# US 9,039,925 B2 · Polishing slurry composition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,039,925 B2 - Document ID: US9039925B2 - Status: Granted - Kind: B2 - Application number: 13/568,130 - Filed: 2012-08-07 - Published: 2013-10-10 - Granted: 2015-05-26 - Earliest claimed: 2012-04-10 - Assignees: UWIZ Technology Co., Ltd. - Applicants: Wei-Jung Chen; Wen-Tsai Tsai; Ho-Ying Wu; Song-Yuan Chang; Ming-Hui Lu - Inventors: Wei-Jung Chen; Wen-Tsai Tsai; Ho-Ying Wu; Song-Yuan Chang; Ming-Hui Lu - Web page: https://patentgrep.com/patent/US9039925B2 ## CPC - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C23F 3/04: Heavy metals - H10P 52/403: {of conductive or resistive materials} - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Provided is a polishing slurry composition, including a non-ionic surfactant represented by the following formula (1) R—(OCH2CH2)x—OH formula (1) wherein x is an integer from 1 to 50, and R is selected from a group consisting of a C3-C50 alkyl group, a C6-C55 benzylalkyl group and a C6-C55 phenylalkyl group. ## Claims ### Claim 1 A polishing slurry composition, comprising a non-ionic surfactant represented by formula (1), R—(OCH2CH2)x—OH formula (1) wherein x is an integer between 1 and 50, and R is selected from a group consisting of a C3-C50 alkyl group, a C6-C55 benzylalkyl group and a C6-C55 phenylalkyl group, and wherein the non-ionic surfactant is a secondary alcohol ethoxylate, a pH value of the polishing slurry composition is between 5 and 11, and based on a total weight of the polishing slurry composition, a content of the non-ionic surfactant is between 5 ppm and 100 ppm. ### Claim 2 (depends on 1) The polishing slurry composition of claim 1, wherein x is an integer between 7 and 40. ### Claim 3 (depends on 1) The polishing slurry composition of claim 1, wherein the non-ionic surfactant is represented by formula (2), wherein m+n is an integer between 2 and 15. ### Claim 4 (depends on 1) The polishing slurry composition of claim 1, further comprising an oxidizing agent. ### Claim 5 (depends on 4) The polishing slurry composition of claim 4, wherein the oxidizing agent is one or more selected from a group consisting of permanganate salt, peroxyacid, iodate salt, oxybromide salt, ceric salt, bromate salt, hydrogen peroxide, chlorite salt and hypochlorite salt. ### Claim 6 (depends on 4) The polishing slurry composition of claim 4, wherein based on a total weight of the polishing slurry composition, a content of the oxidizing agent is between 0.5% and 10%. ### Claim 7 (depends on 1) The polishing slurry composition of claim 1, further comprising polishing particles. ### Claim 8 (depends on 7) The polishing slurry composition of claim 7, wherein based on a total weight of the polishing slurry composition, a content of the polishing particles is between 100 ppm and 5000 ppm. ### Claim 9 (depends on 7) The polishing slurry composition of claim 7, wherein an average diameter of the polishing particles is between 5 nm and 300 nm. ### Claim 10 (depends on 7) The polishing slurry composition of claim 7, wherein an average diameter of the polishing particles is between 5 nm and 100 nm. ### Claim 11 (depends on 7) The polishing slurry composition of claim 7, wherein the polishing particles comprise one or more selected from a group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium dioxide and titanium dioxide. ### Claim 12 (depends on 1) The polishing slurry composition of claim 1, further comprising a pH adjustor. ### Claim 13 (depends on 12) The polishing slurry composition of claim 12, wherein the pH adjustor is one or more selected from a group consisting of potassium hydroxide, triethanolamine, 2,2,2-nitrilotriethanol, nitric acid, sulfuric acid, oxalic acid and citric acid. ### Claim 14 (depends on 12) The polishing slurry composition of claim 12, wherein a content of the pH adjustor is between 5 ppm and 10,000 ppm based on a total weight of the polishing slurry composition. ### Claim 15 (depends on 1) The polishing slurry composition of claim 1, further comprising a chelating agent. ### Claim 16 (depends on 15) The polishing slurry composition of claim 15, wherein the chelating agent comprises inorganic acids, organic acids or amino acids. ### Claim 17 (depends on 16) The polishing slurry composition of claim 16, wherein the chelating agent is one or more selected from a group consisting of citric acid, diethylenetriaminepentaacetate, ammonium oxlate, tartaric acid, oxalic acid, maleic acid, lactic acid, succinic acid, histidine, alanine, glycine, aspartate, glutamine, serine and arginine. ### Claim 18 (depends on 15) The polishing slurry composition of claim 15, wherein a content of the chelating agent is between 0.1% and 10% based on a total weight of the polishing slurry composition. ### Claim 19 (depends on 1) The polishing slurry composition of claim 1, further comprising an corrosion inhibitor. ### Claim 20 (depends on 19) The polishing slurry composition of claim 19, wherein said corrosion inhibitor is one or more selected from a group that consists of 1-H-benzotriazole, N-acyl sarcosinate, ammonium dodecylsulfate, tolyltriazole, 5-amino tetrazole, 3-amino-1,2,4-triazole, 4-amino-4H-1,2,4-triazole, 3-nitro-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 1H-1,2,3-triazole-ethanol, benzimidazole, imidazole, pyrrole, pyrroline, oxazole, isoxazole, indazole, indolizine, 1,2,3-triazole, 1,2,4-triazole, methylbenzotriazole, 2-mercaptobenzothiazole, benzylidene dioxotetrahydro thiazole, thenylidene dioxotetrahydro thiazole and dodecylbenzene sulfonic acid. ### Claim 21 (depends on 19) The polishing slurry composition of claim 19, wherein a content of the corrosion inhibitor is between 1 ppm and 1000 ppm based on a total weight of the polishing slurry composition. ### Claim 22 (depends on 1) The polishing slurry composition of claim 1, further comprising an aqueous carrier. ### Claim 23 (depends on 22) The polishing slurry composition of claim 22, wherein a content of the aqueous carrier is between 50% and 99% based on a total weight of the polishing slurry composition. ### Claim 24 (depends on 22) The polishing slurry composition of claim 22, wherein the aqueous carrier comprises deionized water.