen rich layer;
(e) purging the process chamber;
(f) exposing the substrate to at least one of a heat treatment and a plasma treatment to reduce hydrogen in the hydrogen rich layer;
(g) purging the process chamber; and
(h) repeating steps (b) through (g).

### Claim 15 (depends on 14)

The method of claim 14, wherein the plasma is formed remotely from the process chamber.

### Claim 16 (depends on 15)

The method of claim 15, wherein the plasma is hydrogen plasma or an inert gas plasma.

### Claim 17 (depends on 16)

The method of claim 16, wherein the inert gas selected from nitrogen and argon.

### Claim 18 (depends on 16)

The method of claim 16, wherein the purge gas comprises an inert gas.

### Claim 19 (depends on 14)

The method of claim 14, wherein the temperature of the process is maintained below 600° C.

### Claim 20 (depends on 14)

The method of claim 14, wherein the temperature of the process is maintained below 400° C.