# US 9,040,123 B2 · Pattern formation method

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- Number: US 9,040,123 B2
- Document ID: US9040123B2
- Status: Granted
- Kind: B2
- Application number: 13/784,644
- Filed: 2013-03-04
- Published: 2014-03-13
- Granted: 2015-05-26
- Earliest claimed: 2012-09-10
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Ayako Kawanishi; Tsukasa Azuma
- Web page: https://patentgrep.com/patent/US9040123B2

## CPC

- B05D 5/00: Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- C23C 16/00: Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes (reactive sputtering or vacuum evaporation C23C14/00)
- G03F 7/00: Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K)
- G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping}
- B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

According to the embodiments, a pattern formation method includes a process of formation of a self-assembly material layer containing at least a first segment and a second segment on a substrate having a guide layer, a process of formation of a neutralization coating on the self-assembly material layer, and a process of formation of a self-assembly pattern including a first region containing the first segment and a second region containing the second segment following phase separation of the self-assembly material layer.

## Claims

### Claim 1

A pattern formation method, comprising:
forming a guide layer on a substrate;
forming a self-assembly material layer containing at least a first segment and a second segment on the guide layer;
forming a neutralization coating on an upper surface of the self-assembly material layer by exposing the upper surface of the self-assembly material layer to a poor solvent for the self-assembly material layer; and
forming a self-assembled pattern containing a first region comprising the first segment and a second region comprising the second segment after phase separation of the self-assembly material layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the neutralization coating protects the self-assembly material from air during formation of the self-assembled pattern.

### Claim 3 (depends on 1)

The method of claim 1, wherein the self-assembly material layer is formed from a solution, and a solvent used in the formation of the solution is different than the solvent used to form the neutralization coating.

### Claim 4 (depends on 1)

The method of claim 1, wherein an upper surface of the guide layer has neutral surface for the first segment and the second segment.

### Claim 5 (depends on 4)

The method of claim 4, wherein the self-assembly material layer is formed from a solution, and a solvent used in the formation of the solution is different than the solvent used to form the neutralization coating.

### Claim 6 (depends on 1)

The method of claim 1, wherein the guide layer comprises a plurality of depressions and a plurality of projections.

### Claim 7 (depends on 1)

The method of claim 1, wherein the guide layer comprises a first pattern area and a second pattern area, wherein, in the first pattern area, interfacial tension between the guide layer and the first segment is equal to the interfacial tension between the guide layer and the second segment.

### Claim 8 (depends on 7)

The method of claim 7, wherein, an upper surface of the guide layer has neutral surface for the first segment and the second segment.

### Claim 9

A pattern formation method, comprising
forming a self-assembly material layer containing at least a first segment and a second segment on a substrate having a guide layer;
forming a neutralization coating on an upper surface of the self-assembly material layer by exposing the upper surface of the self-assembly material layer to a poor solvent for the self-assembly material layer; and
forming a pattern on the self-assembly material layer, the pattern comprising a first region including the first segment and a second region including the second segment when the self-assembly material layer is phase separated.

### Claim 10 (depends on 9)

The method of claim 9, wherein the guide layer comprises a plurality of depressions and a plurality of projections.

### Claim 11 (depends on 9)

The method of claim 9, wherein an upper surface of the guide layer has neutral surface for the first segment and the second segment.

### Claim 12 (depends on 7)

The method of claim 7, wherein in the second pattern area, interfacial tension between the guide layer and the first segment is not equal to the interfacial tension between the guide layer and the second segment.
