# US 9,039,943 B2 · Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,039,943 B2 - Document ID: US9039943B2 - Status: Granted - Kind: B2 - Application number: 13/404,399 - Filed: 2012-02-24 - Published: 2012-10-04 - Granted: 2015-05-26 - Earliest claimed: 2011-03-28 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Se Yun Kim; Eun-Sung Lee; Sang-Soo Jee; Do-Hyang Kim; Ka-Ram Lim - Inventors: Se Yun Kim; Eun-Sung Lee; Sang-Soo Jee; Do-Hyang Kim; Ka-Ram Lim - Web page: https://patentgrep.com/patent/US9039943B2 ## CPC - H01B 1/22: the conductive material comprising metals or alloys - H10F 77/211: {for photovoltaic cells} - Y02E 10/50: Photovoltaic [PV] energy - H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K}) - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract According to example embodiments, a conductive paste includes a conductive component that contains a conductive powder and a titanium (Ti)-based metallic glass. The titanium-based metallic glass has a supercooled liquid region of about 5K or more, a resistivity after crystallization that is less than a resistivity before crystallization by about 50% or more, and a weight increase by about 0.5 mg/cm2 or less after being heated in a process furnace at a firing temperature. According to example embodiments, an electronic device and a solar cell may include at least one electrode formed using the conductive paste according to example embodiments. ## Claims ### Claim 1 A conductive paste comprising: a conductive component containing a conductive powder and a titanium (Ti)-based metallic glass, the titanium-based metallic glass having a supercooled liquid region of about 5K or more, the titanium-based metallic glass having a resistivity after crystallization that is less than a resistivity before crystallization by about 50% or more, and the titanium-based metallic glass having a weight increase by about 0.5 mg/cm2 or less after being heated in process furnace at a firing temperature. ### Claim 2 (depends on 1) The conductive paste of claim 1, wherein the titanium-based metallic glass has a supercooled liquid region of about 5 to about 200K. ### Claim 3 (depends on 1) The conductive paste of claim 1, wherein the titanium-based metallic glass has resistivity after crystallization of about 200 μΩcm or less. ### Claim 4 (depends on 3) The conductive paste of claim 3, wherein the titanium-based metallic glass is crystallized by heating in a process furnace at about 300 to about 800° C. in air. ### Claim 5 (depends on 1) The conductive paste of claim 1, wherein the firing temperature is about 300 to about 1000° C. ### Claim 6 (depends on 1) The conductive paste of claim 1, wherein the titanium-based metallic glass includes one of Ti50Cu50, Ti57Cu43, Ti49.75Cu49.75Al0.5, Ti49.5Cu49.5Al1, Ti49Cu49Al2, Ti49.75Cu49.75Nb0.5, Ti49.5Cu49.5Nb1, Ti49Cu49Nb2, Ti50Cu35Ni15, Ti50Cu30Ni15Sn5, Ti50Cu25Ni15Sn5Zr5, Ti50Cu42.5Ni7.5, Ti47.5Cu42.5Ni7.5Zr2.5, Ti45Cu40Ni5Sn5Zr5, and a combination thereof. ### Claim 7 (depends on 1) The conductive paste of claim 1, wherein the conductive powder includes at least one of silver (Ag), silver (Ag) alloy, aluminum (Al), aluminum (Al) alloy, copper (Cu), copper (Cu) alloy, nickel (Ni), nickel (Ni) alloy, and a combination thereof. ### Claim 8 (depends on 1) The conductive paste of claim 1, wherein the conductive powder and titanium-based metallic glass are included in amounts of about 5 wt % to about 95 wt % and about 5 wt % to about 95 wt %, respectively, based on the total amount of the conductive component. ### Claim 9 (depends on 1) The conductive paste of claim 1, further comprising a binder. ### Claim 10 (depends on 9) The conductive paste of claim 9, wherein the binder includes one of glass frit, metallic glass, and a combination thereof. ### Claim 11 (depends on 1) The conductive paste of claim 1, wherein the titanium-based metallic glass includes a composition represented by the formula, Tix,CuyMz, wherein x is a number ranging from about 45.0 to about 60.0, y is a number ranging from about 25.0 to about 50.0, M is an element including one of aluminum (Al), and niobium (Nb), z in a number ranging from about 0.5 to about 15.0, and the sum of x, y, and z is equal to or less than 100. ### Claim 12 (depends on 11) The conductive paste of claim 11, wherein the titanium-based metallic glass is an amorphous alloy including titanium (Ti) as a main component and at least one element other than titanium, and the at least one element other than titanium includes at least one of silicon (Si), silver (Ag), gold (Au), calcium (Ca), beryllium (Be), magnesium (Mg), sodium (Na), molybdenum (Mo), tungsten (W), zinc (Zn), potassium (K), lithium (Li), iron (Fe), palladium (Pd), platinum (Pt), rubidium (Rb), chromium (Cr), and strontium (Sr). ### Claim 13 (depends on 1) An electrode comprising: a fired product of the conductive paste according to claim 1. ### Claim 14 (depends on 1) An electronic device comprising: at least one electrode including a fired product of the conductive paste of claim 1. ### Claim 15 (depends on 14) The electronic device of claim 14, wherein the titanium-based metallic glass has a supercooled liquid region of about 5 to about 200 K and resistivity after crystallization of about 200 μΩcm or less. ### Claim 16 (depends on 14) The electronic device of claim 14, wherein the titanium-based metallic glass includes one of Ti50Cu50, Ti57Cu43, Ti49.75Cu49.75Al0.5, Ti49.5Cu49.5Al1, Ti49Cu49Al2, Ti49.75Cu49.75Nb0.5, Ti49.5Cu49.5Nb1, Ti49Cu49Nb2, Ti50Cu35Ni15, Ti50Cu30Ni15Sn5, Ti50Cu25Ni15Sn5Zr5, Ti50Cu42.5Ni7.5, Ti47.5Cu42.5Ni7.5Zr2.5, Ti45Cu40Ni5Sn5Zr5, and a combination thereof. ### Claim 17 (depends on 14) The electronic device of claim 14, wherein the conductive powder and the titanium-based metallic glass are included in amounts of about 5 wt % to about 95 wt % and about 5 wt % to about 95 wt % based on the total amount of the conductive component. ### Claim 18 (depends on 1) A solar cell comprising a semiconductor layer, and at least one electrode electrically connected to the semiconductor layer, the at least one electrode including a fired product of the conductive paste according to claim 1. ### Claim 19 (depends on 18) The solar cell of claim 18, wherein the titanium-based metallic glass has a supercooled liquid region of about 5 to about 200K. ### Claim 20 (depends on 18) The solar cell of claim 18, wherein the titanium-based metallic glass has a resistivity after crystallization of about 200 μΩcm or less. ### Claim 21 (depends on 18) The solar cell of claim 18, wherein the titanium-based metallic glass includes one of Ti50Cu50, Ti57Cu43, Ti49.75Cu49.75Al0.5, Ti49.5Cu49.5Al1, Ti49Cu49Al2, Ti49.75Cu49.75Nb0.5, Ti49.5Cu49.5Nb1, Ti49Cu49Nb2, Ti50Cu35Ni15, Ti50Cu30Ni15Sn5, Ti50Cu25Ni15Sn5Zr5, Ti50Cu42.5Ni7.5, Ti47.5Cu42.5Ni7.5Zr2.5, Ti45Cu40Ni5Sn5Zr5, and a combination thereof. ### Claim 22 (depends on 18) The solar cell of claim 18, wherein the conductive powder includes one of silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), and a combination thereof. ### Claim 23 (depends on 18) The solar cell of claim 18, wherein the at least one electrode includes a buffer layer adjacent to one region of the semiconductor layer, and an electrode portion electrically connected to another region of the semiconductor layer. ### Claim 24 (depends on 23) The solar cell of claim 23, wherein the buffer layer includes one of glass frit, metallic glass, and a combination thereof.